Jubong Park

2.9k total citations
62 papers, 2.5k citations indexed

About

Jubong Park is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, Jubong Park has authored 62 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 21 papers in Polymers and Plastics and 15 papers in Materials Chemistry. Recurrent topics in Jubong Park's work include Advanced Memory and Neural Computing (57 papers), Ferroelectric and Negative Capacitance Devices (38 papers) and Transition Metal Oxide Nanomaterials (20 papers). Jubong Park is often cited by papers focused on Advanced Memory and Neural Computing (57 papers), Ferroelectric and Negative Capacitance Devices (38 papers) and Transition Metal Oxide Nanomaterials (20 papers). Jubong Park collaborates with scholars based in South Korea, United States and Australia. Jubong Park's co-authors include Wootae Lee, Jungho Shin, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Sangsu Park, Hyunsang Hwang, Hyunsang Hwang, Minseok Jo and Daeseok Lee and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Jubong Park

62 papers receiving 2.5k citations

Peers

Jubong Park
C. Cagli France
Seung Ryul Lee South Korea
Jun Yeong Seok South Korea
Chang Bum Lee South Korea
Wootae Lee South Korea
Ji Hyun Hur South Korea
Seungjae Jung South Korea
Seul Ji Song South Korea
Joonmyoung Lee South Korea
Sangsu Park South Korea
C. Cagli France
Jubong Park
Citations per year, relative to Jubong Park Jubong Park (= 1×) peers C. Cagli

Countries citing papers authored by Jubong Park

Since Specialization
Citations

This map shows the geographic impact of Jubong Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jubong Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jubong Park more than expected).

Fields of papers citing papers by Jubong Park

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jubong Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jubong Park. The network helps show where Jubong Park may publish in the future.

Co-authorship network of co-authors of Jubong Park

This figure shows the co-authorship network connecting the top 25 collaborators of Jubong Park. A scholar is included among the top collaborators of Jubong Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jubong Park. Jubong Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Jaesik, et al.. (2013). A sub-GHz low-power wireless sensor node with remote power-up receiver. 46. 79–82. 8 indexed citations
2.
Kim, Seonghyun, Daeseok Lee, Jubong Park, et al.. (2012). Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices. Nanotechnology. 23(32). 325702–325702. 32 indexed citations
3.
Liu, Xinjun, Kuyyadi P. Biju, Jubong Park, et al.. (2012). Low-Power and Controllable Memory Window in Pt/Pr<SUB>0.7</SUB>Ca<SUB>0.3</SUB>MnO<SUB>3</SUB>/Yttria-Stabilized Zirconia/W Resistive Random-Access Memory Devices. Journal of Nanoscience and Nanotechnology. 12(4). 3252–3255. 2 indexed citations
4.
5.
Kim, Seonghyun, Xinjun Liu, Jubong Park, et al.. (2012). Ultrathin (&amp;lt;10nm) Nb<inf>2</inf>O<inf>5</inf>/NbO<inf>2</inf> hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications. ANU Open Research (Australian National University). 155–156. 72 indexed citations
6.
Liu, Xinjun, Sharif Sadaf, Myungwoo Son, et al.. (2011). Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications. Nanotechnology. 22(47). 475702–475702. 83 indexed citations
7.
Kim, Insung, Seungjae Jung, Minseok Jo, et al.. (2011). Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device. Nanotechnology. 22(25). 254023–254023. 229 indexed citations
8.
Kim, Seonghyun, Jubong Park, Seungjae Jung, et al.. (2011). Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations. Applied Physics Letters. 99(19). 22 indexed citations
9.
Lee, Wootae, Jubong Park, Myungwoo Son, et al.. (2011). Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications. IEEE Electron Device Letters. 32(5). 680–682. 25 indexed citations
10.
Liu, Xinjun, Sharif Sadaf, Myungwoo Son, et al.. (2011). Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications. IEEE Electron Device Letters. 33(2). 236–238. 77 indexed citations
11.
Kim, Seonghyun, Minseok Jo, Jubong Park, et al.. (2011). Forming-Free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio. Electrochemical and Solid-State Letters. 14(8). H322–H322. 7 indexed citations
12.
Lee, Wootae, Manzar Siddik, Seungjae Jung, et al.. (2011). Effect of $\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ Thermal Barrier on Reset Operations in Filament-Type Resistive Memory. IEEE Electron Device Letters. 32(11). 1573–1575. 15 indexed citations
13.
Liu, Xinjun, Kuyyadi P. Biju, Joonmyoung Lee, et al.. (2011). Parallel memristive filaments model applicable to bipolar and filamentary resistive switching. Applied Physics Letters. 99(11). 21 indexed citations
14.
Jo, Minseok, Seonghyun Kim, Jubong Park, et al.. (2010). Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-$k$ MOSFETs. IEEE Electron Device Letters. 31(4). 287–289. 2 indexed citations
15.
Park, Jubong, Minseok Jo, Joonmyoung Lee, et al.. (2010). Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect. IEEE Electron Device Letters. 32(1). 63–65. 30 indexed citations
16.
Choi, Hyejung, Heesoo Jung, Joonmyoung Lee, et al.. (2009). An electrically modifiable synapse array of resistive switching memory. Nanotechnology. 20(34). 345201–345201. 115 indexed citations
17.
Lee, Joonmyoung, El Mostafa Bourim, Jong‐Sook Lee, et al.. (2009). Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy. Current Applied Physics. 10(1). e68–e70. 7 indexed citations
18.
Kim, Tae‐Wook, Seung-Hwan Oh, Joonmyoung Lee, et al.. (2009). Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices. Organic Electronics. 11(1). 109–114. 18 indexed citations
19.
Yoon, Jaesik, Joonmyoung Lee, Hyejung Choi, et al.. (2009). Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications. Microelectronic Engineering. 86(7-9). 1929–1932. 16 indexed citations
20.
Park, Jubong, et al.. (2008). Design of a 2.4-GHz Fully Differential Zero-IF CMOS Receiver Employing a Novel Hybrid Balun for Wireless Sensor Network. JSTS Journal of Semiconductor Technology and Science. 8(2). 143–149. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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