S. Mesters

483 total citations
22 papers, 402 citations indexed

About

S. Mesters is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, S. Mesters has authored 22 papers receiving a total of 402 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in S. Mesters's work include Semiconductor materials and interfaces (14 papers), Semiconductor materials and devices (8 papers) and Silicon and Solar Cell Technologies (7 papers). S. Mesters is often cited by papers focused on Semiconductor materials and interfaces (14 papers), Semiconductor materials and devices (8 papers) and Silicon and Solar Cell Technologies (7 papers). S. Mesters collaborates with scholars based in Germany, Russia and France. S. Mesters's co-authors include S. Mantl, H. Lüth, L. Vescan, B. Holländer, Michael Goryll, K. Schmidt, K. Szot, T. Hackbarth, R. Liedtke and H.-J. Herzog and has published in prestigious journals such as Applied Physics Letters, Sensors and Actuators B Chemical and Applied Surface Science.

In The Last Decade

S. Mesters

21 papers receiving 390 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Mesters Germany 12 308 231 124 82 42 22 402
J. Guastavino France 10 227 0.7× 91 0.4× 161 1.3× 144 1.8× 16 0.4× 23 348
P C Jaussaud France 13 208 0.7× 189 0.8× 114 0.9× 35 0.4× 7 0.2× 18 361
Akira Obara Japan 11 380 1.2× 235 1.0× 291 2.3× 38 0.5× 6 0.1× 52 465
Seishiro Ohya Japan 12 163 0.5× 101 0.4× 111 0.9× 86 1.0× 22 0.5× 38 305
A. Jakubowicz Switzerland 12 359 1.2× 198 0.9× 165 1.3× 31 0.4× 3 0.1× 44 419
Antti Haarahiltunen Finland 15 566 1.8× 233 1.0× 129 1.0× 89 1.1× 25 0.6× 50 609
H.L. Hughes United States 15 605 2.0× 62 0.3× 221 1.8× 43 0.5× 9 0.2× 62 684
Kimio Hashimoto Japan 11 255 0.8× 249 1.1× 88 0.7× 22 0.3× 5 0.1× 28 342
K. Seibert Germany 9 213 0.7× 169 0.7× 166 1.3× 68 0.8× 17 0.4× 17 346
K. Das United States 11 281 0.9× 158 0.7× 416 3.4× 55 0.7× 10 0.2× 30 498

Countries citing papers authored by S. Mesters

Since Specialization
Citations

This map shows the geographic impact of S. Mesters's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Mesters with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Mesters more than expected).

Fields of papers citing papers by S. Mesters

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Mesters. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Mesters. The network helps show where S. Mesters may publish in the future.

Co-authorship network of co-authors of S. Mesters

This figure shows the co-authorship network connecting the top 25 collaborators of S. Mesters. A scholar is included among the top collaborators of S. Mesters based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Mesters. S. Mesters is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Carius, R., et al.. (2000). Structural, electrical and optical characterization of semiconducting Ru2Si3. Microelectronic Engineering. 50(1-4). 243–248. 11 indexed citations
2.
Lazzari, J.‐L., A. Ronda, F. Arnaud d’Avitaya, et al.. (2000). Chemical vapor deposition of silicon–germanium heterostructures. Journal of Crystal Growth. 216(1-4). 171–184. 29 indexed citations
3.
Mantl, S., B. Holländer, R. Liedtke, et al.. (1999). Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 29–34. 45 indexed citations
4.
Schubert, J., Michael J. Schöning, Markus Siegert, et al.. (1999). Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique. Applied Physics A. 69(7). S803–S805. 24 indexed citations
5.
Zhao, Qing‐Tai, et al.. (1999). Nanometer patterning of epitaxial CoSi2/Si(100) by local oxidation. Solid-State Electronics. 43(6). 1091–1094. 1 indexed citations
6.
Holländer, B., S. Mantl, R. Liedtke, et al.. (1999). Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H+ ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 148(1-4). 200–205. 41 indexed citations
7.
Mantl, S., et al.. (1998). Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100). Thin Solid Films. 321(1-2). 251–255.
8.
Bay, H.L., S. Mesters, C. Dieker, et al.. (1998). Growth and structural characterization of semiconducting Ru2Si3. Journal of Luminescence. 80(1-4). 461–465. 18 indexed citations
9.
Mantl, S., A. Antons, Michael R. Loken, et al.. (1998). Growth, Patterning and Microelectronic Applications of Epitaxial Cobaltdisilicide. MRS Proceedings. 514. 4 indexed citations
10.
Holländer, B., et al.. (1997). Strain and misfit dislocation density in finite lateral size Si1−x Gex films grownby selective epitaxy. Thin Solid Films. 292(1-2). 213–217. 11 indexed citations
11.
Goryll, Michael, L. Vescan, K. Schmidt, et al.. (1997). Size distribution of Ge islands grown on Si(001). Applied Physics Letters. 71(3). 410–412. 92 indexed citations
12.
Mesters, S., et al.. (1997). Vertical MSM photodiodes in silicon based on epitaxial Si/CoSi2/Si. Thin Solid Films. 294(1-2). 351–353. 6 indexed citations
13.
Tisch, Ulrike, B. Holländer, S. Mesters, et al.. (1997). Formation of ternary Co1 − xPdxSi2 on Si (100) by Pd ion implantation in CoSi2/Si (100) heterostructures. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 127-128. 324–327. 3 indexed citations
14.
Holländer, B., et al.. (1996). Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces. Thin Solid Films. 287(1-2). 93–100. 13 indexed citations
15.
Mantl, S., et al.. (1995). Patterning method for silicides based on local oxidation. Applied Physics Letters. 67(23). 3459–3461. 23 indexed citations
16.
Mantl, S., et al.. (1995). Patterning of Silicide Layers by Local Oxidation. MRS Proceedings. 402. 2 indexed citations
17.
Holländer, B., S. Mantl, S. Mesters, et al.. (1994). Formation of unstrained Si1−Ge . layers by high-dose 74Ge ion implantation in SIMOX. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 84(2). 218–221. 14 indexed citations
18.
Muller, Onno, S. Mantl, Klaus Radermacher, et al.. (1993). Allotaxial growth of epitaxial Si/FeSi2/Si heterostructures. Applied Surface Science. 73. 141–145. 11 indexed citations
19.
Mantl, S., et al.. (1993). Formation of epitaxial Si/CoSi2/Si(100) heterostructures using allotaxy. Applied Surface Science. 73. 102–107. 1 indexed citations
20.
Holländer, B., et al.. (1993). Formation of relaxed Si1−Ge layers on SIMOX by high-dose 74Ge ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 777–780. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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