S. Denorme

905 total citations
19 papers, 164 citations indexed

About

S. Denorme is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, S. Denorme has authored 19 papers receiving a total of 164 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Biomedical Engineering. Recurrent topics in S. Denorme's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). S. Denorme is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). S. Denorme collaborates with scholars based in France, Switzerland and Czechia. S. Denorme's co-authors include N. Loubet, T. Skotnicki, D. Dutartre, C. Fenouillet-Béranger, P. Candelier, D. Mathiot, L. Perniola, Elisa Vianello, F. Bœuf and F. Leverd and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and Solid-State Electronics.

In The Last Decade

S. Denorme

19 papers receiving 161 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Denorme France	9	163	33	18	15	12	19	164
Young Suh Song South Korea	10	246 1.5×	35 1.1×	7 0.4×	10 0.7×	26 2.2×	28	255
Surya Shankar Dan India	10	296 1.8×	51 1.5×	17 0.9×	36 2.4×	23 1.9×	27	304
Mark J. Milgrew United Kingdom	6	121 0.7×	118 3.6×	34 1.9×	24 1.6×	6 0.5×	7	215
Jiro Ida Japan	9	237 1.5×	28 0.8×	7 0.4×	12 0.8×	4 0.3×	69	242
G. Le Carval France	11	352 2.2×	58 1.8×	15 0.8×	34 2.3×	50 4.2×	40	372
T. Magis France	8	159 1.0×	19 0.6×	13 0.7×	24 1.6×	68 5.7×	18	171
E. Vecchio Belgium	9	229 1.4×	22 0.7×	23 1.3×	11 0.7×	58 4.8×	16	243
Thomas W. Brown United States	9	211 1.3×	83 2.5×	6 0.3×	7 0.5×	14 1.2×	24	246
Paul Stärke Germany	11	343 2.1×	33 1.0×	17 0.9×	31 2.1×	2 0.2×	36	352
E. Landgraf Germany	12	313 1.9×	72 2.2×	20 1.1×	27 1.8×	42 3.5×	28	335

Countries citing papers authored by S. Denorme

Since Specialization

Citations

This map shows the geographic impact of S. Denorme's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Denorme with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Denorme more than expected).

Fields of papers citing papers by S. Denorme

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Denorme. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Denorme. The network helps show where S. Denorme may publish in the future.

Co-authorship network of co-authors of S. Denorme

This figure shows the co-authorship network connecting the top 25 collaborators of S. Denorme. A scholar is included among the top collaborators of S. Denorme based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Denorme. S. Denorme is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Vianello, Elisa, Daniele Garbin, E. Jalaguier, et al.. (2016). Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3. Solid-State Electronics. 125. 182–188. 16 indexed citations

Vianello, Elisa, B. Sklénard, P. Blaise, et al.. (2016). Endurance/Retention Trade Off in HfOx and TaOx Based RRAM. 1–4. 26 indexed citations

Vianello, Elisa, Daniele Garbin, E. Jalaguier, et al.. (2015). Benefit of Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> bilayer for BEOL RRAM integration through 16kb memory cut characterization. 53. 266–269. 11 indexed citations

Denorme, S., Dominique Fleury, N. Loubet, et al.. (2010). Gate-all-around technology: Taking advantage of ballistic transport?. Solid-State Electronics. 54(9). 883–889. 18 indexed citations

Denorme, S., N. Loubet, Y. Campidelli, et al.. (2010). Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications. 2 indexed citations

Denorme, S., Dominique Fleury, N. Loubet, et al.. (2009). Gate-All-Around technology: taking advantage of ballistic transport ?. 7. 315–318. 2 indexed citations

Bœuf, F., S. Denorme, S. Monfray, et al.. (2009). Optimization of Bulk⁺/SON Integration for Low Stand-by Power (LstP) Applications. 2 indexed citations

Fenouillet-Béranger, C., Loan Pham-Nguyen, P. Perreau, et al.. (2009). Ultra Compact FDSOI Transistors including Strain and Orientation: Processing and Performance. ECS Transactions. 19(4). 55–64. 1 indexed citations

Monfray, S., C. Fenouillet-Béranger, F. Bœuf, et al.. (2009). Thin-film devices for low power applications. Solid-State Electronics. 54(2). 90–96. 15 indexed citations

10.

Videlier, H., N. Dyakonova, M. Sakowicz, et al.. (2009). Silicon MOSFETs as room temperature terahertz detectors. Journal of Physics Conference Series. 193. 12095–12095. 9 indexed citations

11.

Loubet, N., et al.. (2008). Selective etching of Si1−xGex versus Si with gaseous HCl for the formation of advanced CMOS devices. Thin Solid Films. 517(1). 93–97. 19 indexed citations

12.

Loubet, N., F. Bœuf, S. Monfray, et al.. (2008). Si/SiGe Epitaxy and Selective Etch Applications for Advanced Thin-Films MOSFET Structures. ECS Transactions. 16(10). 29–37. 1 indexed citations

13.

Monfray, S., et al.. (2008). Silicon-On-Nothing (SON) applications for Low Power technologies. snw 2007. 1–4. 7 indexed citations

14.

Pouydebasque, A., S. Denorme, N. Loubet, et al.. (2008). High-Performance High-$K$/Metal Planar Self-Aligned Gate-All-Around CMOS Devices. IEEE Transactions on Nanotechnology. 7(5). 551–557. 9 indexed citations

15.

Loubet, N., S. Denorme, A. Pouydebasque, et al.. (2007). Si1-xGex/Si Selective Etch with HCl for Thin Si-Channel Transistors Integration. 3 indexed citations

16.

Pain, L., F. Leverd, M. Broekaart, et al.. (2005). Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction (Keynote Paper). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5751. 35–35. 8 indexed citations

17.

Denorme, S., et al.. (1998). Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor. Microelectronics Journal. 29(3). 71–81. 3 indexed citations

18.

Denorme, S., D. Mathiot, Philippe Dollfus, & M. Mouis. (1995). Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantations. IEEE Transactions on Electron Devices. 42(3). 523–527. 10 indexed citations

19.

Mouis, M., S. Denorme, D. Mathiot, et al.. (1995). Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors. Microelectronics Journal. 26(2-3). 255–259. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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