Anders Hallén

6.5k total citations
329 papers, 5.5k citations indexed

About

Anders Hallén is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, Anders Hallén has authored 329 papers receiving a total of 5.5k indexed citations (citations by other indexed papers that have themselves been cited), including 273 papers in Electrical and Electronic Engineering, 79 papers in Computational Mechanics and 77 papers in Materials Chemistry. Recurrent topics in Anders Hallén's work include Silicon Carbide Semiconductor Technologies (171 papers), Semiconductor materials and devices (149 papers) and Silicon and Solar Cell Technologies (85 papers). Anders Hallén is often cited by papers focused on Silicon Carbide Semiconductor Technologies (171 papers), Semiconductor materials and devices (149 papers) and Silicon and Solar Cell Technologies (85 papers). Anders Hallén collaborates with scholars based in Sweden, Norway and United States. Anders Hallén's co-authors include B. G. Svensson, Margareta K. Linnarsson, B. Sundqvist, Yanwen Zhang, Muhammad Usman, C. Jagadish, Andrej Kuznetsov, Bengt Svensson, Martin S. Janson and Niclas Keskitalo and has published in prestigious journals such as SHILAP Revista de lepidopterología, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Anders Hallén

317 papers receiving 5.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Anders Hallén Sweden 40 4.2k 1.6k 1.1k 1.1k 611 329 5.5k
B. G. Svensson Sweden 39 4.3k 1.0× 1.3k 0.8× 1.2k 1.1× 1.1k 1.0× 344 0.6× 294 4.9k
E. A. Irene United States 41 4.6k 1.1× 2.7k 1.6× 1.3k 1.2× 568 0.5× 540 0.9× 215 5.8k
O. W. Holland United States 36 3.9k 0.9× 1.6k 1.0× 1.1k 1.0× 1.6k 1.4× 486 0.8× 172 4.8k
W. Wesch Germany 33 3.2k 0.8× 2.0k 1.2× 921 0.8× 2.1k 1.9× 294 0.5× 251 4.6k
V. Raineri Italy 43 4.6k 1.1× 2.3k 1.4× 2.5k 2.2× 812 0.7× 760 1.2× 319 6.1k
G. E. Jellison United States 15 2.5k 0.6× 2.1k 1.3× 502 0.4× 295 0.3× 484 0.8× 44 3.6k
Zejun Ding China 34 2.4k 0.6× 1.9k 1.1× 821 0.7× 266 0.2× 375 0.6× 292 4.4k
W. Beyer Germany 39 4.2k 1.0× 3.9k 2.3× 582 0.5× 315 0.3× 278 0.5× 227 5.1k
E. Cartier United States 47 8.6k 2.1× 3.1k 1.9× 1.3k 1.2× 360 0.3× 781 1.3× 194 9.5k
S. T. Picraux United States 42 4.5k 1.1× 2.8k 1.7× 2.0k 1.8× 1.0k 0.9× 1.0k 1.7× 165 6.8k

Countries citing papers authored by Anders Hallén

Since Specialization
Citations

This map shows the geographic impact of Anders Hallén's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anders Hallén with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anders Hallén more than expected).

Fields of papers citing papers by Anders Hallén

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anders Hallén. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anders Hallén. The network helps show where Anders Hallén may publish in the future.

Co-authorship network of co-authors of Anders Hallén

This figure shows the co-authorship network connecting the top 25 collaborators of Anders Hallén. A scholar is included among the top collaborators of Anders Hallén based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Anders Hallén. Anders Hallén is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Azarov, Alexander, et al.. (2024). Er:LiNbO3 Quantum Memory Platform Optimized with Dynamic Defect Annealing. Advanced Optical Materials. 12(36).
3.
Afzal, Shahbaz, et al.. (2024). Ion Implantation‐Induced Bandgap Modifications in the ALD TiO2 Thin Films. physica status solidi (a). 222(12). 2 indexed citations
4.
Radamson, Henry H., Anders Hallén, Ilya Sychugov, & Alexander Azarov. (2023). Analytical Methods and Instruments for Micro- and Nanomaterials. 64 indexed citations
5.
Hallén, Anders, et al.. (2023). Carrier removal rates in 4H–SiC power diodes – A predictive analytical model. Materials Science in Semiconductor Processing. 167. 107771–107771. 6 indexed citations
6.
Hallén, Anders, et al.. (2023). Proton Irradiation‐Induced Displacement Damage in 650 V Si and SiC Power Diodes. physica status solidi (a). 220(21). 3 indexed citations
7.
Ayedh, Hussein M., et al.. (2021). Carbon vacancy control in p + -n silicon carbide diodes for high voltage bipolar applications. Journal of Physics D Applied Physics. 54(45). 455106–455106. 3 indexed citations
8.
Linnarsson, Margareta K., Lasse Vines, & Anders Hallén. (2021). Influence from the electronic shell structure on the range distribution during channeling of 40–300 keV ions in 4H-SiC. Journal of Applied Physics. 130(7). 13 indexed citations
9.
Usman, Muhammad, et al.. (2020). Comparative study of proton and helium elastic scatterings from nitrogen in GaN. Materials Science in Semiconductor Processing. 121. 105362–105362. 1 indexed citations
10.
Portavoce, A., Marion Descoins, K. Hoummada, et al.. (2020). Ge(Sn) growth on Si(001) by magnetron sputtering. Materials Today Communications. 26. 101915–101915. 14 indexed citations
11.
Linnarsson, Margareta K., Anders Hallén, & Lasse Vines. (2019). Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC. Semiconductor Science and Technology. 34(11). 115006–115006. 14 indexed citations
12.
Azarov, Alexander, et al.. (2019). Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution. Journal of Applied Physics. 125(7). 7 indexed citations
13.
Usman, Muhammad, et al.. (2018). Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS. Journal of Physics D Applied Physics. 51(10). 105111–105111. 30 indexed citations
14.
Lanni, Luigia, et al.. (2017). Total Dose Effects on 4H-SiC Bipolar Junction Transistors. Materials science forum. 897. 579–582. 2 indexed citations
15.
Linnarsson, Margareta K., et al.. (2017). Interface between Al2O3and 4H-SiC investigated by time-of-flight medium energy ion scattering. Journal of Physics D Applied Physics. 50(49). 495111–495111. 6 indexed citations
16.
Salemi, Arash, Hossein Elahipanah, Benedetto Buono, et al.. (2015). Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes. 269–272. 15 indexed citations
17.
Nipoti, Roberta, et al.. (2012). Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC. Journal of materials research/Pratt's guide to venture capital sources. 28(1). 17–22. 36 indexed citations
18.
Linnarsson, M. K., et al.. (2012). New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector. Review of Scientific Instruments. 83(9). 95107–95107. 60 indexed citations
19.
Sychugov, Ilya, Niklas Elfström, Anders Hallén, Jan Linnros, & Min Qiu. (2007). Effect of photonic bandgap on luminescence from silicon nanocrystals. Optics Letters. 32(13). 1878–1878. 8 indexed citations
20.
Hallén, Anders, et al.. (2005). The European Statement of Principles on Human Machine Interaction 2005. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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