Giang T. Dang

802 total citations
35 papers, 694 citations indexed

About

Giang T. Dang is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Giang T. Dang has authored 35 papers receiving a total of 694 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Materials Chemistry, 20 papers in Electronic, Optical and Magnetic Materials and 16 papers in Electrical and Electronic Engineering. Recurrent topics in Giang T. Dang's work include ZnO doping and properties (27 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (10 papers). Giang T. Dang is often cited by papers focused on ZnO doping and properties (27 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (10 papers). Giang T. Dang collaborates with scholars based in Japan, New Zealand and Vietnam. Giang T. Dang's co-authors include Toshiyuki Kawaharamura, Mamoru Furuta, Martin Allen, W. Theiß, Noriko Nitta, Saurabh Saxena, Roger J. Reeves, Rodrigo M. Gazoni, Masafumi Taniwaki and Hiroshi Kanbe and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Giang T. Dang

34 papers receiving 684 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Giang T. Dang Japan 14 601 525 267 260 50 35 694
Geoffrey M. Foster United States 10 444 0.7× 413 0.8× 176 0.7× 228 0.9× 87 1.7× 23 553
A.A. Vasil'ev Russia 16 683 1.1× 720 1.4× 198 0.7× 462 1.8× 63 1.3× 75 831
А. В. Черных Russia 19 918 1.5× 940 1.8× 227 0.9× 608 2.3× 85 1.7× 64 1.1k
Madani Labed South Korea 12 322 0.5× 310 0.6× 150 0.6× 162 0.6× 30 0.6× 36 406
Jingzhi Yin China 14 486 0.8× 239 0.5× 309 1.2× 112 0.4× 64 1.3× 49 577
А. I. Kochkova Russia 17 852 1.4× 897 1.7× 165 0.6× 594 2.3× 53 1.1× 50 934
Daivasigamani Krishnamurthy Japan 8 865 1.4× 874 1.7× 222 0.8× 384 1.5× 127 2.5× 24 954
Tatsuro Watahiki Japan 11 512 0.9× 391 0.7× 311 1.2× 204 0.8× 59 1.2× 48 654
Florian Schmidt Germany 12 549 0.9× 413 0.8× 248 0.9× 117 0.5× 83 1.7× 35 641
Qiu Ai China 11 316 0.5× 297 0.6× 174 0.7× 100 0.4× 75 1.5× 19 407

Countries citing papers authored by Giang T. Dang

Since Specialization
Citations

This map shows the geographic impact of Giang T. Dang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Giang T. Dang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Giang T. Dang more than expected).

Fields of papers citing papers by Giang T. Dang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Giang T. Dang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Giang T. Dang. The network helps show where Giang T. Dang may publish in the future.

Co-authorship network of co-authors of Giang T. Dang

This figure shows the co-authorship network connecting the top 25 collaborators of Giang T. Dang. A scholar is included among the top collaborators of Giang T. Dang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Giang T. Dang. Giang T. Dang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Dang, Giang T., et al.. (2024). Analysis of dislocation defects in compositionally step-graded α-(Al x Ga 1− x ) 2 O 3 layers. RSC Advances. 14(43). 31570–31576. 1 indexed citations
3.
Dang, Giang T., Toshiyuki Kawaharamura, & Martin Allen. (2024). Method to Estimate Dislocation Densities from Images of α‐Ga2O3‐Based Corundum Oxides Using the Computer Vision YOLO Algorithm. physica status solidi (b). 262(8). 1 indexed citations
4.
Kawaharamura, Toshiyuki, et al.. (2023). Growth mechanism under the supply-limited regime in mist chemical vapor deposition: presumption of mist droplet state in high-temperature field. Japanese Journal of Applied Physics. 63(1). 15502–15502. 3 indexed citations
5.
Dang, Giang T., et al.. (2022). Fabrication of Zn1-Mg O/AgyO heterojunction diodes by mist CVD at atmospheric pressure. Applied Surface Science. 596. 153465–153465. 2 indexed citations
6.
7.
Dang, Giang T., et al.. (2021). The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition. AIP Advances. 11(4). 12 indexed citations
8.
Dang, Giang T., et al.. (2020). Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV. AIP Advances. 10(11). 24 indexed citations
9.
Dang, Giang T., et al.. (2019). Composition control of Zn 1- x Mg x O thin films grown using mist chemical vapor deposition. Japanese Journal of Applied Physics. 58(3). 35503–35503. 9 indexed citations
10.
Dang, Giang T., et al.. (2019). Growth mechanism of zinc oxide thin film by mist chemical vapor deposition via the modulation of [H 2 O]/[Zn] ratios. Applied Physics Express. 12(6). 65505–65505. 13 indexed citations
11.
Dang, Giang T., Martin Allen, Mamoru Furuta, & Toshiyuki Kawaharamura. (2019). Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications. Japanese Journal of Applied Physics. 58(9). 90606–90606. 26 indexed citations
12.
Dang, Giang T., et al.. (2018). Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law. Applied Physics Letters. 113(6). 84 indexed citations
13.
Dang, Giang T., et al.. (2018). Growth of α-Cr2O3single crystals by mist CVD using ammonium dichromate. Applied Physics Express. 11(11). 111101–111101. 16 indexed citations
14.
Kawaharamura, Toshiyuki, et al.. (2017). Development of novel reaction control technology for thin film fabrication using mist flow generating spacial & time gap. The Japan Society of Applied Physics. 1 indexed citations
15.
Sakamoto, Masanobu, et al.. (2017). Study on Fabrication of Yttrium Oxide Thin Films Using Mist CVD. 1 indexed citations
16.
Dang, Giang T., et al.. (2017). Incorporation of yttrium to yttrium iron garnet thin films fabricated by mist CVD. Japanese Journal of Applied Physics. 56(4S). 04CJ02–04CJ02. 7 indexed citations
17.
Dang, Giang T., Takayuki Uchida, Toshiyuki Kawaharamura, et al.. (2016). Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2 thin films. Applied Physics Express. 9(4). 41101–41101. 35 indexed citations
18.
Dang, Giang T., Toshiyuki Kawaharamura, Mamoru Furuta, & Martin Allen. (2015). Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition. IEEE Electron Device Letters. 36(5). 463–465. 39 indexed citations
19.
Dang, Giang T., Toshiyuki Kawaharamura, Takashi Hirao, et al.. (2011). Characteristics of ZnO Wafers Implanted with 60 keV Sn[sup +] Ions at Room Temperature and at 110 K. AIP conference proceedings. 270–273. 1 indexed citations
20.
Dang, Giang T.. (1980). Creation of the resonance? in inelastic electron scattering on nuclei. The European Physical Journal A. 294(4). 377–387. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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