N. Achtziger

620 total citations
45 papers, 462 citations indexed

About

N. Achtziger is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, N. Achtziger has authored 45 papers receiving a total of 462 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 5 papers in Computational Mechanics. Recurrent topics in N. Achtziger's work include Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and interfaces (19 papers) and Semiconductor materials and devices (18 papers). N. Achtziger is often cited by papers focused on Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and interfaces (19 papers) and Semiconductor materials and devices (18 papers). N. Achtziger collaborates with scholars based in Germany, Switzerland and Sweden. N. Achtziger's co-authors include W. Witthuhn, J. Grillenberger, U. Reislöhner, Martin S. Janson, B. G. Svensson, Margareta K. Linnarsson, R. Sielemann, J. Meier, H. Wolf and Gerhard Pensl and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

N. Achtziger

45 papers receiving 446 citations

Peers

Countries citing papers authored by N. Achtziger

Since Specialization

Citations

This map shows the geographic impact of N. Achtziger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Achtziger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Achtziger more than expected).

Fields of papers citing papers by N. Achtziger

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Achtziger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Achtziger. The network helps show where N. Achtziger may publish in the future.

Co-authorship network of co-authors of N. Achtziger

This figure shows the co-authorship network connecting the top 25 collaborators of N. Achtziger. A scholar is included among the top collaborators of N. Achtziger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Achtziger. N. Achtziger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide 2004 ·Physica Scripta ·Martin S. Janson, M. K. Linnarsson, (unknown), B. G. Svensson, N. Achtziger, (unknown), Anita Lloyd Spetz, Urban Forsberg	5
2	Tungsten in silicon carbide: Band-gap states and their polytype dependence 2000 ·Physical review. B, Condensed matter ·N. Achtziger, (unknown), R. Sielemann, (unknown), J. Grillenberger, W. Witthuhn	20
3	Radiotracer identification of a Ta-related deep level in 4H–SiC 2000 ·Journal of Applied Physics ·J. Grillenberger, N. Achtziger, R. Sielemann, W. Witthuhn	9
4	Effect of implant activation annealing conditions on the inversion channel mobility in 4H- and 6H-SiC MOSETs 1999 ·Journal of Electronic Materials ·N. Achtziger, (unknown), W. Witthuhn, Margareta K. Linnarsson, Martin S. Janson, B. G. Svensson	3
5	Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants 1999 ·Journal of Physics D Applied Physics ·M. Wienecke, B. Reinhold, J. Röhrich, J. Bollmann, N. Achtziger, U. Reislöhner, W. Witthuhn, (unknown)	2
6	Radiotracer spectroscopy of deep levels in the semiconductor band gap 1999 ·Hyperfine Interactions ·N. Achtziger, J. Grillenberger, W. Witthuhn	5
7	Investigation of indium-defect pairs in CdTe by PAC spectroscopy 1999 ·Journal of Crystal Growth ·U. Reislöhner, N. Achtziger, W. Witthuhn	5
8	Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC 1998 ·Applied Physics Letters ·J. Grillenberger, N. Achtziger, Florian Günther, W. Witthuhn	5
9	Band-gap states of Ti, V, and Cr in4H-SiC: Identification and characterization by elemental transmutation of radioactive isotopes 1998 ·Physical review. B, Condensed matter ·N. Achtziger, W. Witthuhn	47
10	Band gap states of V and Cr in 6H-silicon carbide 1997 ·Applied Physics A ·N. Achtziger, J. Grillenberger, W. Witthuhn	10
11	Hafnium, cadmium and indium impurities in 4H-SiC observed by perturbed angular correlation spectroscopy 1997 ·Diamond and Related Materials ·(unknown), N. Achtziger, D. Forkel‐Wirth, Κ. Freitag, J. Grillenberger, Martin Kaltenhäuser, U. Reislöhner, (unknown), M. Uhrmacher, W. Witthuhn	1
12	Structural and electrical investigation of implantation damage annealing in CdTe 1996 ·Semiconductor Science and Technology ·N. Achtziger, J. Bollmann, (unknown), B. Reinhold, U. Reislöhner, J. Röhrich, (unknown), M. Wienecke, W. Witthuhn	5
13	Complex formation at indium donors in p-CdTe 1996 ·Journal of Crystal Growth ·U. Reislöhner, N. Achtziger, (unknown), W. Witthuhn	8
14	Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy 1995 ·Solid State Communications ·(unknown), N. Achtziger, Almut Burchard, (unknown), M. Deicher, (unknown), R. Magerle, J.G. Marques, J. Meier, Walter Pfeiffer, U. Reislöhner, (unknown), M. Toulemonde, W. Witthuhn	7
15	Perturbed-angular-correlation spectroscopy of the fluctuating hyperfine interaction at Cd-donor pairs in silicon: An approach to electronic transitions at impurities in semiconductors 1993 ·Physical review. B, Condensed matter ·N. Achtziger, W. Witthuhn	29
16	Combination of Deep Level Transient Spectroscopy and Transmutation of Radioactive Impurities 1992 ·Materials science forum ·Gerhard Pensl, Maik Lang, (unknown), N. Achtziger, M. Uhrmacher	4
17	Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In* 1991 ·Applied Physics A ·Manfred Lang, Gerhard Pensl, (unknown), N. Achtziger, M. Uhrmacher	14
18	Investigation of cadmium-hydrogen complexes in silicon 1991 ·Physica B Condensed Matter ·(unknown), N. Achtziger, A. Baurichter, (unknown), Birgit Vogt, W. Witthuhn	8
19	Investigation of cadmium-donor pairs in silicon 1989 ·Applied Physics Letters ·N. Achtziger, (unknown), (unknown), H. Wolf, W. Witthuhn	16
20	Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs 1989 ·Materials Science and Engineering B ·N. Achtziger, A. Baurichter, (unknown), (unknown), (unknown), (unknown), H. Wolf, W. Witthuhn	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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