J. Werking

485 total citations
32 papers, 264 citations indexed

About

J. Werking is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Werking has authored 32 papers receiving a total of 264 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Werking's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). J. Werking is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). J. Werking collaborates with scholars based in United States. J. Werking's co-authors include H. Kroemer, Evelyn L. Hu, Chanh Nguyen, C. R. Bolognesi, C. Nguyen, Chang Li, Osama O. Awadelkarim, E. J. Caine, G. Tuttle and Y.D. Chan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

J. Werking

23 papers receiving 252 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Werking United States 7 199 175 50 46 23 32 264
T. Sonoda Japan 10 296 1.5× 208 1.2× 40 0.8× 45 1.0× 28 1.2× 43 318
Hans Rohdin United States 11 345 1.7× 202 1.2× 35 0.7× 105 2.3× 21 0.9× 26 371
P. E. R. Nordquist United States 7 261 1.3× 130 0.7× 67 1.3× 28 0.6× 13 0.6× 21 301
T. Nittono Japan 13 477 2.4× 333 1.9× 52 1.0× 70 1.5× 33 1.4× 42 512
N. Hashizume Japan 12 343 1.7× 216 1.2× 27 0.5× 57 1.2× 30 1.3× 50 380
C.K. Williams United States 7 252 1.3× 200 1.1× 73 1.5× 40 0.9× 32 1.4× 10 307
Jeremy J. M. Law United States 8 278 1.4× 102 0.6× 75 1.5× 34 0.7× 57 2.5× 22 299
M. Saarinen Finland 12 256 1.3× 245 1.4× 64 1.3× 60 1.3× 35 1.5× 41 339
L. Buydens Belgium 12 279 1.4× 196 1.1× 36 0.7× 41 0.9× 47 2.0× 31 308

Countries citing papers authored by J. Werking

Since Specialization
Citations

This map shows the geographic impact of J. Werking's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Werking with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Werking more than expected).

Fields of papers citing papers by J. Werking

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Werking. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Werking. The network helps show where J. Werking may publish in the future.

Co-authorship network of co-authors of J. Werking

This figure shows the co-authorship network connecting the top 25 collaborators of J. Werking. A scholar is included among the top collaborators of J. Werking based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Werking. J. Werking is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Bersuker, G., et al.. (2002). Charge-to-breakdown and trap generation process in thin oxides. 62–66. 1 indexed citations
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Bersuker, G., et al.. (2002). Short loop monitor for charging damage in implantation process. 77–80. 1 indexed citations
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Bersuker, G., et al.. (2002). Transistor degradation due to radiation in a high density plasma. 231–234. 1 indexed citations
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Bersuker, G., et al.. (2002). Process induced charging damage in thin gate oxides. 168–168.
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Awadelkarim, Osama O., et al.. (1998). The impact of metal-1 plasma processing-induced hot carrier injection on the characteristics and reliability of n-MOSFETs. IEEE Transactions on Electron Devices. 45(4). 861–866. 4 indexed citations
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Brożek, Tomasz, et al.. (1998). Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices. IEEE Transactions on Semiconductor Manufacturing. 11(2). 211–216. 6 indexed citations
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Trabzon, Levent, Osama O. Awadelkarim, & J. Werking. (1998). The effects of interlayer dielectric deposition and processing on the reliability of n-channel transistors. Solid-State Electronics. 42(11). 2031–2037. 4 indexed citations
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Awadelkarim, Osama O., et al.. (1998). Observation of channel shortening in n-metal–oxide–semiconductor field-effect transistors arising from interconnect plasma processing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1435–1439. 1 indexed citations
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Bersuker, G., J. Werking, & Sang Kim. (1997). Process Induced Charging Damage In Thin Gate Oxides. 21–24. 1 indexed citations
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Awadelkarim, Osama O., et al.. (1997). The Role Of Metal-1 Layout In Plasma Processing-induced Damage. 251–254. 1 indexed citations
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Trabzon, Levent, Osama O. Awadelkarim, J. Werking, G. Bersuker, & Y.D. Chan. (1996). Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFETs. IEEE Electron Device Letters. 17(12). 569–571. 5 indexed citations
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Werking, J., C. R. Bolognesi, Chang Li, et al.. (1992). High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers. IEEE Electron Device Letters. 13(3). 164–166. 65 indexed citations
20.
Nguyen, Chanh, J. Werking, H. Kroemer, & Evelyn L. Hu. (1990). InAs-AlSb quantum well as superconducting weak link with high critical current density. Applied Physics Letters. 57(1). 87–89. 49 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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