S. Denorme

905 citations

19 papers · 164 indexed · h-index 9

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
Cellular and Molecular Neuroscience
- Neuroscience and Neural Engineering

Papers in ⓘ

Electrical and Electronic Engineering 19
- Semiconductor materials and devices 13
- Advancements in Semiconductor Devices and Circuit Design 12
- Integrated Circuits and Semiconductor Failure Analysis 6
- Ferroelectric and Negative Capacitance Devices 4
- Silicon and Solar Cell Technologies 4
- Advanced Memory and Neural Computing 3
- Thin-Film Transistor Technologies 3
- Radio Frequency Integrated Circuit Design 2
Atomic and Molecular Physics, and Optics 2

Co-authors: N. Loubet (9 shared papers)T. Skotnicki (11 shared papers)D. Dutartre (4 shared papers)C. Fenouillet-Béranger (6 shared papers)D. Mathiot (3 shared papers)C. Cagli (3 shared papers)F. Bœuf (6 shared papers)Philippe Dollfus (1 shared paper)
Journals: Solid-State Electronics (3 papers)Thin Solid Films (1 paper)IEEE Transactions on Electron Devices (1 paper)IEEE Transactions on Nanotechnology (1 paper)ECS Transactions (2 papers)
Partner nations: France Switzerland Czechia

In The Last Decade

S. Denorme

19 papers receiving 161 citations

Peers

Countries citing papers authored by S. Denorme

Since Specialization

Citations

This map shows the geographic impact of S. Denorme's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Denorme with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Denorme more than expected).

Fields of papers citing papers by S. Denorme

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Denorme. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Denorme. The network helps show where S. Denorme may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Denorme, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Denorme Line = papers co-authored together S. Denorme links everyone, so they are left out of the graph.

All Works

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19 of 19 papers shown

#	Work
1	Endurance/Retention Trade Off in HfOx and TaOx Based RRAM M. Azzaz, Elisa Vianello, B. Sklénard, P. Blaise, A. Roule, C. Sabbione, S. Bernasconi, C. Charpin, C. Cagli, E. Jalaguier, S. Jeannot, S. Denorme, P. Candelier, Minrui Yu, Lavinia Nistor, C. Fenouillet-Béranger, L. Perniola	2016	26
2	Selective etching of Si1−xGex versus Si with gaseous HCl for the formation of advanced CMOS devices Thin Solid Films ·N. Loubet, T. Kormann, G. Chabanne, S. Denorme, D. Dutartre	2008	19
3	Gate-all-around technology: Taking advantage of ballistic transport? Solid-State Electronics ·J.-L. Huguenin, G. Bidal, S. Denorme, Dominique Fleury, N. Loubet, A. Pouydebasque, P. Perreau, F. Leverd, S. Barnola, R. Beneyton, B. Orlando, P. Gouraud, T. Salvetat, L. Clement, S. Monfray, G. Ghibaudo, F. Boeuf, T. Skotnicki	2010	18
4	Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 Solid-State Electronics ·M. Azzaz, Antoine Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, Tristan Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola	2016	16
5	Thin-film devices for low power applications Solid-State Electronics ·S. Monfray, C. Fenouillet-Béranger, G. Bidal, F. Bœuf, S. Denorme, J.-L. Huguenin, Marie-Pierre Samson, N. Loubet, J. M. Hartmann, Y. Campidelli, V. Destefanis, C. Arvet, K. Benotmane, L. Clément, O. Faynot, T. Skotnicki	2009	15
6	Benefit of Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> bilayer for BEOL RRAM integration through 16kb memory cut characterization M. Azzaz, Antoine Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, Tristan Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola	2015	11
7	Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantations IEEE Transactions on Electron Devices ·S. Denorme, D. Mathiot, Philippe Dollfus, M. Mouis	1995	10
8	Silicon MOSFETs as room temperature terahertz detectors Journal of Physics Conference Series ·H. Videlier, S. Nadar, N. Dyakonova, M. Sakowicz, T Trinh Van Dam, F. Teppe, D. Coquillat, W. Knap, S. Denorme, T. Skotnicki, J M Peiris, J. Lyonnet	2009	9
9	High-Performance High-$K$/Metal Planar Self-Aligned Gate-All-Around CMOS Devices IEEE Transactions on Nanotechnology ·A. Pouydebasque, S. Denorme, N. Loubet, R. Wacquez, J. Bustos, F. Leverd, E. Deloffre, S. Barnola, D. Dutartre, P. Coronel, T. Skotnicki	2008	9
10	Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction (Keynote Paper) Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·L. Pain, M. Jurdit, J. Todeschini, S. Manakli, B. Icard, Blandine Minghetti, G. Bervin, Alessio Beverina, F. Leverd, M. Broekaart, P. Gouraud, Veronique De Jonghe, P. Brun, S. Denorme, F. Bœuf, V. Wang, Daniel Henry	2005	8
11	Silicon-On-Nothing (SON) applications for Low Power technologies S. Monfray, F. Bœuf, P. Coronel, G. Bidal, S. Denorme, T. Skotnicki	2008	7
12	Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor Microelectronics Journal ·P. Fornara, S. Denorme, E. de Berranger, D. Mathiot, M. Mouis, A. Poncet	1998	3
13	Si1-xGex/Si Selective Etch with HCl for Thin Si-Channel Transistors Integration N. Loubet, S. Denorme, A. Pouydebasque, F. Leverd, P. Gouraud, C. Tallaron, T. Skotnicki, D. Dutartre	2007	3
14	Gate-All-Around technology: taking advantage of ballistic transport ? G. Bidal, J.-L. Huguenin, S. Denorme, Dominique Fleury, N. Loubet, A. Pouydebasque, P. Perreau, F. Leverd, S. Barnola, (unknown), B. Orlando, P. Gouraud, T. Salvetat, L. Clement, (unknown), G. Ghibaudo, F. Bœuf, T. Skotnicki	2009	2
15	Optimization of Bulk⁺/SON Integration for Low Stand-by Power (LstP) Applications F. Bœuf, G. Bidal, S. Denorme, J.-L. Huguenin, S. Monfray, D. Chanemougame, N. Loubet, T. Skotnicki	2009	2
16	Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications J.-L. Huguenin, (unknown), G. Bidal, S. Denorme, P. Perreau, N. Loubet, Y. Campidelli, (unknown), C. Arvet, K. Benotmane, F. Leverd, P. Gouraud, Bertrand Le-Gratiet, C. De-Butet, L. Pinzelli, (unknown), S. Barnola, Thomas Morel, A. Halimaoui, F. Bœuf, G. Ghibaudo, T. Skotnicki	2010	2
17	Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors Microelectronics Journal ·M. Mouis, H.J. Gregory, S. Denorme, D. Mathiot, P. Ashburn, David J. Robbins, J. L. Glasper	1995	2
18	Ultra Compact FDSOI Transistors including Strain and Orientation: Processing and Performance ECS Transactions ·C. Fenouillet-Béranger, Loan Pham-Nguyen, P. Perreau, S. Denorme, F. Andrieu, Olivier Faynot, L. Tosti, L. Brévard, C. Buj, O. Weber, C. Gallon, Vincent Fiori, F. Bœuf, S. Cristoloveanu, T. Skotnicki	2009	1
19	Si/SiGe Epitaxy and Selective Etch Applications for Advanced Thin-Films MOSFET Structures ECS Transactions ·N. Loubet, F. Bœuf, S. Monfray, C. Fenouillet-Béranger, S. Denorme, G. Bidal, T. Skotnicki, D. Dutartre	2008	1

About S. Denorme

S. Denorme is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Infectious Diseases and Organic Chemistry, having authored 19 papers that have together received 164 indexed citations. Recurring topics across this work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Silicon and Solar Cell Technologies (4 papers), Advanced Memory and Neural Computing (3 papers), Thin-Film Transistor Technologies (3 papers) and Radio Frequency Integrated Circuit Design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (163 citations), Cellular and Molecular Neuroscience (18 citations), Biomedical Engineering (33 citations), Atomic and Molecular Physics, and Optics (15 citations) and Polymers and Plastics (5 citations). S. Denorme has collaborated with scholars based in France, Switzerland and Czechia. Frequent co-authors include N. Loubet, T. Skotnicki, D. Dutartre, C. Fenouillet-Béranger, D. Mathiot, C. Cagli, F. Bœuf, Philippe Dollfus, P. Candelier and S. Jeannot. Their work appears in journals such as Solid-State Electronics, Thin Solid Films, IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology and ECS Transactions.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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