Wan-Ching Su

485 total citations
25 papers, 418 citations indexed

About

Wan-Ching Su is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Wan-Ching Su has authored 25 papers receiving a total of 418 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 3 papers in Polymers and Plastics. Recurrent topics in Wan-Ching Su's work include Thin-Film Transistor Technologies (18 papers), Electrical and Thermal Properties of Materials (9 papers) and Silicon and Solar Cell Technologies (9 papers). Wan-Ching Su is often cited by papers focused on Thin-Film Transistor Technologies (18 papers), Electrical and Thermal Properties of Materials (9 papers) and Silicon and Solar Cell Technologies (9 papers). Wan-Ching Su collaborates with scholars based in Taiwan, China and United Kingdom. Wan-Ching Su's co-authors include Ting‐Chang Chang, Hui‐Chun Huang, Po‐Yung Liao, Bo‐Wei Chen, Po‐Hsun Chen, Tsung‐Ming Tsai, Hong-Chih Chen, Kuan‐Ju Zhou, Mao‐Chou Tai and Jianwen Yang and has published in prestigious journals such as Applied Physics Letters, Nanoscale and Journal of Physics D Applied Physics.

In The Last Decade

Wan-Ching Su

25 papers receiving 404 citations

Peers

Wan-Ching Su

EEE

CMN

Mao‐Chou Tai Taiwan

Gerwin Gelinck Netherlands

Yunyong Nam South Korea

Galo Torres Sevilla Switzerland

Yaqing Shen Saudi Arabia

I. Sak Lee South Korea

Byeong Hyeon Lee South Korea

Ruixuan Peng China

Po‐Yung Liao Taiwan

Yahui Duan China

Mao‐Chou Tai Taiwan

Wan-Ching Su

323 ×0.8

EEE

147 ×0.8

68 ×0.9

50 ×0.7

15 ×0.4

CMN

Citations per year, relative to Wan-Ching Su Wan-Ching Su (= 1×) peers Mao‐Chou Tai

Countries citing papers authored by Wan-Ching Su

Since Specialization

Citations

This map shows the geographic impact of Wan-Ching Su's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wan-Ching Su with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wan-Ching Su more than expected).

Fields of papers citing papers by Wan-Ching Su

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wan-Ching Su. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wan-Ching Su. The network helps show where Wan-Ching Su may publish in the future.

Co-authorship network of co-authors of Wan-Ching Su

This figure shows the co-authorship network connecting the top 25 collaborators of Wan-Ching Su. A scholar is included among the top collaborators of Wan-Ching Su based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wan-Ching Su. Wan-Ching Su is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Yilin, Ting‐Chang Chang, Qing Zhu, et al.. (2021). Investigating two-stage degradation of threshold voltage induced by off-state stress in AlGaN/GaN HEMTs. Semiconductor Science and Technology. 37(2). 25017–25017. 1 indexed citations

Lin, Dong, Wan-Ching Su, Ting‐Chang Chang, et al.. (2021). Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination. IEEE Transactions on Electron Devices. 68(2). 556–559. 14 indexed citations

Chang, Ting‐Chang, et al.. (2021). Investigation of Thermal Behavior on High-Performance Organic TFTs Using Phase Separated Organic Semiconductors. IEEE Electron Device Letters. 42(6). 859–862. 11 indexed citations

Lin, Dong, Wan-Ching Su, Ting‐Chang Chang, et al.. (2020). Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress. IEEE Transactions on Electron Devices. 67(6). 2372–2375. 12 indexed citations

Chang, Ting‐Chang, et al.. (2020). Flexible low-temperature polycrystalline silicon thin-film transistors. Materials Today Advances. 5. 100040–100040. 71 indexed citations

Chen, Hong-Chih, Jianjie Chen, Kuan‐Ju Zhou, et al.. (2020). Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs. IEEE Transactions on Electron Devices. 67(7). 2807–2811. 21 indexed citations

Chang, Ting‐Chang, Po‐Hsun Chen, Po‐Yung Liao, et al.. (2020). Influence of Hot Carriers and Illumination Stress on a-InGaZnO TFTs With Asymmetrical Geometry. IEEE Electron Device Letters. 41(5). 745–748. 5 indexed citations

Chen, Hong-Chih, Jianjie Chen, Kuan‐Ju Zhou, et al.. (2020). Hydrogen Diffusion and Threshold Voltage Shifts in Top-Gate Amorphous InGaZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 67(8). 3123–3128. 34 indexed citations

Chang, Ting‐Chang, et al.. (2019). Investigating the Back-Channel Effect and Asymmetric Degradation Under Self-Heating Stress in Large Size a-InGaZnO TFTs. IEEE Electron Device Letters. 41(1). 58–61. 6 indexed citations

10.

Shao, Jingjing, Wan-Ching Su, Ting‐Chang Chang, et al.. (2019). Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs. Journal of Physics D Applied Physics. 53(8). 85104–85104. 5 indexed citations

11.

Yang, Chih-Cheng, Po‐Hsun Chen, Ting‐Chang Chang, et al.. (2019). Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency. Nanoscale Research Letters. 14(1). 375–375. 7 indexed citations

12.

Chen, Hong-Chih, Hong‐Yi Tu, Hui‐Chun Huang, et al.. (2019). Inhibiting the Kink Effect and Hot-Carrier Stress Degradation Using Dual-Gate Low-Temperature Poly-Si TFTs. IEEE Electron Device Letters. 41(1). 54–57. 12 indexed citations

13.

Yang, Chih-Cheng, Po‐Hsun Chen, Yu‐Ting Su, et al.. (2018). Integrating a Charge Trapping Layer in Passivated Emitter Rear Contact Cell to Enhance Efficiency. IEEE Electron Device Letters. 39(7). 983–986. 2 indexed citations

14.

Liao, Po‐Yung, Ting‐Chang Chang, Wan-Ching Su, et al.. (2017). Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures. Applied Physics Letters. 110(26). 10 indexed citations

15.

Yang, Jianwen, Po‐Yung Liao, Ting‐Chang Chang, et al.. (2017). Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress. IEEE Electron Device Letters. 38(5). 592–595. 24 indexed citations

16.

Su, Wan-Ching, Ting‐Chang Chang, Po‐Yung Liao, et al.. (2017). The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors. Applied Physics Letters. 110(10). 14 indexed citations

17.

Chen, Bo‐Wei, Hsin-Lu Chen, Ting‐Chang Chang, et al.. (2017). Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide. IEEE Transactions on Electron Devices. 64(8). 3167–3173. 17 indexed citations

18.

Liao, Po‐Yung, Ting‐Chang Chang, Wan-Ching Su, et al.. (2016). Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In–Ga–Zn–O thin-film transistors. Applied Physics Express. 9(12). 124101–124101. 48 indexed citations

19.

Chen, Po‐Hsun, Kuan‐Chang Chang, Ting‐Chang Chang, et al.. (2016). Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory. IEEE Transactions on Electron Devices. 63(11). 4288–4294. 8 indexed citations

20.

Zhang, Wei, Ying Hu, Ting‐Chang Chang, et al.. (2015). An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory. IEEE Electron Device Letters. 36(8). 772–774. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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