Л. И. Мурин

1.5k total citations
74 papers, 1.2k citations indexed

About

Л. И. Мурин is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Л. И. Мурин has authored 74 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 45 papers in Materials Chemistry and 28 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Л. И. Мурин's work include Silicon and Solar Cell Technologies (65 papers), Silicon Nanostructures and Photoluminescence (44 papers) and Semiconductor materials and interfaces (26 papers). Л. И. Мурин is often cited by papers focused on Silicon and Solar Cell Technologies (65 papers), Silicon Nanostructures and Photoluminescence (44 papers) and Semiconductor materials and interfaces (26 papers). Л. И. Мурин collaborates with scholars based in Belarus, United Kingdom and Sweden. Л. И. Мурин's co-authors include В. П. Маркевич, J. L. Lindström, А. R. Peaker, V. V. Litvinov, J. Coutinho, Tomas Hallberg, R. Jones, Sven Öberg, L. Dobaczewski and V. V. Emtsev and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Л. И. Мурин

72 papers receiving 1.1k citations

Peers

Л. И. Мурин

EEE

AMPO

NHEP

M. Hempstead United Kingdom

Osamu Sugiura Japan

L. J. Cheng United States

H. Ohyama Japan

D. Bräunig Germany

R. Vanderhaghen France

F.J. Demond Germany

K. Graff Germany

Yu Hang Lai United States

J. W. Cleland United States

M. Hempstead United Kingdom

Л. И. Мурин

601 ×0.6

EEE

491 ×0.9

AMPO

380 ×0.8

42 ×0.2

29 ×0.6

NHEP

Citations per year, relative to Л. И. Мурин Л. И. Мурин (= 1×) peers M. Hempstead

Countries citing papers authored by Л. И. Мурин

Since Specialization

Citations

This map shows the geographic impact of Л. И. Мурин's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Л. И. Мурин with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Л. И. Мурин more than expected).

Fields of papers citing papers by Л. И. Мурин

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Л. И. Мурин. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Л. И. Мурин. The network helps show where Л. И. Мурин may publish in the future.

Co-authorship network of co-authors of Л. И. Мурин

This figure shows the co-authorship network connecting the top 25 collaborators of Л. И. Мурин. A scholar is included among the top collaborators of Л. И. Мурин based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Л. И. Мурин. Л. И. Мурин is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Маркевич, В. П., J. Coutinho, Iain F. Crowe, et al.. (2019). Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics. 125(18). 36 indexed citations

Маркевич, В. П., Matthew P. Halsall, Л. И. Мурин, et al.. (2018). Lifetime degradation of n-type Czochralski silicon after hydrogenation. Journal of Applied Physics. 123(16). 4 indexed citations

Макаренко, Л. Ф., et al.. (2018). INJECTION ANNEALING OF THE SELF DI-INTERSTITIAL – OXYGEN COMPLEX IN p-TYPE SILICON. 54(2). 220–228.

Маркевич, В. П., Matthew P. Halsall, А. R. Peaker, et al.. (2017). Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon. physica status solidi (RRL) - Rapid Research Letters. 11(8). 17 indexed citations

Ластовский, С. Б., et al.. (2016). Radiation-induced bistable centers with deep levels in silicon n +–p structures. Semiconductors. 50(6). 751–755. 10 indexed citations

Маркевич, В. П., А. R. Peaker, Bruce Hamilton, et al.. (2015). Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 242. 290–295. 8 indexed citations

Маркевич, В. П., А. R. Peaker, B. Hamilton, et al.. (2010). Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon. physica status solidi (a). 208(3). 568–571. 28 indexed citations

Маркевич, В. П., et al.. (2009). Formation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 156-158. 299–304. 7 indexed citations

Мурин, Л. И., B. G. Svensson, J. L. Lindström, В. П. Маркевич, & C. A. Londos. (2009). Trivacancy-oxygen complex in silicon: Local vibrational mode characterization. Physica B Condensed Matter. 404(23-24). 4568–4571. 9 indexed citations

10.

Маркевич, В. П., et al.. (2006). Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals. Materials Science in Semiconductor Processing. 9(4-5). 613–618. 3 indexed citations

11.

Маркевич, В. П., А. R. Peaker, V. V. Litvinov, V. V. Emtsev, & Л. И. Мурин. (2004). Electronic properties of antimony-vacancy complex in Ge crystals. Journal of Applied Physics. 95(8). 4078–4083. 64 indexed citations

12.

Маркевич, В. П., А. R. Peaker, Л. И. Мурин, & N. V. Abrosimov. (2003). Oxygen-related radiation-induced defects in SiGe alloys. Journal of Physics Condensed Matter. 15(39). S2835–S2842. 5 indexed citations

13.

Litvinov, V. V., et al.. (2002). Local vibrational modes of the oxygen-vacancy complex in germanium. Semiconductors. 36(6). 621–624. 8 indexed citations

14.

Coutinho, J., R. Jones, Л. И. Мурин, et al.. (2001). Thermal Double Donors and Quantum Dots. Physical Review Letters. 87(23). 235501–235501. 25 indexed citations

15.

Мурин, Л. И., В. П. Маркевич, M. Suezawa, et al.. (2001). Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies. Physica B Condensed Matter. 302-303. 180–187. 9 indexed citations

16.

Khirunenko, Lyudmila I., et al.. (2001). Self-interstitial-oxygen related defects in low-temperature irradiated Si. Physica B Condensed Matter. 308-310. 458–461. 12 indexed citations

17.

Маркевич, В. П., Л. И. Мурин, M. Suezawa, et al.. (2000). Observation and theory of theV−O−H2complex in silicon. Physical review. B, Condensed matter. 61(19). 12964–12969. 17 indexed citations

18.

Маркевич, В. П., et al.. (1999). Local vibrational mode spectroscopy of thermal donors in germanium. Physica B Condensed Matter. 273-274. 570–574. 9 indexed citations

19.

Öberg, Sven, Chris Ewels, R. Jones, et al.. (1998). First Stage of Oxygen Aggregation in Silicon: The Oxygen Dimer. Physical Review Letters. 81(14). 2930–2933. 44 indexed citations

20.

Jiménez, J., et al.. (1989). Optical excitation of the metastable EL2/emph>level. Physical review. B, Condensed matter. 39(18). 13310–13315. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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