Jiahui Sun

982 total citations · 1 hit paper
47 papers, 737 citations indexed

About

Jiahui Sun is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jiahui Sun has authored 47 papers receiving a total of 737 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jiahui Sun's work include GaN-based semiconductor devices and materials (27 papers), Silicon Carbide Semiconductor Technologies (26 papers) and Semiconductor materials and devices (23 papers). Jiahui Sun is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Silicon Carbide Semiconductor Technologies (26 papers) and Semiconductor materials and devices (23 papers). Jiahui Sun collaborates with scholars based in Hong Kong, China and Germany. Jiahui Sun's co-authors include Kevin J. Chen, Zheyang Zheng, Jin Wei, Li Zhang, Kuang Sheng, Han Xu, Hongyi Xu, Tao Chen, Xinke Wu and Sirui Feng and has published in prestigious journals such as IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics and International Journal of Hydrogen Energy.

In The Last Decade

Jiahui Sun

45 papers receiving 711 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gallium nitride-based complementary logic integrated circuits

2021 214 citations Zheyang Zheng, Li Zhang et al. profile →

Peers

Jiahui Sun

EEE

CMP

EOMM

AMPO

Bejoy N. Pushpakaran United States

Riko I Made Singapore

Kun Bai China

Hao Lu China

Jinwan Kim South Korea

Thomas Aichinger Austria

Vandana Kumari India

Ananth Saran Yalamarthy United States

J. D. Blevins United States

Yi Zhuo China

Bejoy N. Pushpakaran United States

Jiahui Sun

622 ×1.0

EEE

326 ×0.9

CMP

170 ×0.9

EOMM

158 ×1.4

82 ×1.1

AMPO

Citations per year, relative to Jiahui Sun Jiahui Sun (= 1×) peers Bejoy N. Pushpakaran

Countries citing papers authored by Jiahui Sun

Since Specialization

Citations

This map shows the geographic impact of Jiahui Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiahui Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiahui Sun more than expected).

Fields of papers citing papers by Jiahui Sun

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiahui Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiahui Sun. The network helps show where Jiahui Sun may publish in the future.

Co-authorship network of co-authors of Jiahui Sun

This figure shows the co-authorship network connecting the top 25 collaborators of Jiahui Sun. A scholar is included among the top collaborators of Jiahui Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiahui Sun. Jiahui Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shu, Ji, Mian Tao, Yat Hon Ng, et al.. (2025). Stacked Strongly Coupled GaN/SiC Cascode Device With Fast Switching and Reclaimed Strong dv/dt Control. IEEE Transactions on Electron Devices. 72(5). 2647–2653. 2 indexed citations

Shu, Ji, et al.. (2025). Unlocking the Full Potential of GaN/SiC Cascode Device With 3D Co-Packaging and Enhanced dv/dt Control Capability. IEEE Transactions on Power Electronics. 40(5). 6874–6882. 1 indexed citations

Li, Jianxun, et al.. (2024). Design of Shiitake Mushroom Robotic Picking Grasper: Considering Stipe Compressive Stress Relaxation. Machines. 12(4). 241–241. 5 indexed citations

Sun, Jiahui, Ji Shu, Zheyang Zheng, & Kevin J. Chen. (2024). Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 271–274.

Shu, Ji, Jiahui Sun, Zheyang Zheng, & Kevin J. Chen. (2024). Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance. IEEE Transactions on Power Electronics. 39(5). 5567–5575. 3 indexed citations

Sun, Jiahui, Ji Shu, & Kevin J. Chen. (2024). A High-Voltage/High-Speed Human-Body-Model ESD Simulator Using SiC MOSFET. IEEE Electron Device Letters. 45(6). 1056–1059. 1 indexed citations

Shu, Ji, Jiahui Sun, Xinke Wu, & Kevin J. Chen. (2024). A Dynamic Two-Stage Gate Driver for Unlocking the Fast-Switching Potential of GaN HEMT. IEEE Transactions on Power Electronics. 40(4). 4752–4756. 1 indexed citations

Shu, Ji, Jiahui Sun, Mian Tao, et al.. (2024). 3D Co-packaging of GaN/SiC Cascode Device for High-Frequency Power Switching Operation. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 486–489. 1 indexed citations

Shu, Ji, Jiahui Sun, Zheyang Zheng, & Kevin J. Chen. (2024). Gate Driver Design for SiC Power MOSFETs With a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection. IEEE Transactions on Power Electronics. 39(5). 5558–5566. 4 indexed citations

10.

Sun, Jiahui, Zheyang Zheng, Li Zhang, & Kevin J. Chen. (2023). Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs. IEEE Transactions on Industrial Electronics. 71(3). 3113–3121. 7 indexed citations

11.

Wu, Xinke, et al.. (2023). Dynamic On-Resistance Characterization of GaN Power HEMTs Under Forward/Reverse Conduction Using Multigroup Double Pulse Test. IEEE Transactions on Power Electronics. 39(2). 1963–1967. 5 indexed citations

12.

Sun, Jiahui, et al.. (2023). Gate Characteristics of Enhancement-Mode Fully Depleted p -GaN Gate HEMT. IEEE Electron Device Letters. 44(12). 2015–2018. 9 indexed citations

13.

He, Jiabei, Han Xu, Kailun Zhong, et al.. (2022). Gate Reliability of Schottky-Type p-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias. IEEE Electron Device Letters. 43(9). 1404–1407. 22 indexed citations

14.

Lyu, Gang, Jiahui Sun, Yuru Wang, & Kevin J. Chen. (2021). Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device. IEEE Transactions on Industrial Electronics. 69(12). 12773–12783. 4 indexed citations

15.

Zheng, Zheyang, Li Zhang, Wenjie Song, et al.. (2021). Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs. IEEE Electron Device Letters. 42(11). 1584–1587. 24 indexed citations

16.

Zhong, Kailun, Yuru Wang, Gang Lyu, et al.. (2021). 650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications. IEEE Transactions on Industrial Electronics. 69(9). 8997–9006. 9 indexed citations

17.

Sun, Jiahui, Zheyang Zheng, Kailun Zhong, Gang Lyu, & Kevin J. Chen. (2021). Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices. IEEE Transactions on Power Electronics. 36(11). 12158–12162. 6 indexed citations

18.

Sun, Jiahui, Jin Wei, Zheyang Zheng, & Kevin J. Chen. (2020). Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests. IEEE Transactions on Industrial Electronics. 68(9). 8798–8807. 33 indexed citations

19.

Sun, Jiahui, Shu Yang, Hongyi Xu, et al.. (2019). High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique. IEEE Journal of Emerging and Selected Topics in Power Electronics. 8(1). 215–222. 26 indexed citations

20.

Sun, Jiahui, Jin Wei, Zheyang Zheng, Yuru Wang, & Kevin J. Chen. (2019). Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET. IEEE Journal of Emerging and Selected Topics in Power Electronics. 7(3). 1539–1546. 55 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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