Golnaz Karbasian

1.3k total citations
17 papers, 359 citations indexed

About

Golnaz Karbasian is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Golnaz Karbasian has authored 17 papers receiving a total of 359 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Golnaz Karbasian's work include Semiconductor materials and devices (11 papers), Quantum and electron transport phenomena (7 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). Golnaz Karbasian is often cited by papers focused on Semiconductor materials and devices (11 papers), Quantum and electron transport phenomena (7 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). Golnaz Karbasian collaborates with scholars based in United States, Ukraine and South Korea. Golnaz Karbasian's co-authors include Sayeef Salahuddin, Ava J. Tan, Ajay K. Yadav, Chenming Hu, Gregory L. Snider, Korok Chatterjee, Sangwan Kim, Roberto dos Reis, Asif Islam Khan and Alexei O. Orlov and has published in prestigious journals such as Applied Physics Letters, Nanotechnology and IEEE Electron Device Letters.

In The Last Decade

Golnaz Karbasian

16 papers receiving 352 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Golnaz Karbasian United States 9 301 181 92 66 58 17 359
X.W. Wang United States 9 260 0.9× 75 0.4× 141 1.5× 91 1.4× 52 0.9× 17 319
L. T. Tung Taiwan 9 337 1.1× 155 0.9× 56 0.6× 102 1.5× 92 1.6× 12 354
Pengfa Xu China 11 152 0.5× 237 1.3× 102 1.1× 192 2.9× 210 3.6× 18 404
Rahul Suri United States 9 261 0.9× 103 0.6× 98 1.1× 74 1.1× 61 1.1× 12 282
Valerio Di Lecce Italy 11 278 0.9× 165 0.9× 160 1.7× 33 0.5× 88 1.5× 24 342
B. Benbakhti United Kingdom 12 305 1.0× 125 0.7× 156 1.7× 98 1.5× 66 1.1× 39 412
M. Aleszkiewicz Poland 11 150 0.5× 214 1.2× 55 0.6× 89 1.3× 165 2.8× 39 320
F. Luckert United Kingdom 12 342 1.1× 297 1.6× 64 0.7× 43 0.7× 180 3.1× 23 421
Takamasa Kawanago Japan 12 375 1.2× 206 1.1× 48 0.5× 41 0.6× 73 1.3× 52 416
Abhay Shukla France 8 189 0.6× 292 1.6× 52 0.6× 55 0.8× 41 0.7× 11 344

Countries citing papers authored by Golnaz Karbasian

Since Specialization
Citations

This map shows the geographic impact of Golnaz Karbasian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Golnaz Karbasian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Golnaz Karbasian more than expected).

Fields of papers citing papers by Golnaz Karbasian

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Golnaz Karbasian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Golnaz Karbasian. The network helps show where Golnaz Karbasian may publish in the future.

Co-authorship network of co-authors of Golnaz Karbasian

This figure shows the co-authorship network connecting the top 25 collaborators of Golnaz Karbasian. A scholar is included among the top collaborators of Golnaz Karbasian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Golnaz Karbasian. Golnaz Karbasian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
2.
Chatterjee, Korok, Sangwan Kim, Golnaz Karbasian, et al.. (2019). Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation. IEEE Electron Device Letters. 40(9). 1423–1426. 30 indexed citations
3.
Chatterjee, Korok, Sangwan Kim, Golnaz Karbasian, et al.. (2017). Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery. IEEE Electron Device Letters. 38(10). 1379–1382. 84 indexed citations
4.
Karbasian, Golnaz, Ava J. Tan, Ajay K. Yadav, et al.. (2017). Ferroelectricity in HfO<inf>2</inf> thin films as a function of Zr doping. 1–2. 15 indexed citations
5.
Karbasian, Golnaz, et al.. (2017). Single electron transistors with hydrogen treatment of ALD SiO2in nanoscale metal–insulator–metal tunnel junctions. Nanotechnology. 28(21). 215203–215203. 1 indexed citations
6.
Kinder, Erich, et al.. (2017). Partial switching of ferroelectrics for synaptic weight storage. 33. 1–2. 7 indexed citations
7.
Karbasian, Golnaz, et al.. (2017). Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition. Applied Sciences. 7(3). 246–246. 13 indexed citations
8.
Karbasian, Golnaz, Roberto dos Reis, Ajay K. Yadav, et al.. (2017). Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2. Applied Physics Letters. 111(2). 69 indexed citations
9.
Karbasian, Golnaz, Alexei O. Orlov, Alexander S. Mukasyan, & Gregory L. Snider. (2016). Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition. 87. 32–35. 7 indexed citations
10.
Karbasian, Golnaz, Alexei O. Orlov, & Gregory L. Snider. (2015). Nanodamascene metal-insulator-metal single electron transistor prepared by atomic layer deposition of tunnel barrier and subsequent reduction of metal surface oxide. 1–2. 1 indexed citations
11.
Karbasian, Golnaz, et al.. (2015). Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(1). 3 indexed citations
12.
Karbasian, Golnaz, Alexei O. Orlov, & Gregory L. Snider. (2015). Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(6). 8 indexed citations
13.
Karbasian, Golnaz, et al.. (2015). Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(1). 6 indexed citations
14.
Karbasian, Golnaz, Patrick Fay, Huili Grace Xing, Alexei O. Orlov, & Gregory L. Snider. (2014). Chemical mechanical planarization of gold. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 32(2). 6 indexed citations
15.
Wang, Ronghua, Guowang Li, Golnaz Karbasian, et al.. (2013). Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz. IEEE Electron Device Letters. 34(3). 378–380. 61 indexed citations
16.
Wang, Ronghua, Guowang Li, Golnaz Karbasian, et al.. (2013). InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz. Applied Physics Express. 6(1). 16503–16503. 37 indexed citations
17.
Karbasian, Golnaz, Patrick Fay, Huili Grace Xing, et al.. (2012). High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(6). 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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