Andrei Mihăilă

1.7k total citations
90 papers, 1.3k citations indexed

About

Andrei Mihăilă is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Andrei Mihăilă has authored 90 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 84 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Andrei Mihăilă's work include Silicon Carbide Semiconductor Technologies (79 papers), Semiconductor materials and devices (45 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). Andrei Mihăilă is often cited by papers focused on Silicon Carbide Semiconductor Technologies (79 papers), Semiconductor materials and devices (45 papers) and Advancements in Semiconductor Devices and Circuit Design (31 papers). Andrei Mihăilă collaborates with scholars based in Switzerland, United Kingdom and Spain. Andrei Mihăilă's co-authors include Giovanni Alfieri, Lasse Vines, Uwe Badstübner, Andrej Kuznetsov, Joel B. Varley, Bengt Svensson, Munaf Rahimo, Renato Amaral Minamisawa, Charalampos Papadopoulos and Umamaheswara Vemulapati and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Industrial Electronics.

In The Last Decade

Andrei Mihăilă

84 papers receiving 1.3k citations

Peers

Andrei Mihăilă

EEE

EOMM

RESE

AMPO

Kui Dang China

Yasuhiro Shirahata Japan

A. Boukortt Algeria

Bo‐Kuai Lai United States

Dong Cui China

Yinong Yin China

Guochen Lin Singapore

Y. Z. Zhang China

Ming‐Wei Lin United States

Rongdi Guo China

Kui Dang China

Andrei Mihăilă

543 ×0.6

EEE

1.2k ×2.4

EOMM

1.0k ×2.0

540 ×1.8

RESE

82 ×0.6

AMPO

Citations per year, relative to Andrei Mihăilă Andrei Mihăilă (= 1×) peers Kui Dang

Countries citing papers authored by Andrei Mihăilă

Since Specialization

Citations

This map shows the geographic impact of Andrei Mihăilă's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrei Mihăilă with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrei Mihăilă more than expected).

Fields of papers citing papers by Andrei Mihăilă

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrei Mihăilă. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrei Mihăilă. The network helps show where Andrei Mihăilă may publish in the future.

Co-authorship network of co-authors of Andrei Mihăilă

This figure shows the co-authorship network connecting the top 25 collaborators of Andrei Mihăilă. A scholar is included among the top collaborators of Andrei Mihăilă based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Andrei Mihăilă. Andrei Mihăilă is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Maresca, Luca, V. Terracciano, Michele Riccio, et al.. (2024). SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 360. 75–80.

Romano, G., et al.. (2023). Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO<sub>2</sub>/ SiN Gate Stack. Materials science forum. 1091. 49–53.

Mihăilă, Andrei, et al.. (2022). Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes. Materials science forum. 1062. 588–592. 2 indexed citations

Soler, Victor, V. Banu, X. Jordà, et al.. (2020). Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(4). 4320–4329. 9 indexed citations

Wirths, Stephan, Enea Bianda, Andrei Mihăilă, et al.. (2020). Threshold Voltage Stability Study on Power SiC MOSFETs Using High-k Dielectrics. 1–8. 1 indexed citations

Wirths, Stephan, Andrei Mihăilă, Marco Bellini, et al.. (2020). Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability. 226–229. 10 indexed citations

Donato, Nazareno, Florin Udrea, Andrei Mihăilă, et al.. (2020). Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout. Warwick Research Archive Portal (University of Warwick). 198–201. 7 indexed citations

Soler, Victor, V. Banu, J. Montserrat, et al.. (2019). Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs. Materials science forum. 963. 768–772. 2 indexed citations

Kuznetsov, Andrej, et al.. (2019). Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures. Journal of Applied Physics. 125(18). 19 indexed citations

10.

Knoll, Lars, Andrei Mihăilă, Lukas Kranz, et al.. (2018). Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs. 9 indexed citations

11.

Kuznetsov, Andrej, B. G. Svensson, Giovanni Alfieri, et al.. (2018). Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3. APL Materials. 7(2). 191 indexed citations

12.

Mihăilă, Andrei, Lars Knoll, Enea Bianda, et al.. (2018). The current status and future prospects of SiC high voltage technology. 19 indexed citations

13.

Hoffmann, Felix, Andrei Mihăilă, Lukas Kranz, Philippe Godignon, & Nando Kaminski. (2018). Long term high temperature reverse bias (HTRB) test on high voltage SiC-JBS-diodes. 10 indexed citations

14.

Soler, Victor, Maxime Berthou, Andrei Mihăilă, et al.. (2017). Planar edge terminations for high voltage 4H-SiC power MOSFETs. Semiconductor Science and Technology. 32(3). 35007–35007. 7 indexed citations

15.

Minamisawa, Renato Amaral, Umamaheswara Vemulapati, Andrei Mihăilă, Charalampos Papadopoulos, & Munaf Rahimo. (2016). Current Sharing Behavior in Si IGBT and SiC MOSFET Cross-Switch Hybrid. IEEE Electron Device Letters. 37(9). 1178–1180. 50 indexed citations

16.

Minamisawa, Renato Amaral, Andrei Mihăilă, V. S. Teodorescu, et al.. (2016). Characterization of a n+3C/n−4H SiC heterojunction diode. Applied Physics Letters. 108(14). 13 indexed citations

17.

Alfieri, Giovanni, Andrei Mihăilă, Hussein M. Ayedh, et al.. (2016). Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes. Materials science forum. 858. 308–311. 3 indexed citations

18.

Mihăilă, Andrei, Renato Amaral Minamisawa, Lars Knoll, et al.. (2016). A novel edge termination for high voltage SiC devices. 223–226. 13 indexed citations

19.

Berthou, Maxime, Philippe Godignon, J.I. Calvo, et al.. (2014). Comparison of 5kV SiC JBS and PiN Diodes. Materials science forum. 778-780. 867–870. 4 indexed citations

20.

Mihăilă, Andrei, Florin Udrea, Philippe Godignon, et al.. (2004). Towards fully integrated SiC cascade power switches for high voltage applications. 389?393. 379–382. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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