M. N. Charasse

1.4k total citations · 1 hit paper
23 papers, 1.1k citations indexed

About

M. N. Charasse is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. N. Charasse has authored 23 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in M. N. Charasse's work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and interfaces (6 papers) and Semiconductor materials and devices (6 papers). M. N. Charasse is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and interfaces (6 papers) and Semiconductor materials and devices (6 papers). M. N. Charasse collaborates with scholars based in France, Belgium and United States. M. N. Charasse's co-authors include J. Y. Marzin, Leon J. Goldstein, G. Le Roux, Frank Glas, B. Sermage, Pierre Galtier, G. Guillot, T. Benyattou, J.P. Hirtz and Yihe Huang and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. N. Charasse

22 papers receiving 1.0k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

1985 632 citations Leon J. Goldstein, Frank Glas et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by M. N. Charasse

Since Specialization

Citations

This map shows the geographic impact of M. N. Charasse's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. N. Charasse with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. N. Charasse more than expected).

Fields of papers citing papers by M. N. Charasse

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. N. Charasse. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. N. Charasse. The network helps show where M. N. Charasse may publish in the future.

Co-authorship network of co-authors of M. N. Charasse

This figure shows the co-authorship network connecting the top 25 collaborators of M. N. Charasse. A scholar is included among the top collaborators of M. N. Charasse based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. N. Charasse. M. N. Charasse is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Design and experimentation of an inductive r.f. plasma process for high-speed carbon coating of silica optical fibres 1994 ·Surface and Coatings Technology ·(unknown), (unknown), R. Winand, M. N. Charasse, (unknown), (unknown)	2
2	Optical studies of erbium excited states in Ga0.55Al0.45As 1992 ·Applied Physics Letters ·T. Benyattou, D. Seghier, G. Guillot, R. Moncorgé, Pierre Galtier, M. N. Charasse	20
3	X-ray photoemission diffraction as a novel technique for antiphase domain detection in the epitaxial growth of polar compounds on nonpolar substrates 1992 ·Applied Physics Letters ·J. Olivier, B. Bartenlian, M. N. Charasse, R. Bisaro, F. Wyczisk, J. Chazelas, J.P. Hirtz	1
4	Dynamic pressure sensing with a side-hole birefringent optical fiber 1991 ·Optics Letters ·M. N. Charasse, (unknown), (unknown)	17
5	Time-resolved photoluminescence spectroscopy from erbium-doped Ga0.55Al0.45As 1991 ·Applied Physics Letters ·T. Benyattou, D. Seghier, G. Guillot, R. Moncorgé, Pierre Galtier, M. N. Charasse	28
6	INTERFACIAL DEFECTS IN GaAs/Si AFTER ANNEALING 1990 ·Le Journal de Physique Colloques ·A. Rocher, M. N. Charasse, B. Bartenlian, J. Chazelas	2
7	Detailed structural analysis of GaAs grown on patterned Si 1990 ·Journal of Electronic Materials ·M. N. Charasse, B. Bartenlian, J.P. Hirtz, (unknown), J. Chazelas, (unknown)	6
8	III–V on silicon – achieving the perfect match 1990 ·Physics World ·M. N. Charasse, J.P. Hirtz	2
9	12 GHz High Power GaAs/Si MESFETs 1989 ·Japanese Journal of Applied Physics ·M. N. Charasse, B. Bartenlian, Bruno Gérard, J.P. Hirtz, M. Laviron, (unknown), (unknown), D. Delagebeaudeuf	12
10	1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy 1989 ·Applied Physics Letters ·Pierre Galtier, Jean-Paul Pocholle, M. N. Charasse, B. de Crémoux, J.P. Hirtz, (unknown), T. Benyattou, G. Guillot	37
11	Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE 1988 ·Electronics Letters ·M. N. Charasse, Pierre Galtier, A. M. Huber, C. Grattepain, J. Chazelas, J.P. Hirtz	9
12	MBE growth of GaAs on Si at Thomson 1988 ·M. N. Charasse, A. Georgakilas, E. Barbier, J. Chazelas, Jean-Paul Pocholle, J.P. Hirtz, H. Blanck, M. Laviron, J. Siejka, (unknown), A. Rocher	2
13	Line resolution in the sub-ten-nanometer range in SAM 1988 ·Ultramicroscopy ·J. Cazaux, (unknown), M. N. Charasse, J.P. Hirtz	10
14	Observation of GaAs/Si Interface by Tem: Effect of Annealing on the Structure 1987 ·MRS Proceedings ·(unknown), A. Rocher, M. N. Charasse, A. Georgakilas, J. Chazelas, J.P. Hirtz, (unknown), J. Siejka	0
15	Raman study of an epitaxial GaAs layer on a Si [100] substrate 1987 ·Applied Physics Letters ·Yihe Huang, Peter Y. Yu, M. N. Charasse, (unknown), Shyh Wang	52
16	X-ray transmission topography of GaAs/InGaAs strained layer superlattices 1986 ·Journal of Crystal Growth ·(unknown), R. Mellet, M. N. Charasse, (unknown)	3
17	X-ray diffraction studies of thermal treatment of GaAs/InGaAs strained-layer superlattices 1985 ·Journal of Applied Physics ·(unknown), M. N. Charasse, (unknown)	21
18	Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices breakdown → 1985 ·Applied Physics Letters ·Leon J. Goldstein, Frank Glas, J. Y. Marzin, M. N. Charasse, G. Le Roux	632
19	Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices 1985 ·Physical review. B, Condensed matter ·J. Y. Marzin, M. N. Charasse, B. Sermage	200
20	Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells 1985 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Leon J. Goldstein, M. N. Charasse, A. M. Jean‐Louis, (unknown), M. Allovon, J. Y. Marzin	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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