P. Delescluse

913 total citations
29 papers, 655 citations indexed

About

P. Delescluse is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Atmospheric Science. According to data from OpenAlex, P. Delescluse has authored 29 papers receiving a total of 655 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Atomic and Molecular Physics, and Optics, 23 papers in Electrical and Electronic Engineering and 2 papers in Atmospheric Science. Recurrent topics in P. Delescluse's work include Semiconductor Quantum Structures and Devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Quantum and electron transport phenomena (12 papers). P. Delescluse is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Quantum and electron transport phenomena (12 papers). P. Delescluse collaborates with scholars based in France, United States and Germany. P. Delescluse's co-authors include M. Laviron, Nuyen T. Linh, D. Delagebeaudeuf, J. Chaplart, P. Étienne, R. J. Higgins, Randal K. Goodall, J.P. Harrang, J. Massies and Joël Chevrier and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

P. Delescluse

28 papers receiving 583 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Delescluse France	15	545	450	142	104	36	29	655
C.-L. Chen United States	5	448 0.8×	516 1.1×	103 0.7×	109 1.0×	26 0.7×	9	602
D. C. Walters United States	8	366 0.7×	345 0.8×	74 0.5×	112 1.1×	24 0.7×	17	456
Avid Kamgar United States	15	460 0.8×	517 1.1×	87 0.6×	168 1.6×	49 1.4×	43	751
H. M. Macksey United States	14	370 0.7×	466 1.0×	115 0.8×	71 0.7×	12 0.3×	51	543
G. Poiblaud France	10	362 0.7×	364 0.8×	91 0.6×	117 1.1×	42 1.2×	13	509
R. E. Doezema United States	19	682 1.3×	283 0.6×	195 1.4×	172 1.7×	38 1.1×	52	757
J.P. Hirtz France	15	645 1.2×	616 1.4×	105 0.7×	126 1.2×	28 0.8×	58	764
J. Komeno Japan	17	586 1.1×	550 1.2×	117 0.8×	192 1.8×	21 0.6×	60	727
Bob Wilson	2	455 0.8×	455 1.0×	76 0.5×	109 1.0×	36 1.0×	4	570
O. G. Lorimor United States	13	481 0.9×	473 1.1×	132 0.9×	138 1.3×	37 1.0×	31	638

Countries citing papers authored by P. Delescluse

Since Specialization

Citations

This map shows the geographic impact of P. Delescluse's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Delescluse with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Delescluse more than expected).

Fields of papers citing papers by P. Delescluse

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Delescluse. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Delescluse. The network helps show where P. Delescluse may publish in the future.

Co-authorship network of co-authors of P. Delescluse

This figure shows the co-authorship network connecting the top 25 collaborators of P. Delescluse. A scholar is included among the top collaborators of P. Delescluse based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Delescluse. P. Delescluse is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Sauvage, M., C. Delalande, P. Voisin, P. Étienne, & P. Delescluse. (1986). Evaluation of Al1−xInxAs-GaAs strained layer superlattices by X-Ray diffractometry and excitation spectroscopy. Surface Science. 174(1-3). 573–578. 2 indexed citations

Martin, K. P., et al.. (1986). Quantized Hall effect in gated AlGaAs/GaAs heterostructures: Localization as a function of number density and magnetic field. Solid State Communications. 59(10). 691–695. 3 indexed citations

Delagebeaudeuf, D., et al.. (1986). Design of TEGFET devices for optimum low-noise high-frequency operation. IEEE Transactions on Electron Devices. 33(5). 590–594. 11 indexed citations

Chevrier, Joël, et al.. (1986). Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's. IEEE Transactions on Electron Devices. 33(7). 934–937. 14 indexed citations

Massies, J., et al.. (1985). Electron spectroscopy of vacuum annealing effects on surfaces of some binary and ternary III–V semiconductors. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(2). 613–616. 17 indexed citations

Harrang, J.P., et al.. (1985). Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction. Physical review. B, Condensed matter. 32(12). 8126–8135. 173 indexed citations

Harrang, J.P., et al.. (1985). Charge control and geometric magnetoresistance of a gated AlGaAs/GaAs heterojunction transistor. Journal of Applied Physics. 58(11). 4431–4437. 7 indexed citations

Laviron, M., et al.. (1985). Ultra low noise and high frequency operation of TEGFETS made by MBE. Physica B+C. 129(1-3). 376–379. 3 indexed citations

Laviron, M., et al.. (1984). IIIA-1 Ultralow-noise and high-frequency operation of TEGFET's made by molecular-beam epitaxy. IEEE Transactions on Electron Devices. 31(12). 1967–1967. 3 indexed citations

10.

Voisin, P., Y. Guldner, J. P. Vieren, et al.. (1983). \nElectron-mobility and landau-level width in modulation-doped GaAs-AlxGa1-xAs heterojunctions. Radboud Repository (Radboud University). 3 indexed citations

11.

Massies, J., et al.. (1983). Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxy. Journal of Crystal Growth. 64(1). 101–107. 23 indexed citations

12.

Rey, G., et al.. (1983). Monolithic Microwave Amplifier using a Two-Dimensional Electron Gas F.E.T. a Comparison with GaAs. 20–23.

13.

Laviron, M., D. Delagebeaudeuf, P. Delescluse, et al.. (1982). Low noise normally on and normally off two-dimensional electron gas field-effect transistors. Applied Physics Letters. 40(6). 530–532. 19 indexed citations

14.

Delagebeaudeuf, D., et al.. (1982). Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential. Electronics Letters. 18(2). 103–105. 14 indexed citations

15.

Delagebeaudeuf, D., P. Delescluse, P. Étienne, et al.. (1982). Tunnelling through GaAs-Al _x Ga _{1− x} As-GaAs double heterojunctions. Electronics Letters. 18(2). 85–87. 23 indexed citations

16.

Delescluse, P., et al.. (1982). High-speed low-power DCFL using planar two-dimensional electron gas FET technology. Electronics Letters. 18(12). 517–519. 23 indexed citations

17.

Massies, J., P. Delescluse, P. Étienne, & Nuyen T. Linh. (1982). The growth of silver on GaAs{001}: Epitaxial relationships, mode of growth and interfacial diffusion. Thin Solid Films. 90(1). 113–118. 24 indexed citations

18.

Delescluse, P., M. Laviron, J. Chaplart, D. Delagebeaudeuf, & Nuyen T. Linh. (1981). Transport properties in GaAs-Al _x Ga _{1− x} As heterostructures and MESFET application. Electronics Letters. 17(10). 342–344. 29 indexed citations

19.

Voisin, P., et al.. (1981). Cyclotron resonance linewidth in selectively doped GaAs-AlxGa1−xAs heterojunctions. Applied Physics Letters. 39(12). 982–984. 36 indexed citations

20.

Delescluse, P. & A. Masson. (1980). Diffuse scattering in RHEED induced by linear disorders of sulphur segregated on nickel (111) surface. Surface Science. 100(2). 423–438. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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