Osbert Cheng

650 total citations
87 papers, 497 citations indexed

About

Osbert Cheng is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Artificial Intelligence. According to data from OpenAlex, Osbert Cheng has authored 87 papers receiving a total of 497 indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 2 papers in Hardware and Architecture and 1 paper in Artificial Intelligence. Recurrent topics in Osbert Cheng's work include Semiconductor materials and devices (84 papers), Advancements in Semiconductor Devices and Circuit Design (79 papers) and Integrated Circuits and Semiconductor Failure Analysis (36 papers). Osbert Cheng is often cited by papers focused on Semiconductor materials and devices (84 papers), Advancements in Semiconductor Devices and Circuit Design (79 papers) and Integrated Circuits and Semiconductor Failure Analysis (36 papers). Osbert Cheng collaborates with scholars based in Taiwan, United States and Canada. Osbert Cheng's co-authors include Ting‐Chang Chang, Shoou‐Jinn Chang, Guangrui Xia, Ann‐Kuo Chu, Hua-Mao Chen, Steve S. Chung, E. R. Hsieh, Tseung‐Yuen Tseng, Po‐Chin Huang and Shih-Ching Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

Osbert Cheng

84 papers receiving 488 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Osbert Cheng Taiwan 12 486 51 16 14 13 87 497
Chenming Hu United States 9 344 0.7× 44 0.9× 44 2.8× 11 0.8× 21 1.6× 19 381
Ching-Sung Ho China 6 268 0.6× 33 0.6× 43 2.7× 6 0.4× 16 1.2× 7 284
Marko Simicic Belgium 9 382 0.8× 62 1.2× 16 1.0× 26 1.9× 17 1.3× 36 403
Kensuke Ota Japan 10 387 0.8× 113 2.2× 41 2.6× 6 0.4× 8 0.6× 34 403
Wangyong Chen China 9 265 0.5× 43 0.8× 29 1.8× 8 0.6× 12 0.9× 52 281
Meng Duan United Kingdom 15 430 0.9× 17 0.3× 19 1.2× 15 1.1× 19 1.5× 38 444
E. Vecchio Belgium 9 229 0.5× 58 1.1× 22 1.4× 6 0.4× 11 0.8× 16 243
S. Cimino United States 10 323 0.7× 51 1.0× 12 0.8× 6 0.4× 16 1.2× 33 332
Sourav De Germany 13 474 1.0× 90 1.8× 12 0.8× 5 0.4× 9 0.7× 59 491

Countries citing papers authored by Osbert Cheng

Since Specialization
Citations

This map shows the geographic impact of Osbert Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Osbert Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Osbert Cheng more than expected).

Fields of papers citing papers by Osbert Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Osbert Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Osbert Cheng. The network helps show where Osbert Cheng may publish in the future.

Co-authorship network of co-authors of Osbert Cheng

This figure shows the co-authorship network connecting the top 25 collaborators of Osbert Cheng. A scholar is included among the top collaborators of Osbert Cheng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Osbert Cheng. Osbert Cheng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Po‐Hsun, Ting‐Chang Chang, Wei‐Chun Hung, et al.. (2021). Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes. IEEE Electron Device Letters. 42(10). 1420–1423. 8 indexed citations
2.
3.
Chang, Ting‐Chang, et al.. (2020). Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs. IEEE Transactions on Electron Devices. 67(7). 2697–2701. 4 indexed citations
4.
Chang, Ting‐Chang, et al.. (2019). Abnormal Increment Substrate Current After Hot Carrier Stress in n-FinFET. IEEE Electron Device Letters. 41(1). 15–18. 6 indexed citations
5.
6.
Hsieh, E. R., Hung-Yu Chang, Steve S. Chung, et al.. (2019). A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 1012 Endurance. T138–T139. 1 indexed citations
7.
Chang, Ting‐Chang, et al.. (2017). The Impact of Different TiN Capping Metal Thicknesses on High-k Oxygen Vacancies in n-MOSFETs. IEEE Transactions on Device and Materials Reliability. 17(4). 799–801. 3 indexed citations
8.
Hsieh, E. R., et al.. (2017). A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak Path. IEEE Transactions on Electron Devices. 64(12). 4910–4918. 13 indexed citations
9.
Chang, Ting‐Chang, et al.. (2016). Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs. Thin Solid Films. 620. 30–33. 3 indexed citations
10.
Cheng, Osbert, et al.. (2015). A study of fin width effect on the performance of FinFET. 55. 503–504. 1 indexed citations
11.
Chang, Yee-Shyi, et al.. (2014). Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise. Japanese Journal of Applied Physics. 53(3). 38005–38005. 2 indexed citations
12.
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14.
Chang, Ting‐Chang, et al.. (2013). Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters. 103(2). 22106–22106. 5 indexed citations
15.
16.
Chang, Shoou‐Jinn, et al.. (2012). Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise. Japanese Journal of Applied Physics. 51(2S). 02BC11–02BC11. 3 indexed citations
17.
Chang, Ting‐Chang, Ann‐Kuo Chu, Shih-Ching Chen, et al.. (2010). Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain. Surface and Coatings Technology. 205(5). 1470–1474. 12 indexed citations
18.
Chang, Shoou‐Jinn, et al.. (2010). Dependence of DC Parameters on Layout and Low-Frequency Noise Behavior in Strained-Si nMOSFETs Fabricated by Stress-Memorization Technique. IEEE Electron Device Letters. 31(5). 500–502. 8 indexed citations
19.
Cheng, Osbert, et al.. (2010). Enhancement of CMOSFETs Performance by Utilizing SACVD-Based Shallow Trench Isolation for the 40-nm Node and Beyond. IEEE Transactions on Nanotechnology. 10(3). 433–438. 3 indexed citations
20.
Chang, Ting‐Chang, et al.. (2006). Temperature Effects of n-MOSFET Devices with Uniaxial Mechanical Strains. Electrochemical and Solid-State Letters. 9(8). G276–G276. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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