He Qian

16.4k total citations · 12 hit papers
290 papers, 12.7k citations indexed

About

He Qian is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Materials Chemistry. According to data from OpenAlex, He Qian has authored 290 papers receiving a total of 12.7k indexed citations (citations by other indexed papers that have themselves been cited), including 271 papers in Electrical and Electronic Engineering, 62 papers in Cellular and Molecular Neuroscience and 41 papers in Materials Chemistry. Recurrent topics in He Qian's work include Advanced Memory and Neural Computing (205 papers), Ferroelectric and Negative Capacitance Devices (152 papers) and Semiconductor materials and devices (84 papers). He Qian is often cited by papers focused on Advanced Memory and Neural Computing (205 papers), Ferroelectric and Negative Capacitance Devices (152 papers) and Semiconductor materials and devices (84 papers). He Qian collaborates with scholars based in China, United States and Taiwan. He Qian's co-authors include Huaqiang Wu, Bin Gao, Jianshi Tang, Peng Yao, Wenqiang Zhang, Qingtian Zhang, J. Joshua Yang, Ning Deng, Shimeng Yu and Xinyi Li and has published in prestigious journals such as Nature, Science and Advanced Materials.

In The Last Decade

He Qian

262 papers receiving 12.5k citations

Hit Papers

Fully hardware-implemented memristor convolutional neural... 2017 2026 2020 2023 2020 2017 2020 2019 2022 500 1000 1.5k

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
He Qian China 52 11.7k 4.0k 2.4k 1.8k 1.7k 290 12.7k
Bin Gao China 61 15.4k 1.3× 5.3k 1.3× 2.7k 1.1× 2.1k 1.2× 2.4k 1.4× 355 16.5k
Huaqiang Wu China 60 14.8k 1.3× 5.3k 1.3× 3.1k 1.3× 2.2k 1.3× 2.3k 1.4× 299 16.3k
John Paul Strachan United States 50 15.0k 1.3× 6.0k 1.5× 2.5k 1.0× 2.2k 1.3× 2.3k 1.4× 123 16.0k
Gregory S. Snider United States 10 11.5k 1.0× 4.8k 1.2× 936 0.4× 2.0k 1.1× 1.4k 0.8× 11 12.4k
Hao Jiang United States 31 8.4k 0.7× 3.7k 0.9× 1.2k 0.5× 1.4k 0.8× 1.3k 0.8× 67 9.2k
Qiangfei Xia United States 51 14.8k 1.3× 6.2k 1.5× 2.1k 0.9× 2.4k 1.4× 2.1k 1.3× 137 16.4k
Ru Huang China 49 9.5k 0.8× 2.3k 0.6× 1.3k 0.5× 962 0.5× 1.1k 0.6× 637 10.6k
Yuchao Yang China 49 9.6k 0.8× 3.8k 0.9× 1.3k 0.5× 1.4k 0.8× 2.3k 1.4× 201 10.9k
Dmitri B. Strukov United States 45 20.9k 1.8× 8.9k 2.2× 2.3k 1.0× 3.5k 2.0× 3.0k 1.8× 142 22.2k
Qing Wu United States 40 8.0k 0.7× 3.2k 0.8× 1.4k 0.6× 1.3k 0.7× 843 0.5× 142 8.8k

Countries citing papers authored by He Qian

Since Specialization
Citations

This map shows the geographic impact of He Qian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by He Qian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites He Qian more than expected).

Fields of papers citing papers by He Qian

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by He Qian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by He Qian. The network helps show where He Qian may publish in the future.

Co-authorship network of co-authors of He Qian

This figure shows the co-authorship network connecting the top 25 collaborators of He Qian. A scholar is included among the top collaborators of He Qian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with He Qian. He Qian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Xi, He Qian, Hanxi Li, et al.. (2025). Bio‐Inspired Wide‐Field Visual Neuron Implemented with Ultra‐Low Information Loss Population Coding. Advanced Materials. 38(2). e08803–e08803.
2.
He, Yuxuan, Enrico Zio, Zhaoming Yang, et al.. (2025). A systematic resilience assessment framework for multi-state systems based on physics-informed neural network. Reliability Engineering & System Safety. 257. 110866–110866. 45 indexed citations breakdown →
3.
Li, Xueqi, Bin Gao, Qi Qin, et al.. (2025). Federated learning using a memristor compute-in-memory chip with in situ physical unclonable function and true random number generator. Nature Electronics. 8(6). 518–528. 4 indexed citations
4.
Liang, Xiangpeng, Jianshi Tang, Ya‐Nan Zhong, et al.. (2024). Physical reservoir computing with emerging electronics. Nature Electronics. 7(3). 193–206. 101 indexed citations breakdown →
5.
Liang, Renrong, Zhigang Zhang, Liyang Pan, et al.. (2024). A Dual-Gate Vertical Channel IGZO Transistor for BEOL Stackable 3D Parallel Integration for Memory and Computing Applications. 1–2. 1 indexed citations
6.
Yang, Zhaoming, Zhe Liu, Jing Zhou, et al.. (2023). A graph neural network (GNN) method for assigning gas calorific values to natural gas pipeline networks. Energy. 278. 127875–127875. 25 indexed citations
7.
Zhang, Qingtian, Bin Gao, Jianshi Tang, et al.. (2023). Uncertainty quantification via a memristor Bayesian deep neural network for risk-sensitive reinforcement learning. Nature Machine Intelligence. 5(7). 714–723. 29 indexed citations
8.
You, Fei, He Qian, Bo Pang, et al.. (2023). A Doherty Power Amplifier Based on AM-AM/PM Cancellation Combining Network Synthesized by Back-Off Complex Load Impedance. IEEE Microwave and Wireless Technology Letters. 33(9). 1333–1336. 10 indexed citations
9.
Li, Yijun, Jianshi Tang, Bin Gao, et al.. (2023). Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning. Nature Communications. 14(1). 7140–7140. 46 indexed citations
10.
Gao, Bin, et al.. (2022). Trends and challenges in the circuit and macro of RRAM-based computing-in-memory systems. SHILAP Revista de lepidopterología. 1(1). 100004–100004. 33 indexed citations
11.
Wei, Tiantian, Yuyao Lu, Fan Zhang, et al.. (2022). Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor. Advanced Materials. 35(10). e2209925–e2209925. 56 indexed citations
12.
Chen, Junhao, Jianshi Tang, Xinyi Li, et al.. (2022). Microscopic Modeling and Optimization of NbOx Mott Memristor for Artificial Neuron Applications. IEEE Transactions on Electron Devices. 69(12). 6686–6692. 16 indexed citations
13.
Zhong, Ya‐Nan, Jianshi Tang, Xinyi Li, et al.. (2021). Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing. Nature Communications. 12(1). 408–408. 428 indexed citations breakdown →
15.
Huang, Peng, Yudi Zhao, Meiran Zhao, et al.. (2019). Impacts of State Instability and Retention Failure of Filamentary Analog RRAM on the Performance of Deep Neural Network. IEEE Transactions on Electron Devices. 66(11). 4517–4522. 44 indexed citations
16.
Huang, Peng, Runze Han, Zheng Zhou, et al.. (2019). Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array. IEEE Electron Device Letters. 40(9). 1538–1541. 44 indexed citations
17.
Zhao, Meiran, Bin Gao, Yue Xi, et al.. (2019). Endurance and Retention Degradation of Intermediate Levels in Filamentary Analog RRAM. IEEE Journal of the Electron Devices Society. 7. 1239–1247. 25 indexed citations
18.
Li, Yujia, Huaqiang Wu, Bin Gao, et al.. (2018). Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array. Chinese Physics B. 27(11). 118502–118502. 7 indexed citations
19.
Gao, Bin, et al.. (2017). New structure with SiO 2 -gate-dielectric select gates in vertical-channel three-dimensional (3D) NAND flash memory. Microelectronics Reliability. 78. 80–84. 4 indexed citations
20.
Wu, Wei, Huaqiang Wu, Bin Gao, et al.. (2017). Improving Analog Switching in HfO<italic>x</italic>-Based Resistive Memory With a Thermal Enhanced Layer. IEEE Electron Device Letters. 38(8). 1019–1022. 232 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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