L. Largeau

1.7k citations

55 papers · 1.3k indexed · h-index 21

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in ⓘ

Atomic and Molecular Physics, and Optics 50
- Semiconductor Quantum Structures and Devices 40
Condensed Matter Physics 10
- GaN-based semiconductor devices and materials 9

Co-authors: Jean‐Christophe Harmand (15 shared papers)G. Patriarche (34 shared papers)O. Mauguin (21 shared papers)G. Ungaro (5 shared papers)G. Le Roux (5 shared papers)R. Teissier (2 shared papers)J. Bloch (2 shared papers)Laurent Travers (8 shared papers)
Journals: Applied Physics Letters (17 papers)Journal of Crystal Growth (9 papers)Physical Review B (4 papers)Journal of Applied Physics (4 papers)Journal of Applied Crystallography (2 papers)
Partner nations: France United States Germany

In The Last Decade

L. Largeau

53 papers receiving 1.3k citations

Peers

Countries citing papers authored by L. Largeau

Since Specialization

Citations

This map shows the geographic impact of L. Largeau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Largeau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Largeau more than expected).

Fields of papers citing papers by L. Largeau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Largeau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Largeau. The network helps show where L. Largeau may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Largeau, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Largeau Line = papers co-authored together L. Largeau links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 55 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Optical spectroscopy of two-dimensional layered (C_6H_5C_2H_4-NH_3)_2-PbI_4 perovskite Optics Express ·K. Gauthron, J-S. Lauret, L. Doyennette, Gaëtan Lanty, Antoine Al Choueiry, S. J. Zhang, A. Bréhier, L. Largeau, O. Mauguin, J. Bloch, Emmauelle Deleporte	2010	244
2	Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs Journal of Applied Physics ·R. Teissier, D. Sicault, Jean‐Christophe Harmand, G. Ungaro, G. Le Roux, L. Largeau	2001	106
3	Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN Applied Physics Letters ·Jean‐Christophe Harmand, G. Ungaro, L. Largeau, G. Le Roux	2000	88
4	Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111) Applied Physics Letters ·Abdelkarim Ouerghi, Rachid Belkhou, M. Marangolo, Mathieu G. Silly, S. El Moussaoui, M. Eddrief, L. Largeau, Marc Portail, Fausto Sirotti	2010	56
5	High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition Applied Physics Letters ·R. Jakomin, M. de Kersauson, M. El Kurdi, L. Largeau, O. Mauguin, G. Beaudoin, S. Sauvage, Razvigor Ossikovski, G. Ndong, Marc Chaigneau, I. Sagnes, P. Boucaud	2011	54
6	Metamorphic approach to single quantum dot emission at 1.55μm on GaAs substrate Journal of Applied Physics ·Elizaveta Semenova, Richard Hostein, G. Patriarche, O. Mauguin, L. Largeau, I. Robert‐Philip, A. Beveratos, A. Lemaı̂tre	2008	51
7	Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission Journal of Crystal Growth ·Jean‐Christophe Harmand, G. Ungaro, J.I. Ramos, E. V. K. Rao, G. Saint‐Girons, R. Teissier, G. Le Roux, L. Largeau, G. Patriarche	2001	45
8	Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs Applied Physics Letters ·Lianhe Li, Vincent Sallet, G. Patriarche, L. Largeau, S. Bouchoule, Laurent Travers, Jean‐Christophe Harmand	2003	44
9	Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate Applied Physics Letters ·G. Patriarche, L. Largeau, Jean‐Christophe Harmand, D. Gollub	2004	42
10	Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys Applied Physics Letters ·R. Chtourou, F. Bousbih, S. Bouzid, F.F. Charfi, Jean‐Christophe Harmand, G. Ungaro, L. Largeau	2002	38
11	Spontaneous compliance of the InP∕SrTiO3 heterointerface Applied Physics Letters ·G. Saint‐Girons, C. Priester, P. Régreny, G. Patriarche, L. Largeau, V. Favre‐Nicolin, Guoliang Xu, Y. Robach, M. Gendry, Guy Hollinger	2008	34
12	Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration Scientific Reports ·Romain Cariou, Wanghua Chen, Jean‐Luc Maurice, Jingwen Yu, G. Patriarche, O. Mauguin, L. Largeau, J. Décobert, Pere Roca i Cabarrocas	2016	29
13	Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice Applied Physics Letters ·L. Largeau, Céline Bondoux, G. Patriarche, C. Asplund, Akira Fujioka, F. Salomonsson, M. Hammar	2001	26
14	Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon Applied Physics Letters ·A. Talneau, Christophe Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes, G. Patriarche, Chengxin Pang, H. Benisty	2013	26
15	Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection Journal of Crystal Growth ·Y. Chriqui, L. Largeau, G. Patriarche, G. Saint‐Girons, S. Bouchoule, I. Sagnes, D. Bensahel, Y. Campidelli, O. Kermarrec	2004	26
16	Enhanced optical generation and detection of acoustic nanowaves in microcavities Physical Review B ·N. D. Lanzillotti‐Kimura, A. Fainstein, Bernard Perrin, B. Jusserand, L. Largeau, O. Mauguin, A. Lemaı̂tre	2011	25
17	1.5 µm laser on GaAs with GaInNAsSb quinary quantum well Electronics Letters ·Lianhe Li, Vincent Sallet, G. Patriarche, L. Largeau, S. Bouchoule, K. Merghem, Laurent Travers, Jean‐Christophe Harmand	2003	25
18	Quantum-well saturable absorber at 1.55μm on GaAs substrate with a fast recombination rate Applied Physics Letters ·M. Le Dû, Jean‐Christophe Harmand, O. Mauguin, L. Largeau, Laurent Travers, J. L. Oudar	2006	24
19	Anisotropic and Smooth Inductively Coupled Plasma Etching of III-V Laser Waveguides Using HBr-O[sub 2] Chemistry Journal of The Electrochemical Society ·S. Bouchoule, S. Azouigui, S. Guilet, G. Patriarche, L. Largeau, A. Martinez, L. Le Gratiet, A. Lemaı̂tre, F. Lelarge	2008	24
20	Silicon surface preparation for III-V molecular beam epitaxy Journal of Crystal Growth ·K. Madiomanana, Mounib Bahri, Jean‐Baptiste Rodriguez, L. Largeau, L. Cerutti, O. Mauguin, A. Castellano, G. Patriarche, E. Tournié	2014	22

About L. Largeau

L. Largeau is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry, having authored 55 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (40 papers), Semiconductor Lasers and Optical Devices (15 papers), Photonic and Optical Devices (12 papers), Nanowire Synthesis and Applications (11 papers), Advanced Semiconductor Detectors and Materials (11 papers), Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (9 papers) and Quantum Dots Synthesis And Properties (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (859 citations), Condensed Matter Physics (253 citations), Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (519 citations) and Electronic, Optical and Magnetic Materials (90 citations). L. Largeau has collaborated with scholars based in France, United States and Germany. Frequent co-authors include Jean‐Christophe Harmand, G. Patriarche, O. Mauguin, G. Ungaro, G. Le Roux, R. Teissier, J. Bloch, Laurent Travers, Gaëtan Lanty and Emmauelle Deleporte. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Physical Review B, Journal of Applied Physics and Journal of Applied Crystallography.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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