V. Gaddam

1.0k total citations
41 papers, 779 citations indexed

About

V. Gaddam is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, V. Gaddam has authored 41 papers receiving a total of 779 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 28 papers in Materials Chemistry and 17 papers in Biomedical Engineering. Recurrent topics in V. Gaddam's work include Ferroelectric and Negative Capacitance Devices (18 papers), Semiconductor materials and devices (15 papers) and MXene and MAX Phase Materials (14 papers). V. Gaddam is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (18 papers), Semiconductor materials and devices (15 papers) and MXene and MAX Phase Materials (14 papers). V. Gaddam collaborates with scholars based in India, South Korea and United States. V. Gaddam's co-authors include Sanghun Jeon, Dipjyoti Das, K. Rajanna, Minhyun Jung, M. M. Nayak, R. Rakesh Kumar, Mitesh Parmar, Sanghun Jeon, Taeho Kim and Krishna Yaddanapudi and has published in prestigious journals such as Nature Communications, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

V. Gaddam

39 papers receiving 766 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Gaddam India 16 676 504 175 59 52 41 779
Jaakko Leppäniemi Finland 17 653 1.0× 318 0.6× 305 1.7× 60 1.0× 110 2.1× 36 729
Wenlong Jiang China 13 366 0.5× 285 0.6× 152 0.9× 107 1.8× 126 2.4× 60 595
Woo‐Seok Cheong South Korea 17 1.0k 1.6× 710 1.4× 196 1.1× 65 1.1× 214 4.1× 59 1.1k
Cian Gabbett Ireland 14 373 0.6× 374 0.7× 266 1.5× 114 1.9× 90 1.7× 33 705
Chun‐Cheng Cheng Taiwan 13 525 0.8× 300 0.6× 132 0.8× 28 0.5× 129 2.5× 31 602
Donglin Lu China 16 398 0.6× 481 1.0× 160 0.9× 53 0.9× 24 0.5× 37 687
Aleksander Matavž Slovenia 12 249 0.4× 198 0.4× 169 1.0× 43 0.7× 28 0.5× 30 364
Minrui Chen China 9 483 0.7× 145 0.3× 238 1.4× 56 0.9× 64 1.2× 19 638
Mícheál Burke Ireland 10 265 0.4× 149 0.3× 194 1.1× 95 1.6× 41 0.8× 16 409
Min Ju Kim South Korea 12 374 0.6× 150 0.3× 85 0.5× 52 0.9× 75 1.4× 48 454

Countries citing papers authored by V. Gaddam

Since Specialization
Citations

This map shows the geographic impact of V. Gaddam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Gaddam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Gaddam more than expected).

Fields of papers citing papers by V. Gaddam

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Gaddam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Gaddam. The network helps show where V. Gaddam may publish in the future.

Co-authorship network of co-authors of V. Gaddam

This figure shows the co-authorship network connecting the top 25 collaborators of V. Gaddam. A scholar is included among the top collaborators of V. Gaddam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Gaddam. V. Gaddam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mondal, Shubham, Jinghan Gao, Jiangnan Liu, et al.. (2025). Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing. Nature Communications. 16(1). 4130–4130. 3 indexed citations
2.
Gaddam, V., Jinghan Gao, David J. Spry, et al.. (2025). Aluminum Scandium Nitride as a Functional Material at 1000 °C. Advanced Electronic Materials. 11(6). 3 indexed citations
3.
Gaddam, V., et al.. (2024). HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process. IEEE Transactions on Electron Devices. 71(9). 5618–5623. 1 indexed citations
4.
5.
Gaddam, V., et al.. (2023). A method of controlling the imprint effect in hafnia ferroelectric device. Applied Physics Letters. 122(2). 17 indexed citations
6.
Gaddam, V., et al.. (2022). Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices. IEEE Transactions on Electron Devices. 70(1). 354–359. 16 indexed citations
7.
Jung, Minhyun, V. Gaddam, & Sanghun Jeon. (2022). A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology. Nano Convergence. 9(1). 44–44. 54 indexed citations
8.
Gaddam, V., et al.. (2021). Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors. Journal of Applied Physics. 129(24). 22 indexed citations
9.
Das, Dipjyoti, et al.. (2021). Sub 5 Å-EOT HfₓZr1–x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process. IEEE Transactions on Electron Devices. 69(1). 103–108. 34 indexed citations
10.
Das, Dipjyoti, V. Gaddam, & Sanghun Jeon. (2021). Ferroelectricity in Al₂O₃/Hf0.5Zr0.5O₂ Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature. JSTS Journal of Semiconductor Technology and Science. 21(1). 62–67. 11 indexed citations
11.
Gaddam, V., et al.. (2020). Effect of Ga composition on mobility in a-InGaZnO thin-film transistors. Nanotechnology. 32(9). 95201–95201. 2 indexed citations
12.
Gaddam, V., Dipjyoti Das, & Sanghun Jeon. (2020). Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors. IEEE Transactions on Electron Devices. 67(2). 745–750. 110 indexed citations
13.
Suma, M. N., V. Gaddam, Madhu Prasad, M. M. Nayak, & K. Rajanna. (2020). Experimental evaluation of ZnO nanowire array based dynamic pressure sensor. SN Applied Sciences. 2(10). 3 indexed citations
14.
Suma, M. N., V. Gaddam, Madhu Prasad, M. M. Nayak, & K. Rajanna. (2020). Study on the suitability of ZnO thin film for dynamic pressure sensing application. SHILAP Revista de lepidopterología. 13(1). 1–9. 2 indexed citations
15.
Nuthalapati, Suresh, et al.. (2018). Screen Printed rGO-Pd Nana-Composite films on a Flexible Substrate as Temperature Sensor. 1–4. 9 indexed citations
16.
Gaddam, V., et al.. (2018). Al:ZnO Nanosheets on Flexible Stainless Steel Substrate as Impact Sensor. Materials Today Proceedings. 5(4). 10779–10786. 2 indexed citations
17.
Gaddam, V., et al.. (2017). Graphene-Nickel composite films on flexible PCB for temperature monitoring. 173–176. 6 indexed citations
18.
Kumar, R. Rakesh, et al.. (2017). Investigation of growth parameters influence on Au-catalyzed ITO nanowires by electron beam evaporation method. Nano-Structures & Nano-Objects. 12. 166–173. 2 indexed citations
19.
Gaddam, V., R. Rakesh Kumar, Mitesh Parmar, M. M. Nayak, & K. Rajanna. (2015). Synthesis of ZnO nanorods on a flexible Phynox alloy substrate: influence of growth temperature on their properties. RSC Advances. 5(109). 89985–89992. 27 indexed citations
20.
Gaddam, V., et al.. (2012). A novel piezoelectric ZnO nanogenerator on flexible metal alloy substrate. 312. 1–4. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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