S.F. Ting

424 total citations
29 papers, 349 citations indexed

About

S.F. Ting is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, S.F. Ting has authored 29 papers receiving a total of 349 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in S.F. Ting's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). S.F. Ting is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). S.F. Ting collaborates with scholars based in Taiwan, China and United States. S.F. Ting's co-authors include Jyh‐Jier Ho, Yean-Kuen Fang, Shih‐Fang Chen, Y.K. Fang, Yu Fang, Chun‐Yu Lin, F. C. Ho, Chih-Wei Yang, Chang‐Hsiao Chen and S.C. Chen and has published in prestigious journals such as IEEE Transactions on Electron Devices, Materials Chemistry and Physics and IEEE Electron Device Letters.

In The Last Decade

S.F. Ting

29 papers receiving 336 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S.F. Ting Taiwan 10 279 134 66 50 45 29 349
Yoshiharu Kakehi Japan 11 172 0.6× 281 2.1× 56 0.8× 63 1.3× 47 1.0× 31 393
Y.S. No South Korea 10 289 1.0× 320 2.4× 106 1.6× 37 0.7× 25 0.6× 35 400
S.K. Bera India 10 180 0.6× 229 1.7× 48 0.7× 59 1.2× 27 0.6× 15 314
Tien Sheng Chao Taiwan 14 428 1.5× 170 1.3× 75 1.1× 26 0.5× 70 1.6× 57 496
G. Pant United States 14 417 1.5× 135 1.0× 32 0.5× 39 0.8× 43 1.0× 17 428
Dongxu Zhao China 13 250 0.9× 300 2.2× 140 2.1× 28 0.6× 49 1.1× 29 391
Shui‐Hsiang Su Taiwan 11 258 0.9× 155 1.2× 29 0.4× 113 2.3× 34 0.8× 57 340
Kwan-Yong Lim South Korea 8 251 0.9× 128 1.0× 60 0.9× 30 0.6× 53 1.2× 21 326
L. Ouellet Canada 11 219 0.8× 183 1.4× 70 1.1× 9 0.2× 38 0.8× 19 342
Yukio Yoshino Japan 10 273 1.0× 272 2.0× 74 1.1× 19 0.4× 52 1.2× 15 393

Countries citing papers authored by S.F. Ting

Since Specialization
Citations

This map shows the geographic impact of S.F. Ting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.F. Ting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.F. Ting more than expected).

Fields of papers citing papers by S.F. Ting

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.F. Ting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.F. Ting. The network helps show where S.F. Ting may publish in the future.

Co-authorship network of co-authors of S.F. Ting

This figure shows the co-authorship network connecting the top 25 collaborators of S.F. Ting. A scholar is included among the top collaborators of S.F. Ting based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.F. Ting. S.F. Ting is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ting, S.F., et al.. (2007). Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS. Materials Chemistry and Physics. 107(2-3). 471–475. 1 indexed citations
2.
Fang, Yean-Kuen, et al.. (2006). Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD. Journal of Electronic Materials. 35(10). 1837–1841. 9 indexed citations
3.
Chang, Shao‐Chi, et al.. (2005). Fabrication of very high quantum efficiency planar InGaAs PIN photodiodes through prebake process. IEE Proceedings - Circuits Devices and Systems. 152(6). 637–637. 2 indexed citations
4.
Fang, Yean-Kuen, et al.. (2004). The contact characteristics of SiCN films for opto-electrical devices applications. Journal of Electronic Materials. 33(3). 181–184. 6 indexed citations
5.
Fang, Yean-Kuen, et al.. (2003). The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications. IEEE Electron Device Letters. 24(9). 565–567. 65 indexed citations
6.
Yang, Chih-Wei, Y.K. Fang, Chang‐Hsiao Chen, et al.. (2003). Improvement of short-channel characteristics of a 0.1-/spl mu/m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment. IEEE Electron Device Letters. 24(1). 43–45. 2 indexed citations
7.
Fang, Y.K., et al.. (2003). Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter. Solid-State Electronics. 47(6). 1127–1130. 8 indexed citations
8.
Ting, S.F., et al.. (2002). Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition. Journal of Electronic Materials. 31(12). 1341–1346. 5 indexed citations
9.
Hsieh, Ming-Chun, et al.. (2002). Design and fabrication of a novel crystal SiGeC far infrared sensor with wavelength 8-14 micrometer. IEEE Sensors Journal. 2(4). 360–365. 3 indexed citations
10.
Chen, Chang‐Hsiao, Yuanxing Fang, Chih-Ping Yang, et al.. (2002). Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric. Solid-State Electronics. 46(4). 597–599. 2 indexed citations
11.
Fang, Yean-Kuen, et al.. (2002). <title>Development of a new contact-type piezoresistive micro-shear-stress sensor</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4755. 285–295. 7 indexed citations
12.
Ting, S.F., et al.. (2002). A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications. IEEE Electron Device Letters. 23(3). 142–144. 16 indexed citations
13.
Fang, Yuanxing, et al.. (2002). Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source. Solid-State Electronics. 46(11). 1949–1952. 1 indexed citations
14.
Chen, Chang‐Hsiao, Y.K. Fang, Chih-Wei Yang, et al.. (2001). Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion. IEEE Electron Device Letters. 22(8). 378–380. 18 indexed citations
15.
Chen, Chang‐Hsiao, Y.K. Fang, Chih-Wei Yang, et al.. (2001). High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies. IEEE Electron Device Letters. 22(6). 260–262. 8 indexed citations
16.
Ting, S.F., Y.K. Fang, Chang‐Hsiao Chen, et al.. (2001). The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyond. IEEE Electron Device Letters. 22(7). 327–329. 21 indexed citations
17.
Ting, S.F., et al.. (2001). He plus remote plasma nitridation of ultra-thingate oxidefor deep submicron CMOS technology applications. Electronics Letters. 37(12). 788–790. 5 indexed citations
18.
Ho, Jyh‐Jier, et al.. (2000). Development of a microelectromechanical system pressure sensor for rehabilitation engineering applications. International Journal of Electronics. 87(6). 757–767. 8 indexed citations
19.
Fang, Yu, et al.. (2000). Effects of surface porosity on tungsten trioxide(WO3) films’ electrochromic performance. Journal of Electronic Materials. 29(2). 183–187. 56 indexed citations
20.
Ho, Jyh‐Jier, et al.. (1999). The dynamic response analysis of a pyroelectric thin-film infrared sensor with thermal isolation improvement structure. IEEE Transactions on Electron Devices. 46(12). 2289–2294. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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