B. Ya. Meltser

1.6k total citations
76 papers, 1.3k citations indexed

About

B. Ya. Meltser is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, B. Ya. Meltser has authored 76 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Atomic and Molecular Physics, and Optics, 61 papers in Electrical and Electronic Engineering and 14 papers in Materials Chemistry. Recurrent topics in B. Ya. Meltser's work include Semiconductor Quantum Structures and Devices (70 papers), Advanced Semiconductor Detectors and Materials (49 papers) and Quantum and electron transport phenomena (18 papers). B. Ya. Meltser is often cited by papers focused on Semiconductor Quantum Structures and Devices (70 papers), Advanced Semiconductor Detectors and Materials (49 papers) and Quantum and electron transport phenomena (18 papers). B. Ya. Meltser collaborates with scholars based in Russia, Germany and Sweden. B. Ya. Meltser's co-authors include А. Н. Семенов, S. V. Ivanov, В. А. Соловьев, P. S. Kop’ev, D. Bimberg, Zh. I. Alfërov, N. N. Ledentsov, Marius Grundmann, F. Heinrichsdorff and Max Beer and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Ya. Meltser

73 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Ya. Meltser Russia 17 1.2k 987 423 152 137 76 1.3k
P. S. Kop’ev Russia 15 1.1k 0.9× 1.0k 1.0× 317 0.7× 119 0.8× 157 1.1× 63 1.3k
F. Bastiman United Kingdom 19 840 0.7× 638 0.6× 256 0.6× 205 1.3× 162 1.2× 48 953
M. T. Emeny United Kingdom 17 707 0.6× 695 0.7× 180 0.4× 173 1.1× 131 1.0× 49 936
J.H. Wolter Netherlands 16 876 0.7× 585 0.6× 229 0.5× 87 0.6× 183 1.3× 70 973
A. Y. Cho United States 20 1.1k 0.9× 935 0.9× 227 0.5× 110 0.7× 235 1.7× 54 1.3k
J. P. R. David United Kingdom 19 1.3k 1.1× 1.1k 1.2× 413 1.0× 153 1.0× 158 1.2× 54 1.5k
A. O. Kosogov Germany 17 1.5k 1.2× 1.3k 1.3× 635 1.5× 136 0.9× 132 1.0× 27 1.6k
N. Yu. Gordeev Russia 19 1.3k 1.1× 1.3k 1.3× 335 0.8× 89 0.6× 86 0.6× 133 1.5k
G. G. Tarasov Ukraine 17 907 0.7× 697 0.7× 524 1.2× 126 0.8× 75 0.5× 102 1.1k
Nobuaki Hatori Japan 27 1.6k 1.3× 2.1k 2.1× 247 0.6× 92 0.6× 58 0.4× 96 2.2k

Countries citing papers authored by B. Ya. Meltser

Since Specialization
Citations

This map shows the geographic impact of B. Ya. Meltser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Ya. Meltser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Ya. Meltser more than expected).

Fields of papers citing papers by B. Ya. Meltser

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Ya. Meltser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Ya. Meltser. The network helps show where B. Ya. Meltser may publish in the future.

Co-authorship network of co-authors of B. Ya. Meltser

This figure shows the co-authorship network connecting the top 25 collaborators of B. Ya. Meltser. A scholar is included among the top collaborators of B. Ya. Meltser based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Ya. Meltser. B. Ya. Meltser is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Komkov, O. S., B. Ya. Meltser, M. A. Yagovkina, et al.. (2017). Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells. Applied Physics Express. 10(12). 121201–121201. 12 indexed citations
2.
Komkov, O. S., A. N. Pikhtin, А. Н. Семенов, et al.. (2011). Molecular Beam Epitaxy Growth and Optical Characterization of Al[sub x]In[sub 1-x]Sb∕GaAs Heterostructures. AIP conference proceedings. 184–187. 5 indexed citations
3.
Семенов, А. Н., B. Ya. Meltser, В. А. Соловьев, et al.. (2011). Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures. Semiconductors. 45(10). 1327–1333. 11 indexed citations
4.
L’vova, T. V., Ya. V. Terent’ev, А. Н. Семенов, et al.. (2010). Wet sulfur passivation of GaSb(100) surface for optoelectronic applications. Applied Surface Science. 256(18). 5644–5649. 17 indexed citations
5.
Семенов, А. Н., Ya. V. Terent’ev, B. Ya. Meltser, et al.. (2010). Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors. Semiconductors. 44(5). 672–677. 7 indexed citations
6.
Terent’ev, Ya. V., et al.. (2010). Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures. Semiconductors. 44(8). 1064–1069. 4 indexed citations
7.
Семенов, А. Н., et al.. (2006). Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix. Journal of Crystal Growth. 301-302. 58–61. 21 indexed citations
8.
Meltser, B. Ya., В. А. Соловьев, O. G. Lyublinskaya, et al.. (2005). Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures. Journal of Crystal Growth. 278(1-4). 119–124. 3 indexed citations
9.
Ivanov, S. V., O. G. Lyublinskaya, Yu. B. Vasilyev, et al.. (2004). Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy. Applied Physics Letters. 84(23). 4777–4779. 15 indexed citations
10.
Semenov, A. N., Vladislav Sorokin, В. А. Соловьев, B. Ya. Meltser, & Sergei Ivanov. (2004). Special features of Sb2 and Sb4 incorporation in MBE-grown AlGaAsSb alloys. Semiconductors. 38(3). 266–272. 9 indexed citations
11.
Соловьев, В. А., Ya. V. Terent’ev, А. А. Торопов, et al.. (2003). MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells. Journal of Crystal Growth. 251(1-4). 538–542. 2 indexed citations
12.
Соловьев, В. А., А. А. Торопов, B. Ya. Meltser, et al.. (2002). GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics. Semiconductors. 36(7). 816–820. 6 indexed citations
13.
Sorokin, Vladislav, S. V. Sorokin, А. Н. Семенов, B. Ya. Meltser, & S. V. Ivanov. (2000). Novel approach to the calculation of instability regions in GaInAsSb alloys. Journal of Crystal Growth. 216(1-4). 97–103. 29 indexed citations
14.
Vasilyev, Yu. B., Sergey Suchalkin, K. von Klitzing, et al.. (1999). Evidence for electron-hole hybridization in cyclotron-resonance spectra of InAs/GaSb heterostructures. Physical review. B, Condensed matter. 60(15). 10636–10639. 22 indexed citations
15.
Tsatsul’nikov, A. F., D. A. Bedarev, B. V. Volovik, et al.. (1999). Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface. Semiconductors. 33(8). 886–888. 3 indexed citations
16.
Tsatsul’nikov, A. F., S. V. Ivanov, P. S. Kop’ev, et al.. (1998). Formation of InSb quantum dots in a GaSb matrix. Journal of Electronic Materials. 27(5). 414–417. 11 indexed citations
17.
Иванов, С. В., et al.. (1997). Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy. Semiconductors. 31(10). 1067–1070. 8 indexed citations
18.
Ledentsov, N. N., M. V. Maximov, P. S. Kop’ev, et al.. (1995). Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces. Microelectronics Journal. 26(8). 871–879. 17 indexed citations
19.
Cao, Shuo, M. Willander, А. А. Торопов, et al.. (1995). Resonant coupling of electrons and excitons in an aperiodic superlattice under electric fields studied by photoluminescence spectroscopy. Physical review. B, Condensed matter. 51(23). 17267–17270. 6 indexed citations
20.
Иванов, С. В., T. S. Argunova, V. V. Chaldyshev, et al.. (1993). Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates. Semiconductor Science and Technology. 8(3). 347–356. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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