Min Hee Cho

611 total citations
15 papers, 445 citations indexed

About

Min Hee Cho is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, Min Hee Cho has authored 15 papers receiving a total of 445 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 1 paper in Hardware and Architecture. Recurrent topics in Min Hee Cho's work include Semiconductor materials and devices (13 papers), Thin-Film Transistor Technologies (11 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Min Hee Cho is often cited by papers focused on Semiconductor materials and devices (13 papers), Thin-Film Transistor Technologies (11 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Min Hee Cho collaborates with scholars based in South Korea, United States and Belgium. Min Hee Cho's co-authors include Jae Kyeong Jeong, Jae Seok Hur, Min Jae Kim, Bong Jin Kuh, Daewon Ha, Taikyu Kim, Yongsung Kim, Sang‐Wook Kim, Cheol Hee Choi and Min Hoe Cho and has published in prestigious journals such as Advanced Materials, Scientific Reports and ACS Applied Materials & Interfaces.

In The Last Decade

Min Hee Cho

14 papers receiving 438 citations

Peers

Min Hee Cho

EEE

EOMM

Zhihe Xia Hong Kong

Sanghun Jeon South Korea

I. Sak Lee South Korea

Hyeon-Kyun Noh South Korea

Mao‐Chou Tai Taiwan

Abu Bakar Siddik South Korea

Youn Goo Kim South Korea

Ken Hoshino United States

Yuqian Zhao Hong Kong

Benxuan Li United Kingdom

Zhihe Xia Hong Kong

Min Hee Cho

385 ×0.9

EEE

210 ×1.0

79 ×1.4

59 ×1.1

32 ×0.8

EOMM

Citations per year, relative to Min Hee Cho Min Hee Cho (= 1×) peers Zhihe Xia

Countries citing papers authored by Min Hee Cho

Since Specialization

Citations

This map shows the geographic impact of Min Hee Cho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Min Hee Cho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Min Hee Cho more than expected).

Fields of papers citing papers by Min Hee Cho

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Min Hee Cho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Min Hee Cho. The network helps show where Min Hee Cho may publish in the future.

Co-authorship network of co-authors of Min Hee Cho

This figure shows the co-authorship network connecting the top 25 collaborators of Min Hee Cho. A scholar is included among the top collaborators of Min Hee Cho based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Min Hee Cho. Min Hee Cho is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Choi, Cheol Hee, Taikyu Kim, Changik Im, et al.. (2025). In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In ₂ O ₃ Thin-Film Transistors. IEEE Electron Device Letters. 46(11). 2050–2053.

Lee, Juho, et al.. (2024). Origin of High Specific Contact Resistivity in TiN-InGaZnO Junctions. IEEE Electron Device Letters. 45(9). 1665–1668. 5 indexed citations

Sung, Ha‐Jun, Yu‐Jung Cha, Kwang Hee Lee, et al.. (2024). A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications. 1–2. 9 indexed citations

Zhang, Zhuocheng, Zehao Lin, Chang Niu, et al.. (2024). First Demonstration of Top-Gate Enhancement- Mode ALD In₂O₃ FETs With High Thermal Budget of 600 ^°C for DRAM Applications. IEEE Electron Device Letters. 45(10). 1851–1854. 6 indexed citations

Kim, Min Jae, Jae Seok Hur, Cheol Hee Choi, et al.. (2024). Growth of Highly‐Ordered‐Crystalline Indium‐Gallium‐Oxide Thin‐Film via Plasma‐Enhanced ALD for High Performance Top‐Gate Field‐Effect Transistors. Small Methods. 9(7). e2402070–e2402070. 3 indexed citations

Kim, Taikyu, Cheol Hee Choi, Jae Seok Hur, et al.. (2022). Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips. Advanced Materials. 35(43). e2204663–e2204663. 155 indexed citations

Kim, Donguk, Woo Sik Choi, Jun Tae Jang, et al.. (2022). Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression. Scientific Reports. 12(1). 19380–19380. 12 indexed citations

Kim, Min Jae, et al.. (2022). Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors. IEEE Transactions on Electron Devices. 69(5). 2409–2416. 59 indexed citations

Hur, Jae Seok, Min Jae Kim, Seung Hee Lee, et al.. (2022). High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach. ACS Applied Materials & Interfaces. 14(43). 48857–48867. 51 indexed citations

10.

Cho, Jae Hoon, et al.. (2022). Improvement in carrier mobility through band-gap engineering in atomic-layer-deposited In-Ga-Zn-O stacks. Journal of Alloys and Compounds. 903. 163876–163876. 28 indexed citations

11.

Kim, Min Jae, et al.. (2020). Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction. ACS Applied Materials & Interfaces. 12(30). 33887–33898. 64 indexed citations

12.

Cho, Min Hee, et al.. (2017). A novel method to characterize DRAM process variation by the analyzing stochastic properties of retention time distribution. 51. 132–133. 2 indexed citations

13.

Cho, Min Hee, et al.. (2017). An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution. IEEE Journal of the Electron Devices Society. 6. 494–499. 18 indexed citations

14.

Nam, Hyohyun, Min Hee Cho, & Changhwan Shin. (2014). Symmetric tunnel field-effect transistor (S-TFET). Current Applied Physics. 15(2). 71–77. 32 indexed citations

15.

Cho, Min Hee. (2012). Thin-Body SOI Capacitorless DRAM Cell Design Optimization and Scaling. eScholarship (California Digital Library). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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