N. Ohtsuka

1.4k total citations
47 papers, 1.1k citations indexed

About

N. Ohtsuka is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, N. Ohtsuka has authored 47 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in N. Ohtsuka's work include Semiconductor Quantum Structures and Devices (32 papers), Semiconductor materials and devices (24 papers) and Advanced Semiconductor Detectors and Materials (13 papers). N. Ohtsuka is often cited by papers focused on Semiconductor Quantum Structures and Devices (32 papers), Semiconductor materials and devices (24 papers) and Advanced Semiconductor Detectors and Materials (13 papers). N. Ohtsuka collaborates with scholars based in Japan. N. Ohtsuka's co-authors include Kohki Mukai, Mitsuru Sugawara, M. Ozeki, K. Kodama, K. Mochizuki, Hajime Shoji, Yoshiki Sakuma, T. Uchida, Hiroshi Ishikawa and H. Shōji and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. Ohtsuka

45 papers receiving 1.0k citations

Peers

N. Ohtsuka
Yoshifumi Mori Japan
D. C. Grillo United States
P. O. Holtz Sweden
M. T. Emeny United Kingdom
Kunio Tada Japan
Kazuo Nanbu Japan
C. W. Litton United States
C. K. Peng United States
Karen Bowers United States
M. Heyen Germany
Yoshifumi Mori Japan
N. Ohtsuka
Citations per year, relative to N. Ohtsuka N. Ohtsuka (= 1×) peers Yoshifumi Mori

Countries citing papers authored by N. Ohtsuka

Since Specialization
Citations

This map shows the geographic impact of N. Ohtsuka's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Ohtsuka with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Ohtsuka more than expected).

Fields of papers citing papers by N. Ohtsuka

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Ohtsuka. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Ohtsuka. The network helps show where N. Ohtsuka may publish in the future.

Co-authorship network of co-authors of N. Ohtsuka

This figure shows the co-authorship network connecting the top 25 collaborators of N. Ohtsuka. A scholar is included among the top collaborators of N. Ohtsuka based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Ohtsuka. N. Ohtsuka is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ohtsuka, N., et al.. (2020). Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation. Japanese Journal of Applied Physics. 59(SG). SGGK16–SGGK16. 1 indexed citations
2.
Ohtsuka, N., et al.. (2010). Restraint of Copper Oxidation Using Barrier Restoration Technique with Cu–Mn Alloy. Japanese Journal of Applied Physics. 49(5S2). 05FA01–05FA01. 1 indexed citations
3.
4.
Kudo, Hiroshi, N. Ohtsuka, H. Sakai, et al.. (2007). Copper Wiring Encapsulation with Ultra-thin Barriers to Enhance Wiring and Dielectric Reliabilities for 32-nm Nodes and Beyond. 513–516. 2 indexed citations
5.
Furuya, Akira, N. Ohtsuka, N. Ohashi, Seiichi Kondo, & Shinichi Ogawa. (2005). Low-resistivity atomic-layer-deposited-TaN with atomic-layer-deposited-TaN/physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(1). 103–105. 3 indexed citations
6.
Furuya, Akira, et al.. (2005). Ta penetration into template-type porous low-k material during atomic layer deposition of TaN. Journal of Applied Physics. 98(9). 21 indexed citations
7.
8.
Mukai, Kohki, N. Ohtsuka, Hajime Shoji, & Mitsuru Sugawara. (1997). Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors. Applied Surface Science. 112. 102–109. 15 indexed citations
9.
Mukai, Kohki, N. Ohtsuka, Hajime Shoji, & Mitsuru Sugawara. (1996). Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck. Applied Physics Letters. 68(21). 3013–3015. 118 indexed citations
10.
Kitahara, Kuninori, et al.. (1995). Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth. Japanese Journal of Applied Physics. 34(1A). L17–L17. 5 indexed citations
11.
Mukai, Kohki, et al.. (1994). Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm. Japanese Journal of Applied Physics. 33(12A). L1710–L1710. 151 indexed citations
12.
Ozeki, M. & N. Ohtsuka. (1994). Atomic layer epitaxy of AlAs: Growth mechanism. Applied Surface Science. 82-83. 233–238. 11 indexed citations
13.
Kitahara, Kuninori, et al.. (1993). Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy. Japanese Journal of Applied Physics. 32(2B). L236–L236. 4 indexed citations
14.
15.
Sagehashi, Masaki, et al.. (1991). Effects of Variation of Flow and Accumulation of Suspended Solids on the Performance of Anaerobic/Aerobic Biofilm System Applied to Grey Water Treatment. Japan journal of water pollution research. 14(4). 233–242,231. 3 indexed citations
16.
Kodama, K., Masashi Ozeki, Yoshiki Sakuma, & N. Ohtsuka. (1991). Raman scattering of (GaAs)n(GaP)n short-period superlattices prepared by pulsed jet epitaxy. Journal of Applied Physics. 69(9). 6713–6715. 4 indexed citations
17.
Ozeki, Masashi, et al.. (1990). GaAs/GaP strained-layer superlattices grown by atomic layer epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(4). 741–746. 16 indexed citations
18.
Kodama, K., M. Ozeki, Yoshiki Sakuma, K. Mochizuki, & N. Ohtsuka. (1990). In situ X-ray photoemission spectroscopy for atomic layer epitaxy of InP and GaAs. Journal of Crystal Growth. 99(1-4). 535–539. 9 indexed citations
19.
Sakuma, Yoshiki, M. Ozeki, N. Ohtsuka, & K. Kodama. (1990). Comparative study of self-limiting growth of GaAs using different Ga-alkyl compounds: (CH3)3Ga, C2H5(CH3)2Ga, and (C2H5)3Ga. Journal of Applied Physics. 68(11). 5660–5664. 16 indexed citations
20.
Kitahara, Kuninori, N. Ohtsuka, & M. Ozeki. (1989). Initial stages of GaAs and AlAs growth on Si substrates: Atomic-layer epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(4). 700–703. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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