W. Wohlmuth

455 total citations
36 papers, 357 citations indexed

About

W. Wohlmuth is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W. Wohlmuth has authored 36 papers receiving a total of 357 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 11 papers in Condensed Matter Physics. Recurrent topics in W. Wohlmuth's work include Semiconductor Quantum Structures and Devices (21 papers), Photonic and Optical Devices (12 papers) and Semiconductor Lasers and Optical Devices (11 papers). W. Wohlmuth is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Photonic and Optical Devices (12 papers) and Semiconductor Lasers and Optical Devices (11 papers). W. Wohlmuth collaborates with scholars based in United States, United Kingdom and South Korea. W. Wohlmuth's co-authors include I. Adesida, Patrick Fay, C. Caneau, M. Arafa, A. Mahajan, Jai Woong Seo, Sung‐Mo Kang, S. Chandrasekhar, Wenkai Wang and Richard C. Hallgren and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

W. Wohlmuth

32 papers receiving 322 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Wohlmuth United States 11 324 143 107 67 60 36 357
Fahrettin Sarcan Türkiye 12 176 0.5× 188 1.3× 96 0.9× 70 1.0× 37 0.6× 35 294
A. F. Basile Canada 10 282 0.9× 136 1.0× 48 0.4× 100 1.5× 18 0.3× 30 318
Hiroyuki Okino Japan 11 195 0.6× 263 1.8× 67 0.6× 20 0.3× 75 1.3× 31 373
Yichen Mao China 12 338 1.0× 166 1.2× 163 1.5× 8 0.1× 67 1.1× 33 381
R. D. Long Ireland 10 348 1.1× 129 0.9× 150 1.4× 80 1.2× 23 0.4× 16 394
J.M. McGregor Canada 7 287 0.9× 159 1.1× 108 1.0× 36 0.5× 45 0.8× 19 353
Shota Nishida Japan 11 337 1.0× 137 1.0× 68 0.6× 33 0.5× 97 1.6× 18 370
S. J. Lee Singapore 10 335 1.0× 131 0.9× 77 0.7× 18 0.3× 84 1.4× 15 355
A I Baranov Russia 10 215 0.7× 171 1.2× 67 0.6× 28 0.4× 109 1.8× 61 286

Countries citing papers authored by W. Wohlmuth

Since Specialization
Citations

This map shows the geographic impact of W. Wohlmuth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Wohlmuth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Wohlmuth more than expected).

Fields of papers citing papers by W. Wohlmuth

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Wohlmuth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Wohlmuth. The network helps show where W. Wohlmuth may publish in the future.

Co-authorship network of co-authors of W. Wohlmuth

This figure shows the co-authorship network connecting the top 25 collaborators of W. Wohlmuth. A scholar is included among the top collaborators of W. Wohlmuth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Wohlmuth. W. Wohlmuth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, Wayne, et al.. (2017). GaN technologies for applications from L- to Ka-band. 1–5. 7 indexed citations
2.
Wohlmuth, W., et al.. (2015). Pure-play GaN foundry technology for 50V applications. 1–4. 2 indexed citations
3.
Wang, Albert, et al.. (2014). Pure-play GaN foundry technology for RF applications. Asia-Pacific Microwave Conference. 188–190. 2 indexed citations
4.
Wohlmuth, W., et al.. (2013). AlGaN/GaN HEMT development targeted for X-band applications. 1–4. 10 indexed citations
5.
Ashraf, Huma, et al.. (2013). Advances in Back-side Via Etching of SiC for GaN Device Applications. 6 indexed citations
6.
WILLIAMS, DENIS, et al.. (2013). X-band MMIC scalable large signal model based on unit cell behavioral data model and passive embedding network. ORCA Online Research @Cardiff (Cardiff University). 1–4. 3 indexed citations
7.
Wohlmuth, W., et al.. (2008). An InGaP/GaAs HBT/JFET BiFET technology for PA bias circuit applications. 7 indexed citations
8.
Barratt, C., et al.. (2007). Development and Ramping of pHEMT in an "HBT Fab". 1 indexed citations
9.
Wohlmuth, W. & I. Adesida. (2005). Properties of R.F. magnetron sputtered cadmium–tin–oxide and indium–tin–oxide thin films. Thin Solid Films. 479(1-2). 223–231. 71 indexed citations
10.
11.
Fay, Patrick, et al.. (2002). High performance InAlAs/InGaAs/InP HEMT/MSM-based OEIC photoreceivers. 31. 579–582.
12.
Fay, Patrick, W. Wohlmuth, A. Mahajan, et al.. (1998). Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems. IEEE Photonics Technology Letters. 10(5). 713–715. 7 indexed citations
13.
Fay, Patrick, et al.. (1998). A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies. IEEE Photonics Technology Letters. 10(4). 582–584. 9 indexed citations
14.
Wohlmuth, W., M. Arafa, Patrick Fay, & I. Adesida. (1997). InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes. Applied Physics Letters. 70(22). 3026–3028. 6 indexed citations
15.
Wohlmuth, W., et al.. (1997). Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters. Japanese Journal of Applied Physics. 36(2R). 652–652. 3 indexed citations
16.
Fay, Patrick, M. Arafa, W. Wohlmuth, et al.. (1997). Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers. Journal of Lightwave Technology. 15(10). 1871–1879. 10 indexed citations
17.
Wohlmuth, W., et al.. (1997). High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers. IEEE Photonics Technology Letters. 9(5). 654–656. 12 indexed citations
18.
Wohlmuth, W., Patrick Fay, & I. Adesida. (1996). Dark current suppression in GaAs metal-semiconductor-metal photodetectors. IEEE Photonics Technology Letters. 8(8). 1061–1063. 13 indexed citations
19.
Fay, Patrick, W. Wohlmuth, C. Caneau, & I. Adesida. (1996). 18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication systems. IEEE Photonics Technology Letters. 8(5). 679–681. 17 indexed citations
20.
Wohlmuth, W., I. Adesida, & C. Caneau. (1995). <title>Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2550. 256–265. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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