B. S. Avset

1.0k total citations
15 papers, 294 citations indexed

About

B. S. Avset is a scholar working on Electrical and Electronic Engineering, Nuclear and High Energy Physics and Computational Mechanics. According to data from OpenAlex, B. S. Avset has authored 15 papers receiving a total of 294 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 4 papers in Nuclear and High Energy Physics and 3 papers in Computational Mechanics. Recurrent topics in B. S. Avset's work include Silicon and Solar Cell Technologies (13 papers), Semiconductor materials and devices (11 papers) and Thin-Film Transistor Technologies (7 papers). B. S. Avset is often cited by papers focused on Silicon and Solar Cell Technologies (13 papers), Semiconductor materials and devices (11 papers) and Thin-Film Transistor Technologies (7 papers). B. S. Avset collaborates with scholars based in Norway, Sweden and Germany. B. S. Avset's co-authors include Edouard V. Monakhov, B. G. Svensson, Giovanni Alfieri, M. Mikelsen, Bengt Svensson, Anders Hallén, B. G. Svensson, E. V. Monakhov, J. Härkönen and Л.И. Мурин and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Physical Review B.

In The Last Decade

B. S. Avset

15 papers receiving 286 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. S. Avset Norway	9	280	77	62	43	39	15	294
Л. Ф. Макаренко Belarus	11	287 1.0×	109 1.4×	85 1.4×	26 0.6×	65 1.7×	42	314
M. Rattaggi Italy	10	175 0.6×	24 0.3×	27 0.4×	24 0.6×	102 2.6×	29	222
P. Pusa Finland	6	75 0.3×	52 0.7×	23 0.4×	22 0.5×	31 0.8×	14	119
K.L. Hughes United States	8	529 1.9×	22 0.3×	55 0.9×	7 0.2×	12 0.3×	17	543
F. Fang United States	5	117 0.4×	61 0.8×	49 0.8×	4 0.1×	38 1.0×	9	153
Y. Yeh United States	7	132 0.5×	84 1.1×	38 0.6×	6 0.1×	14 0.4×	31	175
R. Kotte Germany	8	70 0.3×	21 0.3×	25 0.4×	23 0.5×	108 2.8×	25	172
V. Khomenkov Ukraine	8	63 0.2×	19 0.2×	37 0.6×	72 1.7×	41 1.1×	20	152
E. Simoen Belgium	13	401 1.4×	104 1.4×	57 0.9×	8 0.2×	21 0.5×	35	424
Tomislav Brodar Croatia	10	223 0.8×	60 0.8×	43 0.7×	6 0.1×	13 0.3×	15	251

Countries citing papers authored by B. S. Avset

Since Specialization

Citations

This map shows the geographic impact of B. S. Avset's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. S. Avset with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. S. Avset more than expected).

Fields of papers citing papers by B. S. Avset

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. S. Avset. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. S. Avset. The network helps show where B. S. Avset may publish in the future.

Co-authorship network of co-authors of B. S. Avset

This figure shows the co-authorship network connecting the top 25 collaborators of B. S. Avset. A scholar is included among the top collaborators of B. S. Avset based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. S. Avset. B. S. Avset is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Monakhov, Edouard V., et al.. (2012). Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen. Physical Review B. 85(8). 5 indexed citations

Pintilie, Ioana, et al.. (2008). Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon. Physical Review B. 77(7). 9 indexed citations

Мурин, Л.И., et al.. (2008). On the identity of a crucial defect contributing to leakage current in silicon particle detectors. Applied Physics Letters. 92(13). 23 indexed citations

Monakhov, Edouard V., et al.. (2007). Room-temperature annealing of vacancy-type defect in high-purityn-type Si. Physical Review B. 76(23). 16 indexed citations

Mikelsen, M., J. S. Christensen, Edouard V. Monakhov, et al.. (2007). Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon. Physical Review B. 75(15). 35 indexed citations

Mikelsen, M., E. V. Monakhov, B. S. Avset, & B. G. Svensson. (2006). On the formation of the L-centre in silicon during heat treatment in the temperature range 205–285°C. Physica Scripta. T126. 81–84. 7 indexed citations

Mikelsen, M., E. V. Monakhov, Giovanni Alfieri, et al.. (2005). Annealing of defects in irradiated silicon detector materials with high oxygen content. Journal of Physics Condensed Matter. 17(22). S2247–S2253. 9 indexed citations

Mikelsen, M., Edouard V. Monakhov, Giovanni Alfieri, B. S. Avset, & B. G. Svensson. (2005). Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon. Physical Review B. 72(19). 61 indexed citations

Monakhov, Edouard V., A. Ulyashin, F.D. Auret, et al.. (2005). Defect Behaviour in Deuterated and Non-Deuterated n-Type Si. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 553–560. 1 indexed citations

10.

Monakhov, E. V., A. Ulyashin, Giovanni Alfieri, et al.. (2004). Divacancy annealing in Si: Influence of hydrogen. Physical Review B. 69(15). 24 indexed citations

11.

Svensson, B. G., E. V. Monakhov, Giovanni Alfieri, et al.. (2004). Defects and diffusion in high purity silicon for detector applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(9). 2250–2257. 2 indexed citations

12.

Alfieri, Giovanni, Edouard V. Monakhov, B. S. Avset, & B. G. Svensson. (2003). Evidence for identification of the divacancy-oxygen center in Si. Physical review. B, Condensed matter. 68(23). 47 indexed citations

13.

Monakhov, E. V., Giovanni Alfieri, B. S. Avset, Anders Hallén, & B. G. Svensson. (2003). Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si. Journal of Physics Condensed Matter. 15(39). S2771–S2777. 5 indexed citations

14.

Monakhov, Edouard V., B. S. Avset, Anders Hallén, & Bengt Svensson. (2002). Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si. Physical review. B, Condensed matter. 65(23). 48 indexed citations

15.

Schjølberg‐Henriksen, Kari, et al.. (2000). HERA-B detectors with p-spray isolation on the n-side; unirradiated results. IEEE Transactions on Nuclear Science. 47(4). 1371–1374. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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