Adolf Schöner

2.9k total citations
150 papers, 2.4k citations indexed

About

Adolf Schöner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Adolf Schöner has authored 150 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 147 papers in Electrical and Electronic Engineering, 40 papers in Atomic and Molecular Physics, and Optics and 25 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Adolf Schöner's work include Silicon Carbide Semiconductor Technologies (129 papers), Semiconductor materials and devices (91 papers) and Semiconductor materials and interfaces (34 papers). Adolf Schöner is often cited by papers focused on Silicon Carbide Semiconductor Technologies (129 papers), Semiconductor materials and devices (91 papers) and Semiconductor materials and interfaces (34 papers). Adolf Schöner collaborates with scholars based in Sweden, Germany and Japan. Adolf Schöner's co-authors include Gerhard Pensl, N. Nordell, W. J. Choyke, T. Dalibor, Tsunenobu Kimoto, Sergey A. Reshanov, Hiroyuki Nagasawa, H. Matsunami, M. Krieger and K. Rottner and has published in prestigious journals such as Nature Communications, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Adolf Schöner

145 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Adolf Schöner Sweden 23 2.2k 700 389 307 133 150 2.4k
Hidekazu Tsuchida Japan 31 3.3k 1.5× 909 1.3× 615 1.6× 306 1.0× 233 1.8× 208 3.4k
Andrey O. Konstantinov Sweden 21 1.6k 0.7× 433 0.6× 267 0.7× 445 1.4× 115 0.9× 83 1.8k
N. Nordell Sweden 20 1.9k 0.8× 654 0.9× 298 0.8× 204 0.7× 90 0.7× 66 2.0k
M. Bhatnagar United States 8 1.5k 0.7× 524 0.7× 175 0.4× 231 0.8× 97 0.7× 15 1.7k
Q. Wahab Sweden 23 1.9k 0.9× 546 0.8× 325 0.8× 420 1.4× 158 1.2× 96 2.1k
A. А. Lebedev Russia 19 1.5k 0.7× 534 0.8× 191 0.5× 598 1.9× 102 0.8× 238 1.9k
J.H. Zhao United States 25 1.5k 0.7× 484 0.7× 227 0.6× 158 0.5× 41 0.3× 112 1.6k
C. Hallin Sweden 31 2.9k 1.3× 822 1.2× 604 1.6× 571 1.9× 224 1.7× 110 3.1k
Joseph J. Sumakeris United States 23 1.6k 0.7× 372 0.5× 301 0.8× 118 0.4× 90 0.7× 70 1.7k
M. Ghezzo United States 20 1.3k 0.6× 349 0.5× 147 0.4× 212 0.7× 100 0.8× 73 1.4k

Countries citing papers authored by Adolf Schöner

Since Specialization
Citations

This map shows the geographic impact of Adolf Schöner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Adolf Schöner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Adolf Schöner more than expected).

Fields of papers citing papers by Adolf Schöner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Adolf Schöner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Adolf Schöner. The network helps show where Adolf Schöner may publish in the future.

Co-authorship network of co-authors of Adolf Schöner

This figure shows the co-authorship network connecting the top 25 collaborators of Adolf Schöner. A scholar is included among the top collaborators of Adolf Schöner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Adolf Schöner. Adolf Schöner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sampayan, S., Paulius Grivickas, Adam Conway, et al.. (2021). Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties. Scientific Reports. 11(1). 6859–6859. 12 indexed citations
2.
Bartolf, Holger, Urs Gysin, Thilo Glatzel, et al.. (2015). Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging. Microelectronic Engineering. 148. 1–4. 5 indexed citations
3.
Лучинин, В. В., et al.. (2014). Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface. MRS Proceedings. 1693. 1 indexed citations
4.
Hertel, Stefan, Daniel Waldmann, Johannes Jobst, et al.. (2012). Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nature Communications. 3(1). 957–957. 99 indexed citations
5.
Esteve, R., Sergey A. Reshanov, Susan Savage, et al.. (2011). Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures. Journal of The Electrochemical Society. 158(5). H496–H496. 5 indexed citations
6.
Bakowski, Mietek, et al.. (2010). Silicon Carbide APD with Improved Detection Sensitivity and Stability. Materials science forum. 645-648. 1089–1092. 1 indexed citations
7.
Linnarsson, Margareta K., Jan Isberg, Adolf Schöner, & Anders Hallén. (2008). A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond. Materials science forum. 600-603. 453–456. 1 indexed citations
8.
Pensl, Gerhard, Svetlana Beljakowa, Thomas Frank, et al.. (2008). Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors. physica status solidi (b). 245(7). 1378–1389. 56 indexed citations
9.
Bakowski, Mietek, Adolf Schöner, Per Ericsson, et al.. (2007). Development of 3C-SiC MOSFETs. Journal of Telecommunications and Information Technology. 49–56. 16 indexed citations
10.
Schöner, Adolf, et al.. (2006). Realization of Large Area Vertical 3C-SiC MOSFET Devices. Materials science forum. 527-529. 1273–1276. 3 indexed citations
11.
Schöner, Adolf, et al.. (2004). Pressure Dependence of Aluminum Doping in SiC Vapor Phase Epitaxy. MRS Proceedings. 815. 1 indexed citations
12.
Peters, Dethard, Adolf Schöner, Peter Friedrichs, & D. Stephani. (2003). 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications. Materials science forum. 433-436. 769–772. 33 indexed citations
13.
Schöner, Adolf, et al.. (2002). Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation. Materials science forum. 389-393. 187–190. 7 indexed citations
14.
Rottner, K., Di Mou, Anne Henry, et al.. (1999). SiC power devices for high voltage applications. Materials Science and Engineering B. 61-62. 330–338. 64 indexed citations
15.
Linnarsson, Margareta K., Martin S. Janson, Adolf Schöner, et al.. (1998). Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC. Materials science forum. 264-268. 761–764. 3 indexed citations
16.
Schöner, Adolf, N. Nordell, K. Rottner, R. Helbig, & Gerhard Pensl. (1996). Dependence of the aluminium ionization energy on doping concentration and compensation in 6H-SiC. 493–496. 6 indexed citations
17.
Doyle, J. P., M. O. Aboelfotoh, Margareta K. Linnarsson, et al.. (1996). Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation. MRS Proceedings. 423. 15 indexed citations
18.
Haberstroh, Ch., W. Suttrop, Adolf Schöner, et al.. (1993). CVD growth and characterization of single-crystalline 6H silicon carbide. Physica B Condensed Matter. 185(1-4). 75–78. 16 indexed citations
19.
Götz, Werner, Adolf Schöner, Gerhard Pensl, et al.. (1993). Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC. Materials science forum. 117-118. 495–500. 3 indexed citations
20.
Roos, Goedele, Adolf Schöner, Gerhard Pensl, et al.. (1989). Hall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs. Materials science forum. 38-41. 951–956. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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