В. А. Соловьев

1.1k total citations
120 papers, 833 citations indexed

About

В. А. Соловьев is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, В. А. Соловьев has authored 120 papers receiving a total of 833 indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Electrical and Electronic Engineering, 79 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in В. А. Соловьев's work include Semiconductor Quantum Structures and Devices (74 papers), Advanced Semiconductor Detectors and Materials (54 papers) and Chalcogenide Semiconductor Thin Films (14 papers). В. А. Соловьев is often cited by papers focused on Semiconductor Quantum Structures and Devices (74 papers), Advanced Semiconductor Detectors and Materials (54 papers) and Chalcogenide Semiconductor Thin Films (14 papers). В. А. Соловьев collaborates with scholars based in Russia, United States and Germany. В. А. Соловьев's co-authors include S. V. Ivanov, B. Ya. Meltser, А. Н. Семенов, Ya. V. Terent’ev, А. А. Торопов, A. А. Ситникова, P. S. Kop’ev, O. G. Lyublinskaya, Peter J. Carrington and O. S. Komkov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

В. А. Соловьев

108 papers receiving 818 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
В. А. Соловьев Russia 16 586 573 262 86 70 120 833
Eric M. Jackson United States 20 569 1.0× 434 0.8× 205 0.8× 93 1.1× 74 1.1× 55 873
A. Piotrowska Poland 16 436 0.7× 380 0.7× 199 0.8× 62 0.7× 27 0.4× 83 661
V. I. Ivanov-Omskiĭ Russia 13 392 0.7× 335 0.6× 310 1.2× 51 0.6× 49 0.7× 118 658
Yan-Feng Lao China 15 493 0.8× 356 0.6× 250 1.0× 111 1.3× 17 0.2× 56 634
T.T. Braggins United States 12 398 0.7× 210 0.4× 177 0.7× 87 1.0× 27 0.4× 20 559
S. C. Palmateer United States 17 727 1.2× 486 0.8× 122 0.5× 146 1.7× 20 0.3× 54 911
N. Tabatabaie United States 17 606 1.0× 731 1.3× 240 0.9× 104 1.2× 47 0.7× 37 992
V. V. Chaldyshev Russia 16 469 0.8× 711 1.2× 239 0.9× 196 2.3× 16 0.2× 128 906
V. P. Kesan United States 18 889 1.5× 702 1.2× 315 1.2× 143 1.7× 21 0.3× 69 1.1k
M. Kottke United States 13 402 0.7× 498 0.9× 166 0.6× 62 0.7× 27 0.4× 37 910

Countries citing papers authored by В. А. Соловьев

Since Specialization
Citations

This map shows the geographic impact of В. А. Соловьев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. А. Соловьев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. А. Соловьев more than expected).

Fields of papers citing papers by В. А. Соловьев

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. А. Соловьев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. А. Соловьев. The network helps show where В. А. Соловьев may publish in the future.

Co-authorship network of co-authors of В. А. Соловьев

This figure shows the co-authorship network connecting the top 25 collaborators of В. А. Соловьев. A scholar is included among the top collaborators of В. А. Соловьев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. А. Соловьев. В. А. Соловьев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ivanov, S. V., et al.. (2024). Design engineering of non-linear graded InAlAs metamorphic buffer layers for efficient reduction of misfit dislocation density. Journal of Crystal Growth. 636. 127702–127702. 1 indexed citations
2.
Соловьев, В. А., et al.. (2024). Separation or Cohesion? (Dynamics of the Network Structure of Political Telegram Channels: Modeling and Empirical Analysis). The Journal of Political Theory Political Philosophy and Sociology of Politics Politeia. 114(3). 59–81.
3.
Соловьев, В. А., et al.. (2023). Reduction of misfit dislocation density in metamorphic heterostructures by design optimization of the buffer layer with non-linear graded composition profile. Физика и техника полупроводников. 57(3). 154–154. 1 indexed citations
4.
Соловьев, В. А., et al.. (2022). Fourier-transform infrared photoreflectance spectroscopy of the InSb/InAs/In(Ga,Al)As/GaAs metamorphic heterostructures with a superlattice waveguide. Journal of the Optical Society of America B. 40(2). 381–381. 1 indexed citations
5.
Komkov, O. S., et al.. (2016). Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range. Journal of Physics D Applied Physics. 49(28). 285108–285108. 19 indexed citations
6.
Соловьев, В. А., I. V. Sedova, T. V. L’vova, et al.. (2015). Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy. Applied Surface Science. 356. 378–382. 9 indexed citations
7.
Komkov, O. S., A. N. Pikhtin, А. Н. Семенов, et al.. (2011). Molecular Beam Epitaxy Growth and Optical Characterization of Al[sub x]In[sub 1-x]Sb∕GaAs Heterostructures. AIP conference proceedings. 184–187. 5 indexed citations
8.
L’vova, T. V., Ya. V. Terent’ev, А. Н. Семенов, et al.. (2010). Wet sulfur passivation of GaSb(100) surface for optoelectronic applications. Applied Surface Science. 256(18). 5644–5649. 17 indexed citations
9.
Ivanov, S. V., O. G. Lyublinskaya, Yu. B. Vasilyev, et al.. (2004). Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy. Applied Physics Letters. 84(23). 4777–4779. 15 indexed citations
10.
Соловьев, В. А., Ya. V. Terent’ev, А. А. Торопов, et al.. (2003). MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells. Journal of Crystal Growth. 251(1-4). 538–542. 2 indexed citations
11.
12.
Соловьев, В. А., А. А. Торопов, B. Ya. Meltser, et al.. (2002). GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics. Semiconductors. 36(7). 816–820. 6 indexed citations
13.
Shubina, T. V., A. А. Ситникова, В. А. Соловьев, et al.. (2000). Defect-induced island formation in CdSe/ZnSe structures. Journal of Crystal Growth. 214-215. 727–731. 6 indexed citations
14.
Bobyl, A. V., Mikhail Gaevski, S. G. Konnikov, et al.. (1996). Tc-Mapping and Investigation of Water-Initiated Modification of YBa2Cu3O7-x Thin Films by Low Temperature Scanning Electron Microscopy. Scanning microscopy. 10(3). 679–695. 3 indexed citations
15.
Ryzhov, V. A., et al.. (1995). Spectrometer for studying broad magnetic dipole transitions in magnets and the Hall conductivity at microwave frequencies in conducting materials. Technical Physics. 40(1). 71–77. 2 indexed citations
16.
Трусов, Л. И., et al.. (1995). Low temperature stress relaxation of nanocrystalline nickel. Journal of Materials Science. 30(11). 2956–2961. 9 indexed citations
17.
Gryaznov, V. G., В. А. Соловьев, & Л. И. Трусов. (1990). The peculiarities of initial stages of deformation in nanocrystalline materials (NCMs). Scripta Metallurgica et Materialia. 24(8). 1529–1534. 31 indexed citations
18.
Соловьев, В. А. & Victor A. Streltsov. (1978). On the crack nucleation in hydrostatically compressed crystals. physica status solidi (a). 49(2). K145–K148.
19.
Соловьев, В. А., et al.. (1975). High-temperature stages in the annealing of radiation-induced defects in refractory bcc-metals. 38(2). 78–81. 1 indexed citations
20.
Соловьев, В. А., et al.. (1965). The role of the volume factor on the formation of the sigma-phase. Journal of Structural Chemistry. 5(2). 288–290. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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