Daewon Ha

2.9k total citations
86 papers, 1.7k citations indexed

About

Daewon Ha is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Daewon Ha has authored 86 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 80 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 10 papers in Biomedical Engineering. Recurrent topics in Daewon Ha's work include Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). Daewon Ha is often cited by papers focused on Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). Daewon Ha collaborates with scholars based in South Korea, United States and India. Daewon Ha's co-authors include Tsu‐Jae King, Jeffrey Bokor, Hideki Takeuchi, Yang‐Kyu Choi, Yang‐Kyu Choi, Tsu-Jae King, Chenming Hu, P. Ranade, Leland Chang and Yongsung Kim and has published in prestigious journals such as Advanced Materials, Nature Communications and Nano Letters.

In The Last Decade

Daewon Ha

76 papers receiving 1.6k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Daewon Ha 1.6k 414 184 121 82 86 1.7k
M. Toledano-Luque 1.9k 1.1× 384 0.9× 70 0.4× 204 1.7× 95 1.2× 101 2.0k
Ahmedullah Aziz 1.7k 1.1× 567 1.4× 96 0.5× 180 1.5× 94 1.1× 99 1.9k
Romain Delhougne 938 0.6× 476 1.1× 65 0.4× 86 0.7× 44 0.5× 87 1.0k
Tathagata Srimani 576 0.4× 526 1.3× 265 1.4× 104 0.9× 40 0.5× 20 927
J. Franco 3.9k 2.4× 347 0.8× 166 0.9× 249 2.1× 103 1.3× 239 4.0k
Mindy D. Bishop 587 0.4× 523 1.3× 269 1.5× 103 0.9× 43 0.5× 9 930
Uygar E. Avci 1.9k 1.1× 837 2.0× 490 2.7× 149 1.2× 58 0.7× 57 2.2k
T. Ghani 2.1k 1.3× 481 1.2× 447 2.4× 359 3.0× 110 1.3× 33 2.3k
P. Mazoyer 977 0.6× 219 0.5× 80 0.4× 458 3.8× 110 1.3× 42 1.2k
Dae-Hwan Ahn 609 0.4× 417 1.0× 72 0.4× 81 0.7× 75 0.9× 37 662

Countries citing papers authored by Daewon Ha

Since Specialization
Citations

This map shows the geographic impact of Daewon Ha's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daewon Ha with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daewon Ha more than expected).

Fields of papers citing papers by Daewon Ha

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daewon Ha. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daewon Ha. The network helps show where Daewon Ha may publish in the future.

Co-authorship network of co-authors of Daewon Ha

This figure shows the co-authorship network connecting the top 25 collaborators of Daewon Ha. A scholar is included among the top collaborators of Daewon Ha based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daewon Ha. Daewon Ha is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Taeho, S.S. Park, Wanki Kim, et al.. (2025). Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer. IEEE Transactions on Electron Devices. 72(9). 4896–4901.
2.
Ha, Daewon, et al.. (2025). Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors. IEEE Transactions on Electron Devices. 72(12). 6765–6772.
3.
Ha, Daewon, et al.. (2025). Advancements and hurdles in contact engineering for miniaturized sub-micrometer oxide semiconductor devices. Journal of Materials Chemistry C. 13(10). 4861–4875. 5 indexed citations
4.
Kim, Ju-Hyung, et al.. (2025). Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory. ACS Applied Materials & Interfaces. 17(13). 19977–19986. 1 indexed citations
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Kim, Seong Kwang, Sung-Il Park, Jaehyun Park, et al.. (2024). Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility. 1–2. 3 indexed citations
8.
Yoo, Seongwoo, Yunsung Lee, Won Jai Jung, et al.. (2024). A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel Transistors. 1–2. 4 indexed citations
9.
Das, Dipjyoti, Chinsung Park, Mengkun Tian, et al.. (2024). Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications. IEEE Electron Device Letters. 45(10). 1776–1779. 10 indexed citations
10.
Myeong, Ilho, et al.. (2024). A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ Vt Measurement Method. IEEE Electron Device Letters. 45(8). 1457–1460.
11.
Lee, Juho, et al.. (2024). Origin of High Specific Contact Resistivity in TiN-InGaZnO Junctions. IEEE Electron Device Letters. 45(9). 1665–1668. 5 indexed citations
12.
Zhao, Zijian, Suhwan Lim, Kijoon Kim, et al.. (2024). Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2. IEEE Transactions on Electron Devices. 71(8). 4655–4663. 7 indexed citations
13.
Park, Chinsung, Dipjyoti Das, Mengkun Tian, et al.. (2024). Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications. IEEE Electron Device Letters. 45(12). 2367–2370. 2 indexed citations
14.
Kim, Jangsaeng, Eun Chan Park, Ryun‐Han Koo, et al.. (2024). Analog reservoir computing via ferroelectric mixed phase boundary transistors. Nature Communications. 15(1). 9147–9147. 23 indexed citations
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Kim, Taikyu, Cheol Hee Choi, Jae Seok Hur, et al.. (2022). Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips. Advanced Materials. 35(43). e2204663–e2204663. 155 indexed citations
19.
Ha, Daewon & Hyoung-Sub Kim. (2022). Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 417–418. 18 indexed citations
20.
Chang, Leland, Yang‐Kyu Choi, Daewon Ha, et al.. (2003). Extremely scaled silicon nano-CMOS devices. Proceedings of the IEEE. 9(11). 1860–1873. 202 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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