A. R. Kovsh

1.1k total citations
45 papers, 797 citations indexed

About

A. R. Kovsh is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, A. R. Kovsh has authored 45 papers receiving a total of 797 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Atomic and Molecular Physics, and Optics, 43 papers in Electrical and Electronic Engineering and 7 papers in Materials Chemistry. Recurrent topics in A. R. Kovsh's work include Semiconductor Quantum Structures and Devices (43 papers), Semiconductor Lasers and Optical Devices (36 papers) and Photonic and Optical Devices (20 papers). A. R. Kovsh is often cited by papers focused on Semiconductor Quantum Structures and Devices (43 papers), Semiconductor Lasers and Optical Devices (36 papers) and Photonic and Optical Devices (20 papers). A. R. Kovsh collaborates with scholars based in Germany, Russia and United Kingdom. A. R. Kovsh's co-authors include D. Bimberg, V. M. Ustinov, N. N. Ledentsov, A. F. Tsatsul’nikov, M. Küntz, M. V. Maximov, Zh. I. Alfërov, G. Fiol, S. S. Mikhrin and B. V. Volovik and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Nanotechnology.

In The Last Decade

A. R. Kovsh

43 papers receiving 766 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. R. Kovsh Germany 15 752 730 164 74 52 45 797
D. Livshits Russia 15 916 1.2× 935 1.3× 92 0.6× 105 1.4× 32 0.6× 45 999
Hajime Shoji Japan 15 528 0.7× 620 0.8× 203 1.2× 31 0.4× 38 0.7× 44 719
Shin-ichiro Gozu Japan 14 648 0.9× 515 0.7× 104 0.6× 138 1.9× 85 1.6× 80 721
Nizami Vagidov United States 12 438 0.6× 384 0.5× 281 1.7× 35 0.5× 97 1.9× 53 535
T. Watanabe Japan 12 342 0.5× 295 0.4× 80 0.5× 49 0.7× 79 1.5× 49 405
B. S. Ooi United States 13 413 0.5× 424 0.6× 110 0.7× 41 0.6× 53 1.0× 44 488
S. H. Kwok United States 9 331 0.4× 232 0.3× 158 1.0× 48 0.6× 71 1.4× 22 398
M. Geiger Germany 8 416 0.6× 343 0.5× 207 1.3× 33 0.4× 38 0.7× 23 462
Hao-Tien Cheng Taiwan 12 347 0.5× 481 0.7× 69 0.4× 45 0.6× 65 1.3× 52 558
S. S. Mikhrin Russia 15 638 0.8× 775 1.1× 83 0.5× 28 0.4× 42 0.8× 55 815

Countries citing papers authored by A. R. Kovsh

Since Specialization
Citations

This map shows the geographic impact of A. R. Kovsh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. R. Kovsh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. R. Kovsh more than expected).

Fields of papers citing papers by A. R. Kovsh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. R. Kovsh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. R. Kovsh. The network helps show where A. R. Kovsh may publish in the future.

Co-authorship network of co-authors of A. R. Kovsh

This figure shows the co-authorship network connecting the top 25 collaborators of A. R. Kovsh. A scholar is included among the top collaborators of A. R. Kovsh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. R. Kovsh. A. R. Kovsh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Poltavtsev, S. V., et al.. (2024). High-Power O-band QD Booster Amplifier for Uncooled Operation. Th4B.5–Th4B.5. 1 indexed citations
2.
Bimberg, D., C. Meuer, S. Liebich, et al.. (2009). Nonlinear properties of quantum dot semiconductor opticalamplifiers at 1.3 µ m: errata. Chinese Optics Letters. 7(3). 266–266. 1 indexed citations
3.
Cataluna, Maria Ana, Paul Mandel, W. Sibbett, et al.. (2007). Temperature dependence of pulse duration in a mode-locked quantum-dot laser. Applied Physics Letters. 90(10). 17 indexed citations
4.
Chu, Yu‐De, Mark G. Thompson, Richard V. Penty, I.H. White, & A. R. Kovsh. (2007). 1.3 μm quantum-dot electro-absorption modulator. 2007 Conference on Lasers and Electro-Optics (CLEO). 278. 1–2. 5 indexed citations
5.
Bimberg, D., G. Fiol, M. Küntz, et al.. (2006). High speed nanophotonic devices based on quantum dots. physica status solidi (a). 203(14). 3523–3532. 42 indexed citations
6.
Hopfer, F., A. Mutig, M. Küntz, et al.. (2006). Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth. Applied Physics Letters. 89(14). 79 indexed citations
7.
Blokhin, S. A., N. A. Maleev, A. G. Kuzmenkov, et al.. (2006). VCSELs based on arrays of sub-monolayer InGaAs quantum dots. Semiconductors. 40(5). 615–619. 6 indexed citations
8.
Hsiao, Ru-Shang, Gray Lin, Olivier Lai, et al.. (2004). Molecular-beam-epitaxy growth of high-quality InGaAsN∕GaAs quantum well lasers emitting at 1.3μm. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(6). 2663–2667. 4 indexed citations
9.
Thompson, Mark G., C. Marinelli, K.A. Williams, et al.. (2004). Transform-limited optical pulses from 18 GHz monolithic modelocked quantum dot lasers operating at ~1.3 µm. Electronics Letters. 40(5). 346–347. 23 indexed citations
10.
Kovsh, A. R., et al.. (2002). Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 1158–1162. 38 indexed citations
11.
Maleev, N. A., A. V. Sakharov, C. E. Moeller, et al.. (2001). 1300nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots. Journal of Crystal Growth. 227-228. 1146–1150. 2 indexed citations
12.
Odnoblyudov, V. A., A. R. Kovsh, A. E. Zhukov, et al.. (2001). Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy. Semiconductors. 35(5). 533–538. 9 indexed citations
13.
Maximov, M. V., A. F. Tsatsul’nikov, D. S. Sizov, et al.. (2000). Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation. Nanotechnology. 11(4). 309–313. 2 indexed citations
14.
Grundmann, Marius, F. Heinrichsdorff, N. N. Ledentsov, et al.. (2000). Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications. Japanese Journal of Applied Physics. 39(4S). 2341–2341. 28 indexed citations
15.
Maximov, M. V., A. F. Tsatsul’nikov, B. V. Volovik, et al.. (2000). Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at ∼1.3 μm. Microelectronic Engineering. 51-52. 61–72. 12 indexed citations
16.
Maximov, M. V., A. F. Tsatsul’nikov, B. V. Volovik, et al.. (1999). Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm. Applied Physics Letters. 75(16). 2347–2349. 48 indexed citations
17.
Tsatsul’nikov, A. F., B. V. Volovik, N. N. Ledentsov, et al.. (1999). Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. Journal of Electronic Materials. 28(5). 537–541. 9 indexed citations
18.
Petrov, V. N., В. Г. Дубровский, Yu. B. Samsonenko, et al.. (1999). Heteroepitaxial growth of InAs on Si: A new type of quantum dot. Semiconductors. 33(9). 972–975. 6 indexed citations
19.
Zhukov, A. E., A. R. Kovsh, S. S. Mikhrin, et al.. (1999). Ground and excited state lasing near 1.3-/spl mu/m from self-assembled quantum dots on GaAs substrates. 74. I27–I28. 1 indexed citations
20.
Tsatsul’nikov, A. F., B. V. Volovik, N. N. Ledentsov, et al.. (1998). Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates. Semiconductors. 32(1). 84–89. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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