L. Largeau

1.7k total citations
55 papers, 1.3k citations indexed

About

L. Largeau is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, L. Largeau has authored 55 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Atomic and Molecular Physics, and Optics, 41 papers in Electrical and Electronic Engineering and 14 papers in Biomedical Engineering. Recurrent topics in L. Largeau's work include Semiconductor Quantum Structures and Devices (40 papers), Semiconductor Lasers and Optical Devices (15 papers) and Photonic and Optical Devices (12 papers). L. Largeau is often cited by papers focused on Semiconductor Quantum Structures and Devices (40 papers), Semiconductor Lasers and Optical Devices (15 papers) and Photonic and Optical Devices (12 papers). L. Largeau collaborates with scholars based in France, United States and Germany. L. Largeau's co-authors include Jean‐Christophe Harmand, G. Patriarche, O. Mauguin, G. Ungaro, G. Le Roux, R. Teissier, J. Bloch, Emmauelle Deleporte, A. Bréhier and K. Gauthron and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

L. Largeau

53 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Largeau France 21 1.1k 859 519 253 210 55 1.3k
A. A. Quivy Brazil 18 646 0.6× 891 1.0× 435 0.8× 204 0.8× 146 0.7× 131 1.1k
S. N. Holmes United Kingdom 21 646 0.6× 1.2k 1.3× 512 1.0× 264 1.0× 104 0.5× 111 1.5k
J. M. Ulloa Spain 23 1.3k 1.2× 1.3k 1.5× 818 1.6× 376 1.5× 297 1.4× 127 1.8k
Kwang Hong Lee Singapore 24 1.4k 1.3× 610 0.7× 309 0.6× 139 0.5× 493 2.3× 101 1.6k
G. Cywiński Poland 20 570 0.5× 594 0.7× 449 0.9× 616 2.4× 232 1.1× 117 1.3k
Olivier Demichel France 14 762 0.7× 494 0.6× 424 0.8× 118 0.5× 969 4.6× 18 1.2k
L. J. Guido United States 20 1.1k 1.0× 1.0k 1.2× 307 0.6× 419 1.7× 139 0.7× 77 1.4k
Leiying Ying China 16 593 0.5× 362 0.4× 305 0.6× 400 1.6× 98 0.5× 82 861
H. B. Yuen United States 23 1.5k 1.4× 1.4k 1.6× 262 0.5× 547 2.2× 284 1.4× 81 1.8k
J.‐M. Chauveau France 25 806 0.7× 592 0.7× 1.0k 1.9× 474 1.9× 278 1.3× 98 1.6k

Countries citing papers authored by L. Largeau

Since Specialization
Citations

This map shows the geographic impact of L. Largeau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Largeau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Largeau more than expected).

Fields of papers citing papers by L. Largeau

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Largeau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Largeau. The network helps show where L. Largeau may publish in the future.

Co-authorship network of co-authors of L. Largeau

This figure shows the co-authorship network connecting the top 25 collaborators of L. Largeau. A scholar is included among the top collaborators of L. Largeau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Largeau. L. Largeau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Serna, Samuel, Carlos Alonso‐Ramos, Xavier Le Roux, et al.. (2020). Third-order nonlinear optical susceptibility of crystalline oxide yttria-stabilized zirconia. Photonics Research. 8(2). 110–110. 17 indexed citations
2.
Wang, Yanping, Charles Cornet, Yoan Léger, et al.. (2019). A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon. Journal of Applied Crystallography. 52(4). 809–815. 1 indexed citations
3.
Cariou, Romain, Wanghua Chen, Jean‐Luc Maurice, et al.. (2016). Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration. Scientific Reports. 6(1). 25674–25674. 29 indexed citations
4.
Wang, Yanping, A. Létoublon, Mounib Bahri, et al.. (2015). Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup. Journal of Applied Crystallography. 48(3). 702–710. 16 indexed citations
5.
Wang, Yanping, Julien Stodolna, Mounib Bahri, et al.. (2015). Abrupt GaP/Si hetero-interface using bistepped Si buffer. Applied Physics Letters. 107(19). 15 indexed citations
6.
Bahri, Mounib, Jean‐Baptiste Rodriguez, L. Largeau, et al.. (2014). Silicon surface preparation for III-V molecular beam epitaxy. Journal of Crystal Growth. 413. 17–24. 22 indexed citations
7.
Kurdi, M. El, M. de Kersauson, A. Ghrib, et al.. (2013). (Invited) Strain Engineering for Optical Gain in Germanium. ECS Transactions. 50(9). 363–370. 3 indexed citations
8.
Kersauson, M. de, Mathias Prost, A. Ghrib, et al.. (2013). Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers. Journal of Applied Physics. 113(18). 18 indexed citations
9.
Gauthron, K., L. Doyennette, Gaëtan Lanty, et al.. (2010). Optical spectroscopy of two-dimensional layered (C_6H_5C_2H_4-NH_3)_2-PbI_4 perovskite. Optics Express. 18(6). 5912–5912. 244 indexed citations
10.
Dubourdieu, C., Isabelle Gélard, O. Salicio, et al.. (2010). Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template. HAL (Le Centre pour la Communication Scientifique Directe). 6 indexed citations
11.
Ouerghi, Abdelkarim, Rachid Belkhou, M. Marangolo, et al.. (2010). Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111). Applied Physics Letters. 97(16). 56 indexed citations
12.
Gogneau, N., L. Le Gratiet, Richard Hostein, et al.. (2009). One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications. MRS Proceedings. 1228.
13.
Jeudy, V., C. Testelin, F. Bernardot, et al.. (2007). Domain structure and magnetic anisotropy fluctuations in (Ga,Mn)As: Effect of annealing. Journal of Applied Physics. 102(2). 21 indexed citations
14.
Ciatto, G., Jean‐Christophe Harmand, L. Largeau, & Frank Glas. (2006). Clustering in GaAsSbN alloys as a possible origin of their atypical optical behavior: a Sb K‐edge X‐ray absorption study. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1931–1934. 6 indexed citations
15.
Harmand, Jean‐Christophe, et al.. (2006). Quantum-well saturable absorber at 1.55μm on GaAs substrate with a fast recombination rate. Applied Physics Letters. 88(20). 24 indexed citations
16.
Sallet, Vincent, G. Patriarche, O. Mauguin, L. Largeau, & Laurent Travers. (2006). InAs(Sb) quantum dots grown on GaAs by MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(11). 3997–4000. 5 indexed citations
17.
Sallet, Vincent, L. Largeau, O. Mauguin, Laurent Travers, & Jean‐Christophe Harmand. (2005). MBE growth of InAsN on (100) InAs substrates. physica status solidi (b). 242(6). 18 indexed citations
18.
Li, Lianhe, Vincent Sallet, G. Patriarche, et al.. (2003). Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy. Journal of Crystal Growth. 263(1-4). 58–62. 4 indexed citations
19.
Ungaro, G., I. Sagnes, G. Le Roux, et al.. (2002). GaAsSbN: a material for 1.3-1.55 μm emission. 38. 553–556.
20.
Harmand, Jean‐Christophe, G. Ungaro, J.I. Ramos, et al.. (2001). Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission. Journal of Crystal Growth. 227-228. 553–557. 45 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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