Ray‐Ming Lin

3.7k total citations · 1 hit paper
115 papers, 3.1k citations indexed

About

Ray‐Ming Lin is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ray‐Ming Lin has authored 115 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 76 papers in Condensed Matter Physics, 58 papers in Electrical and Electronic Engineering and 53 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Ray‐Ming Lin's work include GaN-based semiconductor devices and materials (76 papers), Semiconductor Quantum Structures and Devices (48 papers) and Ga2O3 and related materials (47 papers). Ray‐Ming Lin is often cited by papers focused on GaN-based semiconductor devices and materials (76 papers), Semiconductor Quantum Structures and Devices (48 papers) and Ga2O3 and related materials (47 papers). Ray‐Ming Lin collaborates with scholars based in Taiwan, China and Japan. Ray‐Ming Lin's co-authors include Chieh-Hsiung Kuan, Vin‐Cent Su, Mu Ku Chen, Tao Li, Yi-Chieh Lai, Hsin Yu Kuo, Pin Chieh Wu, Din Ping Tsai, Yu Han Chen and Tzu‐Ting Huang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nature Nanotechnology.

In The Last Decade

Ray‐Ming Lin

111 papers receiving 3.0k citations

Hit Papers

A broadband achromatic metalens in the visible 2018 2026 2020 2023 2018 400 800 1.2k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. A broadband achromatic metalens in the visible
    2018 1.4k citations Shuming Wang, Pin Chieh Wu et al. Nature Nanotechnology profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ray‐Ming Lin Taiwan 22 1.7k 1.2k 1.1k 941 870 115 3.1k
A. Passaseo Italy 28 983 0.6× 1.3k 1.1× 1.5k 1.4× 360 0.4× 1.2k 1.4× 201 2.9k
Liliana Stan United States 28 967 0.6× 668 0.6× 346 0.3× 570 0.6× 676 0.8× 101 2.4k
Serkan Bütün United States 28 1.9k 1.1× 958 0.8× 771 0.7× 345 0.4× 1.5k 1.7× 52 3.1k
P. Hinze Germany 32 484 0.3× 2.3k 2.0× 791 0.7× 641 0.7× 930 1.1× 91 3.7k
Srinivasan Raghavan India 33 1.2k 0.7× 1.9k 1.5× 457 0.4× 1.3k 1.4× 786 0.9× 157 4.6k
Ü. Özgür United States 30 1.8k 1.0× 1.9k 1.6× 1.2k 1.1× 2.0k 2.1× 722 0.8× 143 4.1k
Ali K. Okyay Türkiye 31 831 0.5× 2.2k 1.9× 710 0.7× 330 0.4× 1.4k 1.6× 156 3.6k
Kevin R. Coffey United States 35 1.9k 1.1× 1.3k 1.1× 2.1k 2.0× 469 0.5× 610 0.7× 128 4.0k
Philippe Godignon Spain 28 1.3k 0.8× 5.2k 4.4× 1.6k 1.4× 840 0.9× 1.8k 2.0× 344 7.1k
Yoshihiro Sugawara Japan 26 1.5k 0.9× 987 0.8× 843 0.8× 491 0.5× 1.4k 1.6× 116 3.1k

Countries citing papers authored by Ray‐Ming Lin

Since Specialization
Citations

This map shows the geographic impact of Ray‐Ming Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ray‐Ming Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ray‐Ming Lin more than expected).

Fields of papers citing papers by Ray‐Ming Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ray‐Ming Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ray‐Ming Lin. The network helps show where Ray‐Ming Lin may publish in the future.

Co-authorship network of co-authors of Ray‐Ming Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Ray‐Ming Lin. A scholar is included among the top collaborators of Ray‐Ming Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ray‐Ming Lin. Ray‐Ming Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsai, Chia-Lung, et al.. (2023). Identification of Healthy Tissue from Malignant Tissue in Surgical Margin Using Raman Spectroscopy in Oral Cancer Surgeries. Biomedicines. 11(7). 1984–1984. 8 indexed citations
2.
Das, Munmun, et al.. (2022). Highly Sensitive and Selective Detection of Diabetic Nephropathy Markers by a Perovskite LaNiO 3−x Based Potentiometric Sensor. Journal of The Electrochemical Society. 169(3). 37507–37507. 2 indexed citations
3.
Jeng, Ming‐Jer, Cheng‐Chia Lee, Yusheng Lu, et al.. (2022). Raman Spectral Characterization of Urine for Rapid Diagnosis of Acute Kidney Injury. Journal of Clinical Medicine. 11(16). 4829–4829. 7 indexed citations
4.
Lin, Ray‐Ming, Yi-Tsung Chang, Jianbin Wu, et al.. (2021). Observation of Highly Durable Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes. Applied Sciences. 11(19). 9278–9278. 1 indexed citations
5.
Wang, Shuming, Pin Chieh Wu, Vin‐Cent Su, et al.. (2018). A broadband achromatic metalens in the visible. Nature Nanotechnology. 13(3). 227–232. 1386 indexed citations breakdown →
6.
Huang, Chia‐Yen, et al.. (2017). The origin and mitigation of volcano-like morphologies in micron-thick AlGaN/AlN heteroepitaxy. Applied Physics Letters. 111(7). 10 indexed citations
7.
Lin, Ray‐Ming, et al.. (2017). Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing. Scientific Reports. 7(1). 39717–39717. 99 indexed citations
8.
Liu, Yen-Hsing, et al.. (2017). Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length. Nanoscale Research Letters. 12(1). 420–420. 5 indexed citations
9.
Das, Atanu, et al.. (2016). Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors. Nanoscale Research Letters. 11(1). 235–235. 83 indexed citations
10.
Shiojiri, Makoto, et al.. (2015). Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs. Scientific Reports. 5(1). 13671–13671. 56 indexed citations
11.
Su, Vin‐Cent, Bo-Wen Lin, Atanu Das, et al.. (2014). Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs. Nanoscale Research Letters. 9(1). 596–596. 10 indexed citations
12.
Wu, Ming‐Hsien, et al.. (2012). Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells. International Journal of Photoenergy. 2012. 1–5. 6 indexed citations
13.
Chang, Sheng-Po, et al.. (2012). Characteristics of InGaN‐Based Light‐Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights. Journal of Nanomaterials. 2012(1). 11 indexed citations
14.
Su, Vin‐Cent, Yi‐Jane Chen, Chieh-Hsiung Kuan, et al.. (2012). High light extraction efficiency of InGaN-based light-emitting diodes using the systematic design of sub-wavelength photonic crystals. 3. 342–343. 1 indexed citations
15.
Lin, Ray‐Ming, et al.. (2012). Side Wall Wet Etching Improves the Efficiency of Gallium Nitride Light Emitting Diodes. Journal of The Electrochemical Society. 159(4). H433–H439. 2 indexed citations
16.
Chang, Liann‐Be, et al.. (2010). Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes. Applied Physics Express. 3(7). 72102–72102. 6 indexed citations
17.
Lin, Ray‐Ming, et al.. (2009). Thermal Stability for Reflectance and Specific Contact Resistance of Ni/Ag-Based Contacts on p-Type GaN. Electrochemical and Solid-State Letters. 12(9). H315–H315. 11 indexed citations
18.
Horng, Ray‐Hua, et al.. (2009). Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells. IEEE Electron Device Letters. 30(7). 724–726. 85 indexed citations
19.
Jeng, Ming‐Jer, et al.. (1999). Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer. Japanese Journal of Applied Physics. 38(12A). L1382–L1382. 8 indexed citations
20.
Chyi, Jen‐Inn, et al.. (1994). Band offsets of In 0.30 Ga 0.70 As/In 0.29 Al 0.71 Asheterojunctiongrown on GaAs substrate. Electronics Letters. 30(25). 2172–2173. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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