J. Werking

485 citations

32 papers · 264 · h-index 7

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces
Condensed Matter Physics
- Physics of Superconductivity and Magnetism

Papers in

Electrical and Electronic Engineering 30
- Semiconductor materials and devices 23
- Advancements in Semiconductor Devices and Circuit Design 19
- Integrated Circuits and Semiconductor Failure Analysis 12
- Electrostatic Discharge in Electronics 4
- Plasma Diagnostics and Applications 3
Atomic and Molecular Physics, and Optics 6
- Semiconductor Quantum Structures and Devices 5

Co-authors: Evelyn L. Hu (5 shared papers)H. Kroemer (5 shared papers)Chanh Nguyen (3 shared papers)C. R. Bolognesi (2 shared papers)C. Nguyen (1 shared paper)Chang Li (1 shared paper)Osama O. Awadelkarim (10 shared papers)E. J. Caine (1 shared paper)
Journals: IEEE Electron Device Letters (4 papers)Applied Physics Letters (3 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (3 papers)IEEE Transactions on Semiconductor Manufacturing (1 paper)Solid-State Electronics (1 paper)
Partner nations: United States

In The Last Decade

J. Werking

23 papers receiving 252 citations

Peers

Countries citing papers authored by J. Werking

Since Specialization

Citations

This map shows the geographic impact of J. Werking's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Werking with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Werking more than expected).

Fields of papers citing papers by J. Werking

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Werking. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Werking. The network helps show where J. Werking may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Werking, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Werking Line = papers co-authored together J. Werking links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 32 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers IEEE Electron Device Letters ·J. Werking, C. R. Bolognesi, Chang Li, C. Nguyen, Evelyn L. Hu, H. Kroemer	1992	65
2	InAs-AlSb quantum well as superconducting weak link with high critical current density Applied Physics Letters ·Chanh Nguyen, J. Werking, H. Kroemer, Evelyn L. Hu	1990	49
3	Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor IEEE Electron Device Letters ·C. R. Bolognesi, J. Werking, E. J. Caine, H. Kroemer, Evelyn L. Hu	1993	34
4	Methane/hydrogen-based reactive ion etching of InAs, InP, GaAs, and GaSb Applied Physics Letters ·J. Werking, J. Schramm, Chanh Nguyen, Evelyn L. Hu, H. Kroemer	1991	34
5	InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation Applied Physics Letters ·J. Werking, G. Tuttle, Chanh Nguyen, Evelyn L. Hu, H. Kroemer	1990	23
6	Integration of SiCN as a low κ etch stop and Cu passivation in a high performance Cu/low κ interconnect Jeremy I. Martin, S. Filipiak, T. Stephens, Fanghao Huang, M. Aminpur, J. Mueller, Ertugrul Demircan, Linlin Zhao, J. Werking, Cindy Goldberg, S. Park, T. Sparks, C. Esber	2003	9
7	Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices IEEE Transactions on Semiconductor Manufacturing ·Tomasz Brożek, V. Ramgopal Rao, A. Sridharan, J. Werking, Y.D. Chan, C.R. Viswanathan	1998	6
8	Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal–oxide–silicon field-effect transistors Journal of Applied Physics ·Levent Trabzon, Osama O. Awadelkarim, J. Werking, G. Bersuker, Y.D. Chan	1997	6
9	Localized charge injection through the gate oxide over gate-drain overlap region: mechanism, device dependence, and application for device diagnostics Tomasz Brożek, A. Sridharan, J. Werking, Y.D. Chan, C.R. Viswanathan	2002	5
10	Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFETs IEEE Electron Device Letters ·Levent Trabzon, Osama O. Awadelkarim, J. Werking, G. Bersuker, Y.D. Chan	1996	5
11	The impact of metal-1 plasma processing-induced hot carrier injection on the characteristics and reliability of n-MOSFETs IEEE Transactions on Electron Devices ·M.G. El Hassan, Osama O. Awadelkarim, J. Werking	1998	4
12	The effects of interlayer dielectric deposition and processing on the reliability of n-channel transistors Solid-State Electronics ·Levent Trabzon, Osama O. Awadelkarim, J. Werking	1998	4
13	Gate leakage current: A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Jianlan Jiang, Osama O. Awadelkarim, J. Werking	1998	4
14	Leakage Current Due To Plasma Induced Damage In Thin Gate Oxide MOS Transistors A. Sridharan, Jongsu Oh, J. Werking, Tomasz Brożek, C.R. Viswanathan	1997	4
15	Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching IEEE Electron Device Letters ·Murat Okandan, S.J. Fonash, M. Ozaita, F. N. Preuninger, Y.D. Chan, J. Werking	1997	3
16	Process Induced Charging Damage In Thin Gate Oxides G. Bersuker, J. Werking, Sang Kim	1997	1
17	Charge-to-breakdown and trap generation process in thin oxides G. Bersuker, J. Werking, D.Y. Chan	2002	1
18	Hardware and process dependence of electron shading damage in a high density plasma oxide etch tool J. Werking, Wolfgang Bösch, D. W. McCormack, J. Flanner, Gregory S. Ferguson	1999	1
19	Short loop monitor for charging damage in implantation process G. Bersuker, J. Werking, G. Williamson, Y.D. Chan	2002	1
20	The Role Of Metal-1 Layout In Plasma Processing-induced Damage M.G. El Hassan, Osama O. Awadelkarim, J. Werking	1997	1

About J. Werking

J. Werking is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Materials Chemistry, having authored 32 papers that have together received 264 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Semiconductor Quantum Structures and Devices (5 papers), Copper Interconnects and Reliability (5 papers), Metal and Thin Film Mechanics (4 papers), Electrostatic Discharge in Electronics (4 papers) and Plasma Diagnostics and Applications (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (175 citations), Condensed Matter Physics (46 citations), Electrical and Electronic Engineering (199 citations), Surfaces, Coatings and Films (9 citations) and Electronic, Optical and Magnetic Materials (22 citations). J. Werking has collaborated with scholars based in United States. Frequent co-authors include Evelyn L. Hu, H. Kroemer, Chanh Nguyen, C. R. Bolognesi, C. Nguyen, Chang Li, Osama O. Awadelkarim, E. J. Caine, Y.D. Chan and G. Tuttle. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, IEEE Transactions on Semiconductor Manufacturing and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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