Daewon Ha

2.9k total citations
86 papers, 1.7k citations indexed

About

Daewon Ha is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Daewon Ha has authored 86 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 80 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 10 papers in Biomedical Engineering. Recurrent topics in Daewon Ha's work include Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). Daewon Ha is often cited by papers focused on Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). Daewon Ha collaborates with scholars based in South Korea, United States and India. Daewon Ha's co-authors include Tsu‐Jae King, Jeffrey Bokor, Hideki Takeuchi, Yang‐Kyu Choi, Yang‐Kyu Choi, Tsu-Jae King, Chenming Hu, P. Ranade, Leland Chang and Yongsung Kim and has published in prestigious journals such as Advanced Materials, Nature Communications and Nano Letters.

In The Last Decade

Daewon Ha

76 papers receiving 1.6k citations

Peers

Countries citing papers authored by Daewon Ha

Since Specialization

Citations

This map shows the geographic impact of Daewon Ha's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daewon Ha with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daewon Ha more than expected).

Fields of papers citing papers by Daewon Ha

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daewon Ha. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daewon Ha. The network helps show where Daewon Ha may publish in the future.

Co-authorship network of co-authors of Daewon Ha

This figure shows the co-authorship network connecting the top 25 collaborators of Daewon Ha. A scholar is included among the top collaborators of Daewon Ha based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daewon Ha. Daewon Ha is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer 2025 ·IEEE Transactions on Electron Devices ·(unknown), Taeho Kim, (unknown), (unknown), (unknown), S.S. Park, (unknown), (unknown), Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon	0
2	Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors 2025 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), Daewon Ha, Jae Kyeong Jeong	0
3	Exploring FeFET Degradation Mechanisms: Mid-Interlayer as a Viable Solution for Stable Retention, Disturb Immunity, and Low V_th Variation 2025 ·(unknown), Sangho Lee, Hyojun Choi, (unknown), (unknown), S.S. Park, (unknown), Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon	1
4	A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel Transistors 2024 ·Seongwoo Yoo, Yunsung Lee, Won Jai Jung, Hyungtak Kim, (unknown), Minsoo Kim, Jaechun Lee, (unknown), (unknown), (unknown), Sangmin Lee, Masayuki Terai, (unknown), Chang Kyung Sung, (unknown), (unknown), Dongwoo Kim, Daewon Ha, Seung‐Eon Ahn, (unknown)	4
5	Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications 2024 ·IEEE Electron Device Letters ·(unknown), (unknown), (unknown), Dipjyoti Das, Chinsung Park, (unknown), Mengkun Tian, Hang Chen, Winston Chern, Kijoon Kim, (unknown), Suhwan Lim, (unknown), Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan	10
6	A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ V_t Measurement Method 2024 ·IEEE Electron Device Letters ·Ilho Myeong, (unknown), Wanki Kim, Daewon Ha, Su‐Jin Ahn, Jaihyuk Song	0
7	Origin of High Specific Contact Resistivity in TiN-InGaZnO Junctions 2024 ·IEEE Electron Device Letters ·Juho Lee, (unknown), Seung‐Hyun Kim, (unknown), (unknown), (unknown), Min Hee Cho, (unknown), Daewon Ha, Dae Sin Kim	5
8	Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications 2024 ·IEEE Electron Device Letters ·(unknown), Chinsung Park, (unknown), (unknown), Dipjyoti Das, (unknown), (unknown), Mengkun Tian, Hang Chen, Winston Chern, Kijoon Kim, (unknown), Suhwan Lim, (unknown), Wanki Kim, Daewon Ha, Souvik Mahapatra, Shimeng Yu, Suman Datta, Asif Islam Khan	2
9	First demonstration of SRAM transistor based on 3-dimensional stacked FET with back side interconnection structure beyond 1nm node 2024 ·Mingyu Kim, (unknown), Sung-Il Park, (unknown), Juhyun Kim, Daewon Ha, Hyungcheol Shin	2
10	Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility 2024 ·Seong Kwang Kim, (unknown), (unknown), (unknown), (unknown), Sung-Il Park, Jaehyun Park, Daewon Ha, Byung Jin Cho, Sanghyeon Kim	3
11	Analog reservoir computing via ferroelectric mixed phase boundary transistors 2024 ·Nature Communications ·Jangsaeng Kim, Eun Chan Park, (unknown), Ryun‐Han Koo, (unknown), (unknown), (unknown), Youngin Goh, (unknown), Daewon Ha, Suraj Cheema, Jae Kyeong Jeong, Daewoong Kwon	23
12	Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO₂ 2024 ·IEEE Transactions on Electron Devices ·(unknown), Zijian Zhao, Suhwan Lim, Kijoon Kim, (unknown), Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Kai Ni	7
13	Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling 2024 ·Sangho Lee, (unknown), (unknown), Yeon Sang Jung, (unknown), (unknown), Mincheol Shin, Youngin Goh, Myung Kwan Ryu, (unknown), (unknown), Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon	0
14	Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping 2024 ·(unknown), (unknown), Zijian Zhao, Kijoon Kim, Suhwan Lim, (unknown), (unknown), Wanki Kim, Daewon Ha, (unknown), Asif Islam Khan, (unknown), Jaydeep P. Kulkarni, Kai Ni	7
15	Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO₂ as a Breakthrough for Disturb-Free 3D NAND Cell: Experimental and Modeling 2024 ·(unknown), HyunJun Kang, (unknown), Hyojun Choi, Yeon Sang Jung, Mincheol Shin, Kwangsoo Kim, Suhwan Lim, (unknown), Wanki Kim, Daewon Ha, Junho Ahn, Sanghun Jeon	4
16	Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology 2024 ·V. Gaddam, Junghyeon Hwang, (unknown), (unknown), (unknown), Hyungjun Kim, (unknown), (unknown), Bumsu Park, Suhwan Lim, SangYun Kim, Kwang-Soo Kim, Sungho Lee, Daewon Ha, Jinho Ahn, Sanghun Jeon	5
17	3-STAR: A Super-steep switching, Stackable, and Strongly Reliable Transistor Array RAM for Sub-10nm DRAM and beyond 2023 ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Daewon Ha, (unknown), Jaihyuk Song	3
18	Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips 2022 ·Advanced Materials ·Taikyu Kim, Cheol Hee Choi, Jae Seok Hur, Daewon Ha, Bong Jin Kuh, Yongsung Kim, Min Hee Cho, Sang‐Wook Kim, Jae Kyeong Jeong	155
19	Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era 2022 ·2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Daewon Ha, Hyoung-Sub Kim	18
20	Extremely scaled silicon nano-CMOS devices 2003 ·Proceedings of the IEEE ·Leland Chang, Yang‐Kyu Choi, Daewon Ha, P. Ranade, Shiying Xiong, Jeffrey Bokor, Chenming Hu, Tsu-Jae King	202

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact