D.L. Pulfrey

3.4k citations

124 papers · 2.4k indexed · h-index 28

Impact in

Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Low-power high-performance VLSI design
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 101
- Advancements in Semiconductor Devices and Circuit Design 41
- Semiconductor materials and devices 36
- Silicon and Solar Cell Technologies 15
- Radio Frequency Integrated Circuit Design 12
Atomic and Molecular Physics, and Optics 51
- Semiconductor materials and interfaces 22
- Semiconductor Quantum Structures and Devices 21

Co-authors: D.L. John Leonardo C. Castro N. G. Tarr L. Young Jason Clifford Lukas Chrostowski Behnam Faraji Mani Vaidyanathan
Journals: IEEE Transactions on Electron Devices (26 papers)Solid-State Electronics (16 papers)Journal of Applied Physics (10 papers)Applied Physics Letters (8 papers)IEEE Transactions on Nanotechnology (5 papers)
Partner nations: Canada Australia United States

In The Last Decade

D.L. Pulfrey

123 papers receiving 2.3k citations

Peers

Countries citing papers authored by D.L. Pulfrey

Since Specialization

Citations

This map shows the geographic impact of D.L. Pulfrey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.L. Pulfrey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.L. Pulfrey more than expected).

Fields of papers citing papers by D.L. Pulfrey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.L. Pulfrey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.L. Pulfrey. The network helps show where D.L. Pulfrey may publish in the future.

Co-authors

The 25 scholars most cited alongside D.L. Pulfrey, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.L. Pulfrey Line = papers co-authored together D.L. Pulfrey links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Bias-dependent amino-acid-induced conductance changes in short semi-metallic carbon nanotubes Nanotechnology ·A. Bickel, Konrad Walus, D.L. Pulfrey	2009	17
2	Examination of the high-frequency capability of carbon nanotube FETs European Solid-State Device Research Conference ·D.L. Pulfrey, Li Chen	2008	8
3	Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications? Li Chen, D.L. Pulfrey	2008	1
4	Effect of Single-Biomolecule Adsorption on the Electrical Properties of Short Carbon Nanotubes A. Bickel, Konrad Walus, Robin F. B. Turner, D.L. Pulfrey	2008	1
5	Green's function calculations for semi‐infinite carbon nanotubes physica status solidi (b) ·D.L. John, D.L. Pulfrey	2005	14
6	Extrapolatedf_maxfor carbon nanotube field-effect transistors Nanotechnology ·Leonardo C. Castro, D.L. Pulfrey	2005	22
7	A Schrödinger-Poisson Solver for Modeling Carbon Nanotube FETs TechConnect Briefs ·D.L. John, Leonardo C. Castro, Andrew Baczewski, D.L. Pulfrey	2004	28
8	Electrostatics of Partially Gated Carbon Nanotube FETs IEEE Transactions on Nanotechnology ·Jason Clifford, D.L. John, Leonardo C. Castro, D.L. Pulfrey	2004	49
9	Towards a compact model for Schottky-barrier nanotube FETs Leonardo C. Castro, D.L. John, D.L. Pulfrey	2004	6
10	Suggestions for the development of GaN-based photodiodes Solid-State Electronics ·D.L. Pulfrey, Brett Nener	1998	8
11	The influence of a transverse-effective-mass difference on the current at an abrupt heterojunction Journal of Applied Physics ·Jewel Taylor Thompson, D.L. Pulfrey	1996	5
12	An analytical expression for the current in short-base transistors Solid-State Electronics ·Liang Zhao, D.L. Pulfrey	1995	5
13	High-gain bipolar transistors with polysilicon tunnel junction emitter contacts IEEE Transactions on Electron Devices ·Nadeem Muhammad Ali, D.L. Pulfrey	1985	17
14	An analytic model for the MIS tunnel junction IEEE Transactions on Electron Devices ·N. G. Tarr, D.L. Pulfrey, Tobias Kreuziger	1983	57
15	Development of fine line silicon shadow masks for the deposition of solar cell grids pvsp ·Tobias Kreuziger, Irene Solomon, D.L. Pulfrey	1981	3
16	Induced back-surface field solar cells on p-type silicon substrates Applied Physics Letters ·N. G. Tarr, D.L. Pulfrey, P. A. Iles	1981	7
17	On the stability of MIS solar cells IEEE Electron Device Letters ·Pavankumar Biraris, D.L. Pulfrey	1980	10
18	The photovoltaic properties of thin copper oxide films Photovoltaic Specialists Conference ·V.F. Drobny, D.L. Pulfrey	1978	3
19	Analysis of silicon Schottky barrier solar cells Photovoltaic Specialists Conference ·E. Fischer, D.L. Pulfrey	1975	3
20	Ionic Current as a Function of Field in the Oxide during Plasma Anodization of Tantalum and Niobium Journal of The Electrochemical Society ·David Olave-Rojas, Erik Fouache, D.L. Pulfrey, L. Young	1970	36

About D.L. Pulfrey

D.L. Pulfrey is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Surfaces, Coatings and Films, having authored 124 papers that have together received 2.4k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (41 papers), Semiconductor materials and devices (36 papers), Carbon Nanotubes in Composites (27 papers), Semiconductor materials and interfaces (22 papers), Semiconductor Quantum Structures and Devices (21 papers), Graphene research and applications (20 papers), Silicon and Solar Cell Technologies (15 papers) and Radio Frequency Integrated Circuit Design (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.9k citations), Atomic and Molecular Physics, and Optics (877 citations), Materials Chemistry (957 citations), Condensed Matter Physics (154 citations) and Metals and Alloys (24 citations). D.L. Pulfrey has collaborated with scholars based in Canada, Australia and United States. Frequent co-authors include D.L. John, Leonardo C. Castro, N. G. Tarr, L. Young, Jason Clifford, Lukas Chrostowski, Behnam Faraji, Mani Vaidyanathan, Konrad Walus and Wei Shi. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Journal of Applied Physics, Applied Physics Letters and IEEE Transactions on Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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