A. F. Basile

447 total citations
30 papers, 318 citations indexed

About

A. F. Basile is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, A. F. Basile has authored 30 papers receiving a total of 318 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 8 papers in Condensed Matter Physics. Recurrent topics in A. F. Basile's work include Semiconductor materials and devices (20 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Semiconductor Quantum Structures and Devices (10 papers). A. F. Basile is often cited by papers focused on Semiconductor materials and devices (20 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Semiconductor Quantum Structures and Devices (10 papers). A. F. Basile collaborates with scholars based in Canada, Italy and United States. A. F. Basile's co-authors include P. M. Mooney, L. C. Feldman, John R. Williams, G. Verzellesi, John Rozen, Sarit Dhar, Enrico Zanoni, C. Canali, Ryan B. Lewis and Daniel A. Beaton and has published in prestigious journals such as Journal of Applied Physics, ACS Applied Materials & Interfaces and Applied Surface Science.

In The Last Decade

A. F. Basile

29 papers receiving 302 citations

Peers

A. F. Basile
Alessandro Sola Italy
W. Wohlmuth United States
K. Adachi Japan
R. D. Long Ireland
Golnaz Karbasian United States
J. Werking United States
Daewon Kwon United States
L. Malikova United States
S. A. Ringel United States
Alessandro Sola Italy
A. F. Basile
Citations per year, relative to A. F. Basile A. F. Basile (= 1×) peers Alessandro Sola

Countries citing papers authored by A. F. Basile

Since Specialization
Citations

This map shows the geographic impact of A. F. Basile's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. F. Basile with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. F. Basile more than expected).

Fields of papers citing papers by A. F. Basile

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. F. Basile. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. F. Basile. The network helps show where A. F. Basile may publish in the future.

Co-authorship network of co-authors of A. F. Basile

This figure shows the co-authorship network connecting the top 25 collaborators of A. F. Basile. A scholar is included among the top collaborators of A. F. Basile based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. F. Basile. A. F. Basile is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Basiricò, Laura, A. F. Basile, Piero Cosseddu, et al.. (2017). Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors. ACS Applied Materials & Interfaces. 9(40). 35150–35158. 18 indexed citations
2.
Mooney, P. M., et al.. (2016). Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces. Journal of Applied Physics. 120(3). 4 indexed citations
3.
Basile, A. F., Adrica Kyndiah, Fabio Biscarini, & Beatrice Fraboni. (2014). Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics. Journal of Applied Physics. 115(24). 4 indexed citations
4.
Basile, A. F., A. C. Ahyi, L. C. Feldman, John R. Williams, & P. M. Mooney. (2014). Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface. Journal of Applied Physics. 115(3). 8 indexed citations
5.
Basile, A. F. & Beatrice Fraboni. (2014). Numerical modeling of current-voltage characteristics to extract transport properties of organic semiconductors. Journal of Applied Physics. 116(19). 3 indexed citations
6.
Liu, Gang, Yi Xu, Can Xu, et al.. (2014). Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery. Applied Surface Science. 324. 30–34. 13 indexed citations
7.
Mooney, P. M., A. F. Basile, Ryan B. Lewis, et al.. (2013). Deep level defects in n-type GaAsBi and GaAs grown at low temperatures. Journal of Applied Physics. 113(13). 38 indexed citations
8.
Basile, A. F., A. C. Ahyi, L. C. Feldman, John R. Williams, & P. M. Mooney. (2012). Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation. Materials science forum. 717-720. 757–760. 2 indexed citations
9.
10.
Basile, A. F., Sarit Dhar, & P. M. Mooney. (2011). Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation. Journal of Applied Physics. 109(11). 18 indexed citations
11.
Beaton, Daniel A., et al.. (2011). Deep level defects in GaAs1−xBix/GaAs heterostructures. Semiconductor Science and Technology. 26(5). 55020–55020. 17 indexed citations
12.
Basile, A. F., John Rozen, John R. Williams, L. C. Feldman, & P. M. Mooney. (2011). Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces. Journal of Applied Physics. 109(6). 51 indexed citations
13.
Basile, A. F., Sarit Dhar, John Rozen, et al.. (2010). Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS. MRS Proceedings. 1246. 3 indexed citations
14.
Basile, A. F., John Rozen, Sarit Dhar, et al.. (2010). Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States. Materials science forum. 645-648. 499–502. 8 indexed citations
15.
Basile, A. F., John Rozen, Sarit Dhar, et al.. (2009). Electron trapping at interface states in SiO<inf>2</inf>/4H-SiC and SiO<inf>2</inf>/6H-SiC MOS capacitors. 1–2. 2 indexed citations
16.
Verzellesi, G., A. F. Basile, A. Cavallini, et al.. (2005). Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs. IEEE Transactions on Electron Devices. 52(4). 594–602. 5 indexed citations
17.
Verzellesi, G., A. F. Basile, Andrea Mazzanti, A. Cavallini, & C. Canali. (2003). Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs–GaAs HFETs. Electronics Letters. 39(21). 1548–1549. 2 indexed citations
18.
Verzellesi, G., Andrea Mazzanti, A. F. Basile, et al.. (2003). Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs). IEEE Transactions on Electron Devices. 50(8). 1733–1740. 26 indexed citations
19.
Verzellesi, G., A. F. Basile, Andrea Mazzanti, et al.. (2003). Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs. Electronics Letters. 39(10). 810–811. 3 indexed citations
20.
Mazzanti, Andrea, G. Verzellesi, A. F. Basile, et al.. (2002). Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs. AMS Acta (University of Bologna). 389–392.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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