Harry A. Schafft

1.1k total citations
47 papers, 690 citations indexed

About

Harry A. Schafft is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Harry A. Schafft has authored 47 papers receiving a total of 690 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 20 papers in Electronic, Optical and Magnetic Materials and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Harry A. Schafft's work include Copper Interconnects and Reliability (20 papers), Electronic Packaging and Soldering Technologies (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). Harry A. Schafft is often cited by papers focused on Copper Interconnects and Reliability (20 papers), Electronic Packaging and Soldering Technologies (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). Harry A. Schafft collaborates with scholars based in United States and Germany. Harry A. Schafft's co-authors include John S. Suehle, Márk Vangel, J. Mandel, J. Shott, Richard A. Allen, Mona Zaghloul, P. Mirel, David L. Blackburn, Atul Saxena and David Baglee and has published in prestigious journals such as Proceedings of the IEEE, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

Harry A. Schafft

41 papers receiving 635 citations

Peers

Harry A. Schafft
Ih-Chin Chen United States
M.S.P. Lucas United States
H. Ceric Austria
D. Harmon United States
Paolo Bagnoli Italy
A. Wallash United States
George G. Harman United States
A. Farcy France
D. S. Golubović Belgium
L.T. Su United States
Ih-Chin Chen United States
Harry A. Schafft
Citations per year, relative to Harry A. Schafft Harry A. Schafft (= 1×) peers Ih-Chin Chen

Countries citing papers authored by Harry A. Schafft

Since Specialization
Citations

This map shows the geographic impact of Harry A. Schafft's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Harry A. Schafft with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Harry A. Schafft more than expected).

Fields of papers citing papers by Harry A. Schafft

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Harry A. Schafft. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Harry A. Schafft. The network helps show where Harry A. Schafft may publish in the future.

Co-authorship network of co-authors of Harry A. Schafft

This figure shows the co-authorship network connecting the top 25 collaborators of Harry A. Schafft. A scholar is included among the top collaborators of Harry A. Schafft based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Harry A. Schafft. Harry A. Schafft is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schafft, Harry A.. (2017). Testing and Fabrication of Wire-Bond Electrical Connections: A Comprehensive Survey. Defense Technical Information Center (DTIC). 1 indexed citations
2.
Schafft, Harry A., et al.. (2005). Modeling and simulation of resistivity of nanometer scale copper. Microelectronics Reliability. 46(7). 1050–1057. 31 indexed citations
3.
Schafft, Harry A., John S. Suehle, & P. Mirel. (2003). Thermal conductivity measurements of thin-film silicon dioxide. 121–125. 21 indexed citations
4.
Linholm, L.W., Richard A. Allen, M.W. Cresswell, et al.. (2002). Measurement of patterned film linewidth for interconnect characterization. 23–26. 5 indexed citations
5.
6.
Schafft, Harry A., et al.. (2002). Building-in reliability: making it work. 32. 1–7. 6 indexed citations
7.
Schafft, Harry A., S. Mayo, Samuel N. Jones, & John S. Suehle. (2002). An electrical method for determining the thickness of metal films and the cross-sectional area of metal lines. 29. 5–11. 2 indexed citations
8.
Schafft, Harry A.. (1999). Interconnect Reliability Test Chip NIST 36: For Development of Measurement Tools & Standards. 1 indexed citations
9.
Schafft, Harry A., et al.. (1997). Toward a building-in reliability approach. Microelectronics Reliability. 37(1). 3–18. 14 indexed citations
10.
Mayo, S. & Harry A. Schafft. (1995). Electrical characterization of integrated circuit metal line thickness. Solid-State Electronics. 38(12). 1993–2000. 1 indexed citations
11.
Suehle, John S. & Harry A. Schafft. (1992). Techniques and characterization of pulsed electromigration at the wafer-level. Microelectronics Reliability. 32(11). 1527–1532. 1 indexed citations
12.
Schafft, Harry A. & John S. Suehle. (1992). The measurement, use and interpretation of the temperature coefficient of resistance of metallizations. Solid-State Electronics. 35(3). 403–410. 43 indexed citations
13.
Schafft, Harry A., et al.. (1991). Building-In Reliability: Making it Work. 1–7. 8 indexed citations
14.
Schafft, Harry A., et al.. (1985). Electromigration and the Current Density Dependence. Reliability physics. 93–99. 24 indexed citations
15.
Schafft, Harry A., et al.. (1984). Effect of Passivation and Passivation Defects on Electromigration Failure in Aluminum Metallization. Reliability physics. 250–255. 4 indexed citations
16.
Kowalski, P., W. F. Lankford, & Harry A. Schafft. (1984). Nondestructive measurement of solar cell sheet resistance using a laser scanner. IEEE Transactions on Electron Devices. 31(5). 566–570. 3 indexed citations
17.
Schafft, Harry A., et al.. (1983). VLSI Package Reliability Workshop Report. 320–323. 1 indexed citations
18.
Schafft, Harry A., et al.. (1966). Second breakdown and crystallographic defects in transistors. IEEE Transactions on Electron Devices. ED-13(11). 738–742. 2 indexed citations
19.
Schafft, Harry A., et al.. (1965). STUDIES OF SECOND BREAKDOWN IN JUNCTION DEVICES.. Defense Technical Information Center (DTIC).
20.
Schafft, Harry A., et al.. (1965). A survey of second breakdown. 46–46. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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