D. Favero

441 citations
16 papers · 206 · 1 hit paper · h-index 6

Impact in

    • GaN-based semiconductor devices and materials
    • Silicon Carbide Semiconductor Technologies
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Advanced DC-DC Converters
    • Multilevel Inverters and Converters

Papers in

D. Favero

14 papers receiving 205 citations

D. Favero's Hit Papers

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 2024 · 151 citations
1510+1Years since publication50100150

Peers

D. Favero
Comparison fields: 5 of 19
  • Condensed Matter Physics 96
  • Electrical and Electronic Engineering 163
  • Electronic, Optical and Magnetic Materials 40
  • Atomic and Molecular Physics, and Optics 24
  • Automotive Engineering 8
Replace A. Marcuzzi with:
A. Marcuzzi Italy
Rudy Wang United States
Tushar K. Talukdar United States
Arman Ur Rashid United States
Shinichiro Matsunaga Japan
Anup Bhalla United States
Frédéric Morancho France
Xiaoli Tian China
Hossein Elahipanah Sweden
Kang Peng United States
D. Favero relative to A. Marcuzzi Italy A. Marcuzzi's profile →
Citations per field
00.5×3.5×
A. Marcuzzi · 1×
Citations per year

Countries citing papers authored by D. Favero

Since Specialization
Citations

This map shows the geographic impact of D. Favero's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Favero with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Favero more than expected).

Fields of papers citing papers by D. Favero

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Favero. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Favero. The network helps show where D. Favero may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Favero, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Favero Line = papers co-authored together D. Favero links everyone, so they are left out of the graph.

All Works

16 of 16 papers shown
#Work
1
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
Hit paper breakdown →
2024151
2 20228
3 20247
4 20237
5 20217
6 20236
7 20235
8 20225
9 20233
10 20243
11 20241
12 20241
13 20251
14 20241
15 20250
16 20250

About D. Favero

D. Favero is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Infectious Diseases, having authored 16 papers that have together received 206 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Ga2O3 and related materials (1 paper), Multilevel Inverters and Converters (1 paper) and Semiconductor Quantum Structures and Devices (1 paper). The work is most often cited by research in Condensed Matter Physics (96 citations), Electrical and Electronic Engineering (163 citations), Electronic, Optical and Magnetic Materials (40 citations), Atomic and Molecular Physics, and Optics (24 citations) and Automotive Engineering (8 citations). D. Favero has collaborated with scholars based in Italy, Belgium and Netherlands. Frequent co-authors include Enrico Zanoni, Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, A. Marcuzzi, Matteo Buffolo, Stefaan Decoutere, Matteo Borga, Benoit Bakeroot and Karen Geens. Their work appears in journals such as Microelectronics Reliability, Applied Physics Express, IEEE Transactions on Electron Devices, Journal of Semiconductors and IEEE Transactions on Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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