B. G. Svensson

1.7k citations

53 papers · 1.3k indexed · h-index 21

Electrical and Electronic Engineering top 5%
Materials Chemistry top 5%
Electronic, Optical and Magnetic Materials top 5%
Atomic and Molecular Physics, and Optics top 10%
Renewable Energy, Sustainability and the Environment top 10%

Co-authors: Andrej Kuznetsov J. L. Lindström E. V. Monakhov Lasse Vines K. M. Johansen M. O. Aboelfotoh Filip Tuomisto Giovanni Alfieri
Topics: Silicon and Solar Cell Technologies (29 papers)Semiconductor materials and devices (23 papers)Semiconductor materials and interfaces (17 papers)
Cited by: Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: Norway Sweden United Kingdom

In The Last Decade

B. G. Svensson

51 papers receiving 1.2k citations

Peers

Countries citing papers authored by B. G. Svensson

Since Specialization

Citations

This map shows the geographic impact of B. G. Svensson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. G. Svensson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. G. Svensson more than expected).

Fields of papers citing papers by B. G. Svensson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. G. Svensson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. G. Svensson. The network helps show where B. G. Svensson may publish in the future.

Co-authorship network of co-authors of B. G. Svensson

This figure shows the co-authorship network connecting the top 25 collaborators of B. G. Svensson. A scholar is included among the top collaborators of B. G. Svensson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. G. Svensson. B. G. Svensson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics 2018 ·Journal of Applied Physics ·(unknown),B. G. Svensson,Edouard V. Monakhov	4
2	Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 2018 ·APL Materials ·(unknown),Andrej Kuznetsov,B. G. Svensson,Giovanni Alfieri,Andrei Mihăilă,Uwe Badstübner,Aurélien Perron,Lasse Vines,Joel B. Varley	191
3	Electronic properties and morphology of copper oxide/n-type silicon heterostructures 2017 ·Journal of Physics Condensed Matter ·(unknown),Sandeep Gorantla,A.E. Gunnæs,B. G. Svensson,E. V. Monakhov	4
4	Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon 2016 ·physica status solidi (a) ·Л. И. Мурин,С. Б. Ластовский,(unknown),В. П. Маркевич,А. R. Peaker,B. G. Svensson	5
5	Epitaxial Strain-Induced Growth of CuO at Cu₂O/ZnO Interfaces 2016 ·The Journal of Physical Chemistry C ·A.E. Gunnæs,Sandeep Gorantla,Ole Martin Løvvik,Jiantuo Gan,P.A. Carvalho,B. G. Svensson,Edouard V. Monakhov,Kristin Bergum,(unknown),Spyros Diplas	16
6	Zinc-Vacancy–Donor Complex: A Crucial Compensating Acceptor in ZnO 2014 ·Physical Review Applied ·Jan Eric Stehr,K. M. Johansen,Tor S. Bjørheim,Lasse Vines,B. G. Svensson,Weimin Chen,I. A. Buyanova	57
7	Impurity Sublattice Localization in ZnO Revealed by Li Marker Diffusion 2013 ·Physical Review Letters ·Alexander Azarov,Knut Erik Knutsen,(unknown),Lasse Vines,B. G. Svensson,Andrej Kuznetsov	13
8	Reconfigurations and diffusion of trivacancy in silicon 2011 ·Physica B Condensed Matter ·В. П. Маркевич,А. R. Peaker,B. Hamilton,С. Б. Ластовский,Л.И. Мурин,J. Coutinho,Alexander Markevich,M. J. Rayson,P. R. Briddon,B. G. Svensson	2
9	Deuterium diffusion and trapping in hydrothermally grown single crystalline ZnO 2008 ·Applied Physics Letters ·K. M. Johansen,J. S. Christensen,E. V. Monakhov,Andrej Kuznetsov,B. G. Svensson	41
10	Electronic properties of the interface between Si and sputter deposited indium-tin oxide 2008 ·Materials Science and Engineering B ·E. V. Monakhov,R. Balasundaraprabhu,N. Muthukumarasamy,B. G. Svensson	8
11	Formation and origin of the dominating electron trap in irradiatedp-type silicon 2008 ·Physical Review B ·Lasse Vines,E. V. Monakhov,Andrej Kuznetsov,R. Kozłowski,P. Kamiński,B. G. Svensson	20
12	Reversible room temperature interaction of impurities in Si 2005 ·Journal of Physics Condensed Matter ·E. V. Monakhov,B. G. Svensson	2
13	Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide 2004 ·Physica Scripta ·Martin S. Janson,M. K. Linnarsson,(unknown),B. G. Svensson,N. Achtziger,(unknown),Anita Lloyd Spetz,Urban Forsberg	5
14	Divacancy annealing in Si: Influence of hydrogen 2004 ·Physical Review B ·E. V. Monakhov,A. Ulyashin,Giovanni Alfieri,Andrej Kuznetsov,B. S. Avset,B. G. Svensson	24
15	Vacancy-phosphorus complexes in strainedSi1−xGex:Structure and stability 2003 ·Physical review. B, Condensed matter ·S.‐L. Sihto,J. Slotte,(unknown),K. Saarinen,Edouard V. Monakhov,Andrej Kuznetsov,B. G. Svensson	37
16	Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si 2003 ·Journal of Physics Condensed Matter ·E. V. Monakhov,Giovanni Alfieri,B. S. Avset,Anders Hallén,B. G. Svensson	5
17	Characterization of electrically active deep level defects in 4H and 6H SiC 1997 ·Diamond and Related Materials ·J. P. Doyle,M. O. Aboelfotoh,B. G. Svensson,Adolf Schöner,N. Nordell	22
18	Silicide formation and the generation of point defects in silicon 1991 ·Physical Review Letters ·B. G. Svensson,M. O. Aboelfotoh,J. L. Lindström	22
19	On the core concentration and the formation kinetics of thermal donors in silicon 1989 ·Radiation effects and defects in solids ·J. L. Lindström,Dan‐Xia Xu,H. Weman,B. G. Svensson	2
20	Annealing studies of the 862 cm−1 infrared band in silicon 1986 ·physica status solidi (a) ·B. G. Svensson,(unknown)	17

About B. G. Svensson

B. G. Svensson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 53 papers that have together received 1.3k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (29 papers), Semiconductor materials and devices (23 papers) and Semiconductor materials and interfaces (17 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (407 citations), Materials Chemistry (739 citations) and Electrical and Electronic Engineering (875 citations). B. G. Svensson has collaborated with scholars based in Norway, Sweden and United Kingdom. Frequent co-authors include Andrej Kuznetsov, J. L. Lindström, E. V. Monakhov, Lasse Vines, K. M. Johansen, M. O. Aboelfotoh, Filip Tuomisto, Giovanni Alfieri, Edouard V. Monakhov and Yufeng Dong. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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