Hao Yue
About
In The Last Decade
Hao Yue
49 papers receiving 270 citations
Peers
Comparison fields: 5 of 54
- Electrical and Electronic Engineering 222
- Materials Chemistry 54
- Control and Systems Engineering 49
- Condensed Matter Physics 42
- Biomedical Engineering 31
Countries citing papers authored by Hao Yue
This map shows the geographic impact of Hao Yue's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao Yue with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao Yue more than expected).
Fields of papers citing papers by Hao Yue
This network shows the impact of papers produced by Hao Yue. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao Yue. The network helps show where Hao Yue may publish in the future.
Co-authorship network of co-authors of Hao Yue
This figure shows the co-authorship network connecting the top 25 collaborators of Hao Yue. A scholar is included among the top collaborators of Hao Yue based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao Yue. Hao Yue is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 0 | |
| 3 | 2 | |
| 4 | 1 | |
| 5 | 6 | |
| 6 | 1 | |
| 7 | 6 | |
| 8 | 6 | |
| 9 | 5 | |
| 10 | 4 | |
| 11 | Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids | 80 |
| 12 | 7 | |
| 13 | 4 | |
| 14 | 12 | |
| 15 | 3 | |
| 16 | 1 | |
| 17 | Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT | 2 |
| 18 | Development of SOI technology on the new insulator | 1 |
| 19 | 2 | |
| 20 | 1 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.