Chih-Wei Yang

587 total citations
53 papers, 461 citations indexed

About

Chih-Wei Yang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Aerospace Engineering. According to data from OpenAlex, Chih-Wei Yang has authored 53 papers receiving a total of 461 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 21 papers in Condensed Matter Physics and 10 papers in Aerospace Engineering. Recurrent topics in Chih-Wei Yang's work include Semiconductor materials and devices (35 papers), GaN-based semiconductor devices and materials (21 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). Chih-Wei Yang is often cited by papers focused on Semiconductor materials and devices (35 papers), GaN-based semiconductor devices and materials (21 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). Chih-Wei Yang collaborates with scholars based in Taiwan, China and United States. Chih-Wei Yang's co-authors include Hsien‐Chin Chiu, Christopher Chen, Ming‐An Chung, Hsuan‐Ling Kao, Hsiang-Chun Wang, Feng-Tso Chien, Jeffrey S. Fu, S.F. Ting, Liann‐Be Chang and Ray‐Ming Lin and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Access.

In The Last Decade

Chih-Wei Yang

48 papers receiving 440 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chih-Wei Yang Taiwan 12 409 227 117 66 64 53 461
Andreas Wentzel Germany 12 503 1.2× 277 1.2× 111 0.9× 59 0.9× 34 0.5× 65 559
Étienne Okada France 10 303 0.7× 266 1.2× 142 1.2× 106 1.6× 47 0.7× 43 417
Junjie Yang China 13 271 0.7× 275 1.2× 135 1.2× 98 1.5× 110 1.7× 55 423
Nobumitsu Hirose Japan 13 350 0.9× 171 0.8× 121 1.0× 170 2.6× 103 1.6× 49 450
Yang Lu China 14 398 1.0× 415 1.8× 169 1.4× 121 1.8× 86 1.3× 65 530
H. Takahashi Japan 14 413 1.0× 195 0.9× 100 0.9× 183 2.8× 109 1.7× 55 520
Sang‐Heung Lee South Korea 10 298 0.7× 160 0.7× 94 0.8× 56 0.8× 76 1.2× 58 342
H. Alfred Hung United States 14 644 1.6× 414 1.8× 46 0.4× 110 1.7× 95 1.5× 48 683
A. Constant Spain 13 457 1.1× 321 1.4× 138 1.2× 91 1.4× 82 1.3× 44 542
Zhaoke Bian China 11 321 0.8× 319 1.4× 182 1.6× 96 1.5× 51 0.8× 16 400

Countries citing papers authored by Chih-Wei Yang

Since Specialization
Citations

This map shows the geographic impact of Chih-Wei Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chih-Wei Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chih-Wei Yang more than expected).

Fields of papers citing papers by Chih-Wei Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chih-Wei Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chih-Wei Yang. The network helps show where Chih-Wei Yang may publish in the future.

Co-authorship network of co-authors of Chih-Wei Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Chih-Wei Yang. A scholar is included among the top collaborators of Chih-Wei Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chih-Wei Yang. Chih-Wei Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chung, Ming‐An, Chia-Wei Lin, & Chih-Wei Yang. (2024). Miniaturize Dual‐Band Open‐Loop Resonator‐Based MIMO Antenna With Wide Bandwidth and High Gain. International Journal of RF and Microwave Computer-Aided Engineering. 2024(1). 1 indexed citations
2.
Chung, Ming‐An, et al.. (2024). A Frequency-Reconfigurable Antenna With Cavity-Backed Annular Architecture for Smartwatches. IEEE Access. 12. 118270–118285.
3.
Chung, Ming‐An, et al.. (2024). A 28‐GHz Vivaldi Array Antenna With Power Divider Structure for Achieving Wide Band and Gain Enhancement. International Journal of Antennas and Propagation. 2024(1). 1 indexed citations
4.
5.
Chung, Ming‐An, et al.. (2024). Wearable Reconfigurable Antennas With Multi-Mode Switching for Sub-6GHz, V-Band, and D-Band Applications. IEEE Access. 12. 115448–115464. 4 indexed citations
6.
Chung, Ming‐An, et al.. (2024). Design of High Isolation Slotted $2 \times 2$ MIMO Antenna for LTE and Sub-6G Applications. 1–2. 1 indexed citations
7.
8.
Chien, Feng-Tso, et al.. (2016). Electrical characterization of a gate-recessed AlGaN/GaN high-electron-mobility transistor with a p-GaN passivation layer. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 34(6). 2 indexed citations
9.
Hsu, Steven, Chih-Wei Yang, Chien-Ting Lin, et al.. (2016). A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device. IEEE Journal of the Electron Devices Society. 5(1). 18–22. 6 indexed citations
10.
Chiu, Hsien‐Chin, et al.. (2014). Investigation of body bias effect in P-GaN Gate HEMT devices. Asia-Pacific Microwave Conference. 1 indexed citations
11.
Chiu, Hsien‐Chin, et al.. (2013). Highly thermally stable in situ SiNX passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structure. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(5). 4 indexed citations
12.
Chiu, Hsien‐Chin, et al.. (2011). High Performance AlGaN∕GaN HEMT with Lattice Matched ZnO Gate Interlayer. Journal of The Electrochemical Society. 158(3). H294–H294. 4 indexed citations
13.
Chiu, Hsien‐Chin, et al.. (2010). GaAs Enhancement-Mode MOSHEMT with Pt/ZrO[sub 2]/Ti/Au Composited Gate Structure. Electrochemical and Solid-State Letters. 13(6). H188–H188. 2 indexed citations
14.
Chiu, Hsien‐Chin, et al.. (2010). High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology. Microelectronics Reliability. 50(6). 847–850. 5 indexed citations
15.
Chiu, Hsien‐Chin, et al.. (2009). High Thermal Stability AlGaAs/InGaAs Enhancement-Mode pHEMT Using Iridium Buried-Gate Technology. Journal of The Electrochemical Society. 156(12). H877–H877. 1 indexed citations
16.
Chiu, Hsien‐Chin, Christopher Chen, Chih-Wei Yang, et al.. (2009). Low Hysteresis Dispersion La[sub 2]O[sub 3] AlGaN∕GaN MOS-HEMTs. Journal of The Electrochemical Society. 157(2). H160–H160. 36 indexed citations
17.
Chiu, Hsien‐Chin, et al.. (2008). Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-$k$ Praseodymium Oxide Layer. IEEE Transactions on Electron Devices. 55(11). 3305–3309. 18 indexed citations
18.
Yang, Chih-Wei, et al.. (2005). Reliability studies of Hf-doped and NH3-nitrided gate dielectric for advanced CMOS application. IEE Proceedings - Circuits Devices and Systems. 152(5). 407–407.
19.
Chen, Chang‐Hsiao, Y.K. Fang, Chih-Wei Yang, et al.. (2001). Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion. IEEE Electron Device Letters. 22(8). 378–380. 18 indexed citations
20.
Chen, Chang‐Hsiao, Y.K. Fang, Chih-Wei Yang, et al.. (2001). High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies. IEEE Electron Device Letters. 22(6). 260–262. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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