J. Hallais

1.0k citations

26 papers · 824 indexed · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Surfaces, Coatings and Films 5
- Electron and X-Ray Spectroscopy Techniques 5
Atomic and Molecular Physics, and Optics 15
- Semiconductor Quantum Structures and Devices 14
- Semiconductor materials and interfaces 4

Co-authors: Guy Jacob G. Poiblaud J. Farges G. M. Martin R. Madar J. P. André F. Hottier R. Fruchart
Journals: Journal of Crystal Growth (8 papers)Journal of Applied Physics (4 papers)Applied Surface Science (1 paper)Applied Physics Letters (1 paper)Journal of Radioanalytical and Nuclear Chemistry (1 paper)
Partner nations: France Netherlands Finland

In The Last Decade

J. Hallais

26 papers receiving 711 citations

Peers

Countries citing papers authored by J. Hallais

Since Specialization

Citations

This map shows the geographic impact of J. Hallais's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Hallais with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Hallais more than expected).

Fields of papers citing papers by J. Hallais

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Hallais. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Hallais. The network helps show where J. Hallais may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Hallais, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Hallais Line = papers co-authored together J. Hallais links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Round robin investigation of silicon oxide on silicon reference materials for ellipsometry Applied Surface Science ·Jan Vanhellemont, H.E. Maes, Marc Schaekers, A. Armigliato, H. Cerva, A.G. Cullis, Philip Muller, Norbet Berndt, J. Hallais, Fanyue Meng, C. Pickering, D.G. Drozdov, J. van Landuyt, Ю П Семенов, H. W. Werner, P. Salieri	1993	12
2	Cyclotron resonance from the far-infrared transmission and the photoconductivity of a two-dimensional electron gas in a GaAs/AlGaAs heterojunction Solid State Communications ·RT Horstman, Ourmaan Nezami-Nargabad, J. H. Wolter, R. W. van der Heijden, G. L. J. A. Rikken, H. Sigg, P. Frijlink, William D. Harlan, J. Hallais	1984	22
3	ELIMINATION OF DISLOCATIONS IN GaAs SINGLE CRYSTALS Le Journal de Physique Colloques ·M. Duseaux, Le Lourd R, Lindsey C. Tear, Jean‐Pierre Chevalier, J. Hallais	1983	1
4	Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy Journal of Applied Physics ·D. Grande-Can, A. Brière, J. Hallais, A.T. Vink, Hendrik Veenvliet	1982	30
5	Dislocations in GaAs Journal of Crystal Growth ·Guy Jacob, J. Farges, Luis E. Perez Monjaras, M. Duseaux, J. Hallais, W. Bartels, P.J. Roksnoer	1982	34
6	GaAs photocathodes for low light level imaging Journal of Crystal Growth ·J. P. André, Michal Held, J. Hallais, Chunzhang Wang	1981	37
7	Growth monitoring and characterization of (Al, Ga)As-GaAs heterostructures by ellipsometry Journal of Crystal Growth ·Anna Kortesoja, F. Hottier, J. Hallais	1981	5
8	Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPE Journal of Electronic Materials ·J. Hallais, J. P. André, D. Grande-Can, Mario Narravo, Jinfan Yang, Federico Esposito, A.T. Vink	1981	25
9	Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry Revue de Physique Appliquée ·Anna Kortesoja, F. Hottier, J. Hallais	1981	17
10	Characterization of Semiconductor Materials by Charged Particle Activation IEEE Transactions on Nuclear Science ·G. Blondiaux, Emiy Dwi Hadistia Nim. E, Н.Н. Логинова, M. Valladon, J.L. Debrun, J. Hallais, A. M. Huber	1981	5
11	I n s i t u monitoring by ellipsometry of metalorganic epitaxy of GaAlAs-GaAs superlattice Journal of Applied Physics ·F. Hottier, J. Hallais, 茂吉田	1980	18
12	The use of GaAs—(Ga, Al)As heterostructures for FET devices IEEE Transactions on Electron Devices ·Staci DeMaio, J. P. André, Olav Bleivik Wist, J. Hallais	1980	12
13	Contribution of activation analysis with low energy charged particles to studies on GaAs Journal of Radioanalytical and Nuclear Chemistry ·M. Valladon, G. Blondiaux, Н.Н. Логинова, J. Hallais, G. Poiblaud, A. M. Huber, J.L. Debrun	1980	13
14	Ellipsometric assessment of (Ga, Al) As/GaAs epitaxial layers during their growth in an organometallic VPE system Journal of Crystal Growth ·J. B. Theeten, F. Hottier, J. Hallais	1979	29
15	Study of the main electron trap inGa1−xInxAsalloys Physical review. B, Solid state ·A. Mircéa, A. Mitonneau, J. Hallais, M. Jaroš	1977	57
16	Device Quality GaAs Grown at Low Temperature by the Halide Process Journal of The Electrochemical Society ·J. Hallais, Staci DeMaio, Sameer S. Chaudhari, J.M. Durand, L. Hollan	1977	8
17	High pressure solution growth of GaN Journal of Crystal Growth ·R. Madar, Guy Jacob, J. Hallais, R. Fruchart	1975	104
18	Heteroepitaxial growth of GaP on silicon Journal of Crystal Growth ·J. P. André, J. Hallais, N. Sambo	1975	36
19	Vapour epitaxial growth and characterization of InAs1-P Journal of Crystal Growth ·J. Hallais, Luis E. Perez Monjaras, E. Fabre	1972	5
20	Interface study in epitaxial vapour grown GaAs Journal of Crystal Growth ·L. Hollan, J. Hallais, N. Sambo	1971	6

About J. Hallais

J. Hallais is a scholar working on Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Radiation and Electrical and Electronic Engineering, having authored 26 papers that have together received 824 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (6 papers), Advanced Semiconductor Detectors and Materials (6 papers), Electron and X-Ray Spectroscopy Techniques (5 papers), GaN-based semiconductor devices and materials (5 papers), Semiconductor materials and interfaces (4 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and Ion-surface interactions and analysis (3 papers). The work is most often cited by research in Condensed Matter Physics (210 citations), Atomic and Molecular Physics, and Optics (495 citations), Surfaces, Coatings and Films (74 citations), Electrical and Electronic Engineering (567 citations) and Materials Chemistry (212 citations). J. Hallais has collaborated with scholars based in France, Netherlands and Finland. Frequent co-authors include Guy Jacob, G. Poiblaud, J. Farges, G. M. Martin, R. Madar, J. P. André, F. Hottier, R. Fruchart, A. Mitonneau and A. Mircéa. Their work appears in journals such as Journal of Crystal Growth, Journal of Applied Physics, Applied Surface Science, Applied Physics Letters and Journal of Radioanalytical and Nuclear Chemistry.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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