Zhaoke Bian

503 total citations
16 papers, 400 citations indexed

About

Zhaoke Bian is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Zhaoke Bian has authored 16 papers receiving a total of 400 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Zhaoke Bian's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (8 papers) and Semiconductor materials and interfaces (7 papers). Zhaoke Bian is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (8 papers) and Semiconductor materials and interfaces (7 papers). Zhaoke Bian collaborates with scholars based in China. Zhaoke Bian's co-authors include Jincheng Zhang, Shenglei Zhao, Hong Zhou, Kui Dang, Tao Zhang, Jing Ning, Xiaoling Duan, Yachao Zhang, Yue Hao and Yue Hao and has published in prestigious journals such as IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics and Journal of Physics D Applied Physics.

In The Last Decade

Zhaoke Bian

16 papers receiving 385 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhaoke Bian China 11 321 319 182 96 51 16 400
Erdem Arkun United States 11 284 0.9× 279 0.9× 114 0.6× 101 1.1× 77 1.5× 27 370
Hua-Quen Tserng United States 8 448 1.4× 396 1.2× 93 0.5× 119 1.2× 46 0.9× 16 501
P. Murugapandiyan India 12 284 0.9× 254 0.8× 121 0.7× 67 0.7× 84 1.6× 40 379
Andreas Wentzel Germany 12 503 1.6× 277 0.9× 111 0.6× 59 0.6× 34 0.7× 65 559
A. Nanni Italy 11 552 1.7× 453 1.4× 76 0.4× 165 1.7× 37 0.7× 41 600
Chih-Wei Yang Taiwan 12 409 1.3× 227 0.7× 117 0.6× 66 0.7× 64 1.3× 53 461
Junjie Yang China 13 271 0.8× 275 0.9× 135 0.7× 98 1.0× 110 2.2× 55 423
Sang‐Heung Lee South Korea 10 298 0.9× 160 0.5× 94 0.5× 56 0.6× 76 1.5× 58 342
A. Constant Spain 13 457 1.4× 321 1.0× 138 0.8× 91 0.9× 82 1.6× 44 542
Timothy Boles United States 10 248 0.8× 184 0.6× 66 0.4× 67 0.7× 54 1.1× 37 302

Countries citing papers authored by Zhaoke Bian

Since Specialization
Citations

This map shows the geographic impact of Zhaoke Bian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhaoke Bian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhaoke Bian more than expected).

Fields of papers citing papers by Zhaoke Bian

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhaoke Bian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhaoke Bian. The network helps show where Zhaoke Bian may publish in the future.

Co-authorship network of co-authors of Zhaoke Bian

This figure shows the co-authorship network connecting the top 25 collaborators of Zhaoke Bian. A scholar is included among the top collaborators of Zhaoke Bian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhaoke Bian. Zhaoke Bian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Zhao, Shenglei, Jincheng Zhang, Lin Du, et al.. (2023). Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress. IEEE Transactions on Electron Devices. 70(3). 959–962. 3 indexed citations
2.
Song, Xiufeng, Jincheng Zhang, Shenglei Zhao, et al.. (2022). A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics. Journal of Physics D Applied Physics. 55(26). 265103–265103. 10 indexed citations
3.
Chen, Jiabo, Xiufeng Song, Zhihong Liu, et al.. (2021). A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings. Applied Physics Express. 14(11). 116504–116504. 9 indexed citations
4.
5.
Chen, Jiabo, Zhihong Liu, Haiyong Wang, et al.. (2021). Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures. Applied Physics Express. 14(10). 104002–104002. 21 indexed citations
6.
Chen, Jiabo, Zhaoke Bian, Dan Zhu, et al.. (2020). Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN. Journal of Alloys and Compounds. 853. 156978–156978. 13 indexed citations
7.
Bian, Zhaoke, Jincheng Zhang, Shenglei Zhao, et al.. (2020). 1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination. IEEE Electron Device Letters. 41(10). 1476–1479. 26 indexed citations
8.
Chen, Jiabo, Zhaoke Bian, Zhihong Liu, et al.. (2019). High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment. Semiconductor Science and Technology. 34(11). 115019–115019. 16 indexed citations
9.
Bian, Zhaoke, Jincheng Zhang, Shenglei Zhao, et al.. (2019). Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes. Journal of Physics D Applied Physics. 53(4). 45103–45103. 9 indexed citations
10.
11.
Bian, Zhaoke, Tao Zhang, Jincheng Zhang, et al.. (2019). Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage. Applied Physics Express. 12(8). 84004–84004. 22 indexed citations
12.
Dang, Kui, Jincheng Zhang, Hong Zhou, et al.. (2019). Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. IEEE Transactions on Industrial Electronics. 67(8). 6597–6606. 41 indexed citations
13.
Dang, Kui, Jincheng Zhang, Hong Zhou, et al.. (2019). A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer. IEEE Transactions on Power Electronics. 35(3). 2247–2252. 87 indexed citations
14.
Zhang, Tao, Jinfeng Zhang, Shengrui Xu, et al.. (2019). A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique. IEEE Electron Device Letters. 40(10). 1583–1586. 52 indexed citations
15.
Bian, Zhaoke, Hong Zhou, Shengrui Xu, et al.. (2018). High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. Superlattices and Microstructures. 125. 295–301. 11 indexed citations
16.
Zhang, Tao, Jincheng Zhang, Hong Zhou, et al.. (2018). A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V. IEEE Electron Device Letters. 1–1. 45 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026