H. G. Grimmeiss

1.5k total citations
45 papers, 1.1k citations indexed

About

H. G. Grimmeiss is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. G. Grimmeiss has authored 45 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in H. G. Grimmeiss's work include Semiconductor materials and devices (19 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor materials and interfaces (17 papers). H. G. Grimmeiss is often cited by papers focused on Semiconductor materials and devices (19 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor materials and interfaces (17 papers). H. G. Grimmeiss collaborates with scholars based in Sweden, Germany and United Kingdom. H. G. Grimmeiss's co-authors include Lars Samuelson, P. Omling, M. Kleverman, Erik Janzén, É. A. Steinman, R. Memming, V. V. Kveder, С. А. Шевченко, L. Ledebo and G. A. Northrop and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

H. G. Grimmeiss

45 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. G. Grimmeiss Sweden 19 882 771 374 104 83 45 1.1k
Satoshi Komiya Japan 16 617 0.7× 501 0.6× 312 0.8× 103 1.0× 60 0.7× 80 894
Hisao Nakashima Japan 19 965 1.1× 1.0k 1.3× 333 0.9× 148 1.4× 134 1.6× 116 1.3k
J. Weber Germany 19 842 1.0× 681 0.9× 615 1.6× 107 1.0× 69 0.8× 52 1.2k
A. M. Huber France 12 634 0.7× 554 0.7× 168 0.4× 102 1.0× 75 0.9× 34 834
Yoshifumi Mori Japan 17 739 0.8× 632 0.8× 297 0.8× 38 0.4× 128 1.5× 46 871
A. Nouailhat France 17 662 0.8× 602 0.8× 241 0.6× 40 0.4× 83 1.0× 90 950
M. Heyen Germany 15 614 0.7× 565 0.7× 189 0.5× 41 0.4× 151 1.8× 37 772
P. Fṙanzosi Italy 13 478 0.5× 488 0.6× 221 0.6× 55 0.5× 49 0.6× 92 701
R. A. Faulkner United States 11 676 0.8× 904 1.2× 377 1.0× 54 0.5× 140 1.7× 12 1.1k
M. Bensoussan France 19 598 0.7× 449 0.6× 604 1.6× 94 0.9× 42 0.5× 41 1.1k

Countries citing papers authored by H. G. Grimmeiss

Since Specialization
Citations

This map shows the geographic impact of H. G. Grimmeiss's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. G. Grimmeiss with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. G. Grimmeiss more than expected).

Fields of papers citing papers by H. G. Grimmeiss

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. G. Grimmeiss. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. G. Grimmeiss. The network helps show where H. G. Grimmeiss may publish in the future.

Co-authorship network of co-authors of H. G. Grimmeiss

This figure shows the co-authorship network connecting the top 25 collaborators of H. G. Grimmeiss. A scholar is included among the top collaborators of H. G. Grimmeiss based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. G. Grimmeiss. H. G. Grimmeiss is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grimmeiss, H. G.. (1999). Silicon-germanium—a promise into the future?. Semiconductors. 33(9). 939–941. 20 indexed citations
2.
Jia, Yifan & H. G. Grimmeiss. (1996). Metastable states of Si donors in AlxGa1−xAs. Journal of Applied Physics. 80(8). 4395–4399. 2 indexed citations
3.
Jia, Yifan, Zhongdong Han, H. G. Grimmeiss, & L. Dobaczewski. (1996). Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices. Journal of Applied Physics. 80(5). 2860–2865. 3 indexed citations
4.
Jia, Yifan & H. G. Grimmeiss. (1994). Electrical field dependence of the emission properties of DX-related centres in AlGaAs. Semiconductor Science and Technology. 9(4). 356–363. 4 indexed citations
5.
Jia, Yifan & H. G. Grimmeiss. (1993). Field dependence of emission and capture rates ofDX-related centers inAlxGa1−xAs. Physical review. B, Condensed matter. 47(4). 1858–1865. 13 indexed citations
6.
Grimmeiss, H. G., et al.. (1992). Electrical characterization of SiGe heterostructure bipolar transistors. Thin Solid Films. 222(1-2). 154–156. 5 indexed citations
7.
Watkins, G. D., et al.. (1991). Structure of gold in silicon. Physical Review Letters. 67(9). 1149–1152. 42 indexed citations
8.
Grimmeiss, H. G., Lars Montelius, & K. Larsson. (1988). Chalcogens in germanium. Physical review. B, Condensed matter. 37(12). 6916–6928. 31 indexed citations
9.
Kleverman, M., et al.. (1988). Further evidence for theC-line pseudodonor model in irradiated Czochralski-grown silicon. Physical review. B, Condensed matter. 37(17). 10199–10202. 8 indexed citations
10.
Mooney, P. M., G. A. Northrop, T. N. Morgan, & H. G. Grimmeiss. (1988). Evidence for large lattice relaxation at theDXcenter in Si-dopedAlxGa1−xAs. Physical review. B, Condensed matter. 37(14). 8298–8307. 92 indexed citations
11.
Bergman, K., G. Grossmann, H. G. Grimmeiss, et al.. (1988). Tuning the interaction between spin-singlet and spin-triplet states of double donors with stress. Physical review. B, Condensed matter. 37(18). 10738–10745. 3 indexed citations
12.
Larsson, Krister & H. G. Grimmeiss. (1988). Optical studies on the electric field dependence of excited donor states in silicon. Journal of Applied Physics. 63(9). 4524–4529. 1 indexed citations
13.
Kleverman, M. & H. G. Grimmeiss. (1986). Absorption studies of beryllium-doped silicon. Semiconductor Science and Technology. 1(1). 45–48. 9 indexed citations
14.
Kleverman, M., K. Bergman, & H. G. Grimmeiss. (1986). Photothermal investigations of magnesium-related donors in silicon. Semiconductor Science and Technology. 1(1). 49–52. 19 indexed citations
15.
Iqbal, M. Zafar, H. G. Grimmeiss, & Lars Samuelson. (1985). Copper deep acceptors in GaAs1-xPxalloy system. Journal of Physics C Solid State Physics. 18(5). 1017–1024. 5 indexed citations
16.
Grimmeiss, H. G., K. Larsson, & Lars Montelius. (1985). Hydrogen-like excited states of a deep donor in germanium. Solid State Communications. 54(10). 863–865. 7 indexed citations
17.
Jansson, L, Zhanguo Wang, L. Ledebo, & H. G. Grimmeiss. (1983). Composition dependence and random alloy effects for Cu and Fe in the semiconductor alloy AlGaAs. Il Nuovo Cimento D. 2(6). 1718–1722. 4 indexed citations
18.
Grimmeiss, H. G., et al.. (1980). Chemical identification of deep energy levels in Si:Se. Journal of Applied Physics. 51(12). 6238–6242. 27 indexed citations
19.
Grimmeiss, H. G. & R. Memming. (1962). p-n Photovoltaic Effect in Cadmium Sulfide. Journal of Applied Physics. 33(7). 2217–2222. 49 indexed citations
20.
Grimmeiss, H. G. & R. Memming. (1962). Origins of the Photovoltaic Effect in Vapor-Deposited CdS Layers. Journal of Applied Physics. 33(12). 3596–3597. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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