Giovanni Alfieri

2.0k total citations
99 papers, 1.6k citations indexed

About

Giovanni Alfieri is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Giovanni Alfieri has authored 99 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 81 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in Giovanni Alfieri's work include Silicon Carbide Semiconductor Technologies (67 papers), Semiconductor materials and devices (66 papers) and Semiconductor materials and interfaces (18 papers). Giovanni Alfieri is often cited by papers focused on Silicon Carbide Semiconductor Technologies (67 papers), Semiconductor materials and devices (66 papers) and Semiconductor materials and interfaces (18 papers). Giovanni Alfieri collaborates with scholars based in Switzerland, Japan and Norway. Giovanni Alfieri's co-authors include Tsunenobu Kimoto, Andrei Mihăilă, B. G. Svensson, Edouard V. Monakhov, Lasse Vines, Andrej Kuznetsov, Uwe Badstübner, Joel B. Varley, Bengt Svensson and Anders Hallén and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Giovanni Alfieri

95 papers receiving 1.5k citations

Peers

Giovanni Alfieri
Tamara Isaacs‐Smith United States
David C. Hays United States
V. Grivickas Lithuania
Anton Geiler United States
Giovanni Alfieri
Citations per year, relative to Giovanni Alfieri Giovanni Alfieri (= 1×) peers Takashi Shinohe

Countries citing papers authored by Giovanni Alfieri

Since Specialization
Citations

This map shows the geographic impact of Giovanni Alfieri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Giovanni Alfieri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Giovanni Alfieri more than expected).

Fields of papers citing papers by Giovanni Alfieri

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Giovanni Alfieri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Giovanni Alfieri. The network helps show where Giovanni Alfieri may publish in the future.

Co-authorship network of co-authors of Giovanni Alfieri

This figure shows the co-authorship network connecting the top 25 collaborators of Giovanni Alfieri. A scholar is included among the top collaborators of Giovanni Alfieri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Giovanni Alfieri. Giovanni Alfieri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Loglio, Alessandro, Giovanni Alfieri, Tiziana Negri, et al.. (2025). COVID-19 Vaccine Perception in Liver Transplant Recipients: Patient-Reported Outcomes and Real-Life Experience from the Bergamo Center. Vaccines. 13(5). 455–455.
2.
Alfieri, Giovanni, Sami Bolat, & Roberta Nipoti. (2024). The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes. Journal of Applied Physics. 135(23). 2 indexed citations
3.
Alfieri, Giovanni, et al.. (2023). An ab initio study of the electronic properties of helium in wurtzite gallium nitride. Semiconductor Science and Technology. 38(7). 74003–74003. 1 indexed citations
4.
Alfieri, Giovanni, et al.. (2023). Time-correlated luminescence blinking in InGaN single quantum wells. Applied Physics Letters. 122(17).
5.
Wirths, Stephan, Andrei Mihăilă, Marco Bellini, et al.. (2020). Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability. 226–229. 10 indexed citations
6.
Alfieri, Giovanni, et al.. (2019). Deep level study of beryllium implanted MOCVD homoepitaxial GaN. Japanese Journal of Applied Physics. 58(SC). SCCB04–SCCB04. 4 indexed citations
7.
Alfieri, Giovanni, et al.. (2019). Defect energy levels in carbon implanted n-type homoepitaxial GaN. Journal of Applied Physics. 126(12). 7 indexed citations
8.
Kuznetsov, Andrej, et al.. (2019). Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures. Journal of Applied Physics. 125(18). 19 indexed citations
9.
Alfieri, Giovanni, et al.. (2018). The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC. Journal of Applied Physics. 123(17). 3 indexed citations
10.
Kuznetsov, Andrej, B. G. Svensson, Giovanni Alfieri, et al.. (2018). Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3. APL Materials. 7(2). 191 indexed citations
11.
Alfieri, Giovanni. (2018). The Effects of Radial Compression on the Electronic Properties and Hydrogen Adsorption of SiC Nanotubes. physica status solidi (b). 255(10). 1 indexed citations
12.
Mihăilă, Andrei, Lars Knoll, Enea Bianda, et al.. (2018). The current status and future prospects of SiC high voltage technology. 19 indexed citations
13.
Nipoti, Roberta, A. Parisini, Giovanni Alfieri, et al.. (2016). 1950°C Annealing of Al<sup>+</sup> Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time. Materials science forum. 858. 523–526. 2 indexed citations
14.
Alfieri, Giovanni, Andrei Mihăilă, Hussein M. Ayedh, et al.. (2016). Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes. Materials science forum. 858. 308–311. 3 indexed citations
15.
Mihăilă, Andrei, Renato Amaral Minamisawa, Lars Knoll, et al.. (2016). A novel edge termination for high voltage SiC devices. 223–226. 13 indexed citations
16.
Alfieri, Giovanni & Tsunenobu Kimoto. (2011). Ab initiostudy of isolated chlorine defects in cubic SiC. Journal of Physics Condensed Matter. 23(41). 415802–415802. 4 indexed citations
17.
Alfieri, Giovanni & Tsunenobu Kimoto. (2011). Structural stability and electronic properties of SiC nanocones: First-principles calculations and symmetry considerations. Applied Physics Letters. 98(12). 8 indexed citations
18.
Sasaki, S., Kota Kawahara, Feng Ge, Giovanni Alfieri, & Tsunenobu Kimoto. (2011). Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC. Journal of Applied Physics. 109(1). 41 indexed citations
19.
Alfieri, Giovanni & Tsunenobu Kimoto. (2009). The structural and electronic properties of chiral SiC nanotubes: a hybrid density functional study. Nanotechnology. 20(28). 285703–285703. 20 indexed citations
20.
David, Marie‐Laure, Giovanni Alfieri, Anders Hallén, et al.. (2004). Electrically active defects in irradiated 4H-SiC. Journal of Applied Physics. 95(9). 4728–4733. 83 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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