J.P. Hirtz

999 total citations
58 papers, 764 citations indexed

About

J.P. Hirtz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, J.P. Hirtz has authored 58 papers receiving a total of 764 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 45 papers in Atomic and Molecular Physics, and Optics and 12 papers in Condensed Matter Physics. Recurrent topics in J.P. Hirtz's work include Semiconductor Quantum Structures and Devices (38 papers), Semiconductor Lasers and Optical Devices (17 papers) and Semiconductor materials and devices (14 papers). J.P. Hirtz is often cited by papers focused on Semiconductor Quantum Structures and Devices (38 papers), Semiconductor Lasers and Optical Devices (17 papers) and Semiconductor materials and devices (14 papers). J.P. Hirtz collaborates with scholars based in France, United States and Portugal. J.P. Hirtz's co-authors include Manijeh Razeghi, T. P. Pearsall, M. Voos, P. Maurel, J.P. Duchemin, Y. Guldner, J. P. Vieren, Muriel Bonnet, S. D. Hersee and Jean-Pierre Landesman and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J.P. Hirtz

49 papers receiving 685 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.P. Hirtz France	15	645	616	126	105	61	58	764
E. D. Beebe United States	14	662 1.0×	634 1.0×	97 0.8×	117 1.1×	59 1.0×	30	843
T. P. Chin United States	16	555 0.9×	581 0.9×	153 1.2×	120 1.1×	85 1.4×	62	715
J. L. de Miguel United States	16	704 1.1×	663 1.1×	235 1.9×	69 0.7×	43 0.7×	39	842
H. M. Cox United States	17	665 1.0×	692 1.1×	189 1.5×	158 1.5×	83 1.4×	53	931
Bob Wilson	2	455 0.7×	455 0.7×	109 0.9×	76 0.7×	38 0.6×	4	570
R. E. Mallard Canada	12	390 0.6×	438 0.7×	122 1.0×	86 0.8×	44 0.7×	38	524
Avid Kamgar United States	15	460 0.7×	517 0.8×	168 1.3×	87 0.8×	35 0.6×	43	751
H. Kanbe Japan	17	493 0.8×	597 1.0×	83 0.7×	42 0.4×	71 1.2×	52	710
W. T. Dietze United States	14	438 0.7×	446 0.7×	134 1.1×	52 0.5×	38 0.6×	32	552
J.P. Duchemin France	19	895 1.4×	900 1.5×	155 1.2×	110 1.0×	62 1.0×	56	1.1k

Countries citing papers authored by J.P. Hirtz

Since Specialization

Citations

This map shows the geographic impact of J.P. Hirtz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.P. Hirtz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.P. Hirtz more than expected).

Fields of papers citing papers by J.P. Hirtz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.P. Hirtz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.P. Hirtz. The network helps show where J.P. Hirtz may publish in the future.

Co-authorship network of co-authors of J.P. Hirtz

This figure shows the co-authorship network connecting the top 25 collaborators of J.P. Hirtz. A scholar is included among the top collaborators of J.P. Hirtz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.P. Hirtz. J.P. Hirtz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Garabédian, P., et al.. (2010). Reliable pulsed-operation of 1064-nm wavelength-stabilized diode lasers at high-average-power: boosting fiber lasers from the seed. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7580. 758025–758025.

Laruelle, François, et al.. (2008). High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6876. 68760P–68760P. 21 indexed citations

Laruelle, François, et al.. (2007). High Brightness Single-Mode 1060-nm Diode Lasers for Demanding Industrial Applications. 1–1. 5 indexed citations

Andrianov, A. V., John Orton, T.M. Benson, et al.. (2000). Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes. Journal of Applied Physics. 87(7). 3227–3233. 26 indexed citations

Landesman, Jean-Pierre, et al.. (1999). Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes. Applied Physics Letters. 75(17). 2521–2523. 33 indexed citations

Duchemin, J.P., et al.. (1996). Auto-Stacking of High Power Laser Diode Arrays a Cost-Effective Approach for Delivering 10 Kw/cm². 132–132. 1 indexed citations

Maurel, P., et al.. (1993). High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses. MRS Proceedings. 300. 4 indexed citations

Maurel, P., et al.. (1993). Room temperature 600 mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE. Electronics Letters. 29(1). 91–93. 14 indexed citations

Gosselin, S., Jean-Paul Pocholle, J. P. Schnell, et al.. (1992). Two-wavelength MQW vertical-cavity surface-emitting laser. Conference on Lasers and Electro-Optics.

10.

Maurel, P., et al.. (1991). Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties. Journal of Crystal Growth. 111(1-4). 578–583. 19 indexed citations

11.

Charasse, M. N., B. Bartenlian, Bruno Gérard, et al.. (1989). 12 GHz High Power GaAs/Si MESFETs. Japanese Journal of Applied Physics. 28(11A). L1896–L1896. 12 indexed citations

12.

Galtier, Pierre, Jean-Paul Pocholle, M. N. Charasse, et al.. (1989). 1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy. Applied Physics Letters. 55(20). 2105–2107. 37 indexed citations

13.

Charasse, M. N., Pierre Galtier, A. M. Huber, et al.. (1988). Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE. Electronics Letters. 24(23). 1458–1460. 9 indexed citations

14.

Charasse, M. N., A. Georgakilas, E. Barbier, et al.. (1988). MBE growth of GaAs on Si at Thomson. 2 indexed citations

15.

Guldner, Y., M. Voos, J. P. Vieren, J.P. Hirtz, & M. Heiblum. (1987). Microwave photoresistivity of a two-dimensional electron gas and the fractional quantum Hall effect. Physical review. B, Condensed matter. 36(2). 1266–1268. 5 indexed citations

16.

Guldner, Y., J. P. Vieren, M. Voos, et al.. (1986). Quantum Hall effect inIn0.53Ga0.47As-InP heterojunctions with two populated electric subbands. Physical review. B, Condensed matter. 33(6). 3990–3993. 36 indexed citations

17.

Razeghi, Manijeh, J.P. Hirtz, U.O. Ziemelis, et al.. (1983). Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition. Applied Physics Letters. 43(6). 585–587. 77 indexed citations

18.

Duchemin, J.P., J.P. Hirtz, Manijeh Razeghi, Muriel Bonnet, & S. D. Hersee. (1981). GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications. Journal of Crystal Growth. 55(1). 64–73. 54 indexed citations

19.

Hirtz, J.P., et al.. (1981). Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE. Electronics Letters. 17(3). 113–115. 7 indexed citations

20.

Hirtz, J.P., et al.. (1980). Growth of Ga _0.47 In _0.53 As on InP by low-pressure m.o. c.v.d.. Electronics Letters. 16(11). 415–416. 14 indexed citations

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