J. S. Christensen

954 total citations
45 papers, 808 citations indexed

About

J. S. Christensen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. S. Christensen has authored 45 papers receiving a total of 808 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in J. S. Christensen's work include Silicon and Solar Cell Technologies (27 papers), Semiconductor materials and interfaces (23 papers) and Ion-surface interactions and analysis (12 papers). J. S. Christensen is often cited by papers focused on Silicon and Solar Cell Technologies (27 papers), Semiconductor materials and interfaces (23 papers) and Ion-surface interactions and analysis (12 papers). J. S. Christensen collaborates with scholars based in Norway, Sweden and Germany. J. S. Christensen's co-authors include Andrej Kuznetsov, B. G. Svensson, Bengt Svensson, A. Holt, A. Bentzen, E. V. Monakhov, Thomas Moe Börseth, Henry H. Radamson, A. Nylandsted Larsen and Edouard V. Monakhov and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. S. Christensen

45 papers receiving 784 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. S. Christensen Norway 16 617 382 293 131 82 45 808
M.N. Séméria France 17 713 1.2× 413 1.1× 188 0.6× 52 0.4× 53 0.6× 38 853
J. Strane United States 9 401 0.6× 209 0.5× 168 0.6× 72 0.5× 68 0.8× 23 531
Temel Büyüklimanli United States 15 509 0.8× 197 0.5× 156 0.5× 58 0.4× 92 1.1× 37 625
Akiko Ueda Japan 13 214 0.3× 316 0.8× 238 0.8× 49 0.4× 69 0.8× 51 540
С. Б. Ластовский Belarus 12 436 0.7× 321 0.8× 185 0.6× 35 0.3× 68 0.8× 54 667
Ch. Dieker Germany 15 699 1.1× 427 1.1× 475 1.6× 87 0.7× 32 0.4× 39 890
Akira Ohsawa Japan 15 538 0.9× 204 0.5× 240 0.8× 133 1.0× 42 0.5× 41 716
P. M. Zagwijn Netherlands 14 375 0.6× 241 0.6× 247 0.8× 43 0.3× 136 1.7× 32 591
M. Baleva Bulgaria 14 348 0.6× 369 1.0× 208 0.7× 71 0.5× 39 0.5× 67 555
Byungha Shin United States 13 638 1.0× 251 0.7× 243 0.8× 65 0.5× 40 0.5× 21 723

Countries citing papers authored by J. S. Christensen

Since Specialization
Citations

This map shows the geographic impact of J. S. Christensen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. S. Christensen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. S. Christensen more than expected).

Fields of papers citing papers by J. S. Christensen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. S. Christensen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. S. Christensen. The network helps show where J. S. Christensen may publish in the future.

Co-authorship network of co-authors of J. S. Christensen

This figure shows the co-authorship network connecting the top 25 collaborators of J. S. Christensen. A scholar is included among the top collaborators of J. S. Christensen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. S. Christensen. J. S. Christensen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Palcut, Marián, J. S. Christensen, Kjell Wiik, & Tor Grande. (2008). Impurity diffusion of 141Pr in LaMnO3, LaCoO3 and LaFeO3 materials. Physical Chemistry Chemical Physics. 10(43). 6544–6544. 35 indexed citations
2.
Großner, Ulrike, Spyros Diplas, Annett Thøgersen, et al.. (2008). Influence of Annealing on the Al<sub>2</sub>O<sub>3</sub>/4H-SiC Interface. Materials science forum. 600-603. 767–770. 1 indexed citations
3.
Johansen, K. M., J. S. Christensen, E. V. Monakhov, Andrej Kuznetsov, & B. G. Svensson. (2008). Deuterium diffusion and trapping in hydrothermally grown single crystalline ZnO. Applied Physics Letters. 93(15). 41 indexed citations
4.
Diplas, Spyros, Annett Thøgersen, J. S. Christensen, et al.. (2008). Interfacial studies of Al 2 O 3 deposited on 4H‐SiC(0001). Surface and Interface Analysis. 40(3-4). 822–825. 13 indexed citations
5.
Kögler, R., A. Mücklich, F. Eichhorn, et al.. (2007). Praseodymium compound formation in silicon by ion beam synthesis. Vacuum. 81(10). 1318–1322. 1 indexed citations
6.
Svensson, Bengt, Thomas Moe Börseth, K. M. Johansen, et al.. (2007). Hydrothermally Grown Single-Crystalline Zinc Oxide; Characterization and Modification. MRS Proceedings. 1035. 6 indexed citations
7.
Bentzen, A., A. Holt, Radovan Kopecek, et al.. (2006). Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing. Journal of Applied Physics. 99(9). 80 indexed citations
8.
Bentzen, A., Gunnar Schubert, J. S. Christensen, B. G. Svensson, & A. Holt. (2006). Influence of temperature during phosphorus emitter diffusion from a spray‐on source in multicrystalline silicon solar cell processing. Progress in Photovoltaics Research and Applications. 15(4). 281–289. 17 indexed citations
9.
Christensen, J. S., et al.. (2006). Analysis of thin layers and interfaces in ITO/a-Si:H/c-Si heterojunction solar cell structures by secondary ion mass spectrometry. Thin Solid Films. 511-512. 93–97. 14 indexed citations
10.
Großner, Ulrike, et al.. (2006). High Temperature Annealing Study of Al<sub>2</sub>O<sub>3</sub> Deposited by ALCVD on n-Type 4H-SiC. Materials science forum. 527-529. 1067–1070. 8 indexed citations
11.
Bentzen, A., A. Holt, J. S. Christensen, & Bengt Svensson. (2006). High concentration in-diffusion of phosphorus in Si from a spray-on source. Journal of Applied Physics. 99(6). 46 indexed citations
12.
Monakhov, E. V., et al.. (2005). Evolution of high-dose implanted hydrogen in ZnO. Superlattices and Microstructures. 38(4-6). 472–478. 5 indexed citations
13.
Christensen, J. S.. (2004). Dopant diffusion in Si and SiGe. KTH Publication Database DiVA (KTH Royal Institute of Technology). 7 indexed citations
14.
Kögler, R., et al.. (2003). Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 587–592. 1 indexed citations
15.
Christensen, J. S., Andrej Kuznetsov, Henry H. Radamson, & B. G. Svensson. (2001). Phosphorus Diffusion in Si<sub>1-x </sub>Ge<sub>x</sub>. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 194-199. 709–716. 5 indexed citations
16.
Kuznetsov, Andrej, et al.. (2001). Dopant redistribution and formation of electrically active complexes in SiGe. Materials Science in Semiconductor Processing. 4(1-3). 217–223. 2 indexed citations
17.
Lévêque, Patrick, A. Yu. Kuznetsov, J. S. Christensen, B. G. Svensson, & A. Nylandsted Larsen. (2001). Irradiation enhanced diffusion of boron in delta-doped silicon. Journal of Applied Physics. 89(10). 5400–5405. 6 indexed citations
18.
Janson, Martin S., Margareta K. Linnarsson, J. S. Christensen, et al.. (2001). Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 194-199. 597–610. 1 indexed citations
19.
Christensen, J. S., Andrej Kuznetsov, Henry H. Radamson, & B. G. Svensson. (2001). Phosphorus diffusion in silicon; influence of annealing conditions. MRS Proceedings. 669. 1 indexed citations
20.
Larsen, A. Nylandsted, J. S. Christensen, M. Fanciulli, et al.. (2000). Tin-vacancy acceptor levels in electron-irradiated n-type silicon. Physical review. B, Condensed matter. 62(7). 4535–4544. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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