Youngin Goh

1.6k total citations
30 papers, 1.3k citations indexed

About

Youngin Goh is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, Youngin Goh has authored 30 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 3 papers in Hardware and Architecture. Recurrent topics in Youngin Goh's work include Ferroelectric and Negative Capacitance Devices (25 papers), Semiconductor materials and devices (20 papers) and Advanced Memory and Neural Computing (12 papers). Youngin Goh is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (25 papers), Semiconductor materials and devices (20 papers) and Advanced Memory and Neural Computing (12 papers). Youngin Goh collaborates with scholars based in South Korea, Singapore and India. Youngin Goh's co-authors include Sanghun Jeon, Junghyeon Hwang, Sanghun Jeon, Yongsun Lee, Sang‐Hee Ko Park, Sung-Hyun Cho, Minki Kim, Dipjyoti Das, Minhyun Jung and Eunah Ko and has published in prestigious journals such as Nature Communications, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Youngin Goh

29 papers receiving 1.2k citations

Peers

Countries citing papers authored by Youngin Goh

Since Specialization

Citations

This map shows the geographic impact of Youngin Goh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Youngin Goh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Youngin Goh more than expected).

Fields of papers citing papers by Youngin Goh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Youngin Goh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Youngin Goh. The network helps show where Youngin Goh may publish in the future.

Co-authorship network of co-authors of Youngin Goh

This figure shows the co-authorship network connecting the top 25 collaborators of Youngin Goh. A scholar is included among the top collaborators of Youngin Goh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Youngin Goh. Youngin Goh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films 2024 ·Applied Physics Letters ·(unknown), Gopinathan Anoop, (unknown), Youngin Goh, (unknown), Sanjith Unithrattil, (unknown), (unknown), (unknown), Su Yong Lee, Hyeon Jun Lee, Jong Bae Park, Sanghun Jeon, Ji Young Jo	3
2	Analog reservoir computing via ferroelectric mixed phase boundary transistors 2024 ·Nature Communications ·Jangsaeng Kim, Eun Chan Park, (unknown), Ryun‐Han Koo, (unknown), (unknown), (unknown), Youngin Goh, (unknown), Daewon Ha, Suraj Cheema, Jae Kyeong Jeong, Daewoong Kwon	23
3	Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling 2024 ·Sangho Lee, (unknown), (unknown), Yeon Sang Jung, (unknown), (unknown), Mincheol Shin, Youngin Goh, Myung Kwan Ryu, (unknown), (unknown), Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon	0
4	A method of controlling the imprint effect in hafnia ferroelectric device 2023 ·Applied Physics Letters ·(unknown), V. Gaddam, Youngin Goh, (unknown), (unknown), (unknown), Sanghun Jeon	17
5	Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices 2022 ·IEEE Transactions on Electron Devices ·(unknown), V. Gaddam, Youngin Goh, (unknown), (unknown), (unknown), Sanghun Jeon	16
6	A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF 2022 ·(unknown), Youngin Goh, (unknown), (unknown), Junghyeon Hwang, Minki Kim, (unknown), (unknown), Sanghun Jeon, Seong‐Ook Jung	5
7	Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing 2021 ·ACS Applied Materials & Interfaces ·(unknown), Minhyun Jung, Junghyeon Hwang, Youngin Goh, (unknown), Sanghun Jeon	49
8	Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays 2021 ·ACS Applied Materials & Interfaces ·Youngin Goh, Junghyeon Hwang, Minki Kim, Yongsun Lee, Minhyun Jung, Sanghun Jeon	58
9	High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications 2021 ·2021 IEEE International Electron Devices Meeting (IEDM) ·Youngin Goh, Junghyeon Hwang, Minki Kim, Minhyun Jung, (unknown), Seong‐Ook Jung, Sanghun Jeon	27
10	Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization 2020 ·Applied Physics Letters ·Youngin Goh, Junghyeon Hwang, Yongsun Lee, Minki Kim, Sanghun Jeon	138
11	Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices 2020 ·IEEE Transactions on Electron Devices ·Junghyeon Hwang, Youngin Goh, Sanghun Jeon	48
12	Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode 2020 ·Nanoscale ·Youngin Goh, Sung-Hyun Cho, Sang‐Hee Ko Park, Sanghun Jeon	141
13	Improved Ferroelectric Switching in Sputtered HfZrO_x Device Enabled by High Pressure Annealing 2019 ·IEEE Electron Device Letters ·Jiyong Woo, Youngin Goh, (unknown), (unknown), (unknown), Jeong Hun Kim, Jong‐Pil Im, Sung‐Min Yoon, Seung Eon Moon, Sanghun Jeon	23
14	The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO₂ 2018 ·Nanotechnology ·Youngin Goh, Sanghun Jeon	154
15	Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing 2018 ·Applied Physics Letters ·Youngin Goh, Sanghun Jeon	55
16	Efficient Suppression of Defects and Charge Trapping in High Density In–Sn–Zn–O Thin Film Transistor Prepared using Microwave-Assisted Sputter 2017 ·ACS Applied Materials & Interfaces ·Youngin Goh, (unknown), (unknown), (unknown), Sang‐Hee Ko Park, Sanghun Jeon	9
17	Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor 2017 ·IEEE Journal of the Electron Devices Society ·Eunah Ko, Hyunjae Lee, Youngin Goh, Sanghun Jeon, Changhwan Shin	60
18	Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's 2002 ·Youngin Goh, (unknown), C.H. Ling	1
19	Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFETs 1997 ·IEEE Transactions on Electron Devices ·C.H. Ling, Youngin Goh	2
20	Fowler-Nordheim stress degradation in gate oxide: results from gate-to-drain capacitance and charge pumping current 1997 ·IEEE Transactions on Electron Devices ·C.H. Ling, Youngin Goh, (unknown)	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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