Л.И. Мурин

1.1k total citations
65 papers, 853 citations indexed

About

Л.И. Мурин is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Л.И. Мурин has authored 65 papers receiving a total of 853 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 36 papers in Materials Chemistry and 25 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Л.И. Мурин's work include Silicon and Solar Cell Technologies (48 papers), Silicon Nanostructures and Photoluminescence (33 papers) and Semiconductor materials and interfaces (25 papers). Л.И. Мурин is often cited by papers focused on Silicon and Solar Cell Technologies (48 papers), Silicon Nanostructures and Photoluminescence (33 papers) and Semiconductor materials and interfaces (25 papers). Л.И. Мурин collaborates with scholars based in Belarus, Sweden and United Kingdom. Л.И. Мурин's co-authors include В. П. Маркевич, J. L. Lindström, Tomas Hallberg, А. R. Peaker, Л. Ф. Макаренко, L. Dobaczewski, B. G. Svensson, B. G. Svensson, J. Coutinho and С. Б. Ластовский and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Л.И. Мурин

64 papers receiving 822 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Л.И. Мурин Belarus	16	792	355	338	116	46	65	853
D. Bräunig Germany	16	1.1k 1.4×	789 2.2×	191 0.6×	62 0.5×	10 0.2×	58	1.2k
H. Mannsperger Germany	10	339 0.4×	242 0.7×	78 0.2×	75 0.6×	22 0.5×	19	445
M. Siad Algeria	11	306 0.4×	177 0.5×	178 0.5×	17 0.1×	34 0.7×	35	412
J.C. Pesant France	13	306 0.4×	153 0.4×	161 0.5×	24 0.2×	9 0.2×	34	406
R. Gröetzschel Germany	12	200 0.3×	149 0.4×	151 0.4×	97 0.8×	10 0.2×	41	337
L. Švob France	14	465 0.6×	328 0.9×	222 0.7×	18 0.2×	12 0.3×	36	588
N. D. Wilsey United States	13	384 0.5×	166 0.5×	399 1.2×	27 0.2×	5 0.1×	32	561
J. Rosner United States	6	205 0.3×	162 0.5×	63 0.2×	36 0.3×	48 1.0×	9	351
Jack Yuan-Chen Sun United States	10	607 0.8×	196 0.6×	233 0.7×	41 0.4×	4 0.1×	12	642
Z G Wang China	10	163 0.2×	182 0.5×	124 0.4×	32 0.3×	7 0.2×	23	326

Countries citing papers authored by Л.И. Мурин

Since Specialization

Citations

This map shows the geographic impact of Л.И. Мурин's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Л.И. Мурин with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Л.И. Мурин more than expected).

Fields of papers citing papers by Л.И. Мурин

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Л.И. Мурин. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Л.И. Мурин. The network helps show where Л.И. Мурин may publish in the future.

Co-authorship network of co-authors of Л.И. Мурин

This figure shows the co-authorship network connecting the top 25 collaborators of Л.И. Мурин. A scholar is included among the top collaborators of Л.И. Мурин based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Л.И. Мурин. Л.И. Мурин is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Мурин, Л.И., et al.. (2016). Thermally stable carbon–oxygen complexes in irradiated silicon crystals. Inorganic Materials Applied Research. 7(2). 192–195. 2 indexed citations

Макаренко, Л. Ф., et al.. (2014). Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon. Semiconductors. 48(11). 1456–1462. 5 indexed citations

Маркевич, В. П., А. R. Peaker, B. Hamilton, С. Б. Ластовский, & Л.И. Мурин. (2014). Donor levels of the divacancy-oxygen defect in silicon. Journal of Applied Physics. 115(1). 11 indexed citations

Маркевич, В. П., А. R. Peaker, B. Hamilton, et al.. (2011). Reconfigurations and diffusion of trivacancy in silicon. Physica B Condensed Matter. 407(15). 2974–2977. 2 indexed citations

Khirunenko, Lyudmila I., Mikhail G. Sosnin, Л.И. Мурин, et al.. (2005). Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 261–266. 13 indexed citations

Маркевич, В. П., Л.И. Мурин, С. Б. Ластовский, et al.. (2005). Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 108-109. 273–278. 8 indexed citations

Мурин, Л.И., J. L. Lindström, & A. Misiuk. (2003). Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies. Physica B Condensed Matter. 340-342. 565–569. 4 indexed citations

Маркевич, В. П., Ole Andersen, J.H. Evans–Freeman, et al.. (2001). Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon. Physica B Condensed Matter. 308-310. 513–516. 9 indexed citations

Litvinov, V. V., et al.. (1999). Infrared Vibrational Bands Related to Thermal Donors in Germanium. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 303–308. 2 indexed citations

10.

Маркевич, В. П., M. Suezawa, & Л.И. Мурин. (1999). Interaction of hydrogen (deuterium) molecules with interstitial oxygen atoms in silicon. Materials Science and Engineering B. 58(1-2). 26–30. 10 indexed citations

11.

Маркевич, В. П., Л.И. Мурин, J. L. Lindström, & Masashi Suezawa. (1999). Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 403–408. 2 indexed citations

12.

Мурин, Л.И., В. П. Маркевич, Tomas Hallberg, & J. L. Lindström. (1999). New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 309–314. 11 indexed citations

13.

Hallberg, Tomas, J. L. Lindström, Л.И. Мурин, & В. П. Маркевич. (1997). The Oxygen Dimer in Silicon: Some Experimental Observations. Materials science forum. 258-263. 361–366. 20 indexed citations

14.

Маркевич, В. П. & Л.И. Мурин. (1996). Characteristic features of the initial kinetics of the accumulation of thermal donors in hydrogen-saturated Si crystals. Semiconductors. 30(2). 148–151. 2 indexed citations

15.

Маркевич, В. П., et al.. (1995). Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon. Materials science forum. 196-201. 945–950. 10 indexed citations

16.

Мурин, Л.И., et al.. (1994). Role of field effects in a determination of the concentration of thermal donors in silicon by the DLTS method. Semiconductors. 28(3). 305–309. 1 indexed citations

17.

Мурин, Л.И. & В. П. Маркевич. (1993). Mechanism for suppression of thermal donor generation in silicon by carbon impurity atoms. Semiconductors. 27(2). 108–111. 1 indexed citations

18.

Маркевич, В. П., et al.. (1993). Accelerated formation of thermal donors in hydrogen-saturated Si crystals. Technical Physics Letters. 19(10). 617–618. 1 indexed citations

19.

Маркевич, В. П., Л. Ф. Макаренко, & Л.И. Мурин. (1989). Thermal Donor Formation and Mechanism of Enhanced Oxygen Diffusion in Silicon. Materials science forum. 38-41. 589–594. 5 indexed citations

20.

Маркевич, В. П. & Л.И. Мурин. (1989). Thermal Donor Formation in Pre-Heat-Treated nSi:O Crystals. physica status solidi (a). 111(2). K149–K154. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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