D. Eng

441 total citations
45 papers, 327 citations indexed

About

D. Eng is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, D. Eng has authored 45 papers receiving a total of 327 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in D. Eng's work include Semiconductor materials and devices (29 papers), Semiconductor Quantum Structures and Devices (23 papers) and Radio Frequency Integrated Circuit Design (15 papers). D. Eng is often cited by papers focused on Semiconductor materials and devices (29 papers), Semiconductor Quantum Structures and Devices (23 papers) and Radio Frequency Integrated Circuit Design (15 papers). D. Eng collaborates with scholars based in United States. D. Eng's co-authors include D. Leung, A.K. Oki, R. Lai, R. Grundbacher, Y.C. Chou, Qiang Kan, M. Wójtowicz, Thomas Block, P.H. Liu and Ioulia Smorchkova and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

D. Eng

41 papers receiving 288 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Eng United States	11	308	160	112	33	26	45	327
D. Leung United States	12	313 1.0×	174 1.1×	114 1.0×	31 0.9×	18 0.7×	49	333
D. Xu United States	10	325 1.1×	153 1.0×	120 1.1×	40 1.2×	32 1.2×	34	354
S. Seki Japan	9	414 1.3×	132 0.8×	70 0.6×	17 0.5×	41 1.6×	19	438
Yanbin Luo United States	10	317 1.0×	66 0.4×	37 0.3×	17 0.5×	39 1.5×	28	347
T.J. Smith United States	10	380 1.2×	69 0.4×	150 1.3×	16 0.5×	24 0.9×	28	392
J.P. Harrang United States	9	241 0.8×	248 1.6×	93 0.8×	57 1.7×	16 0.6×	16	364
J. Gering United States	11	287 0.9×	163 1.0×	47 0.4×	12 0.4×	8 0.3×	26	311
Christian Friesicke Germany	13	506 1.6×	72 0.5×	235 2.1×	14 0.4×	30 1.2×	65	545
Y. Yamane Japan	14	452 1.5×	157 1.0×	45 0.4×	23 0.7×	7 0.3×	62	472
K.R. Gleason United States	10	362 1.2×	288 1.8×	46 0.4×	43 1.3×	7 0.3×	23	405

Countries citing papers authored by D. Eng

Since Specialization

Citations

This map shows the geographic impact of D. Eng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Eng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Eng more than expected).

Fields of papers citing papers by D. Eng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Eng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Eng. The network helps show where D. Eng may publish in the future.

Co-authorship network of co-authors of D. Eng

This figure shows the co-authorship network connecting the top 25 collaborators of D. Eng. A scholar is included among the top collaborators of D. Eng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Eng. D. Eng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chou, Y.C., D. Leung, D. Buttari, et al.. (2010). Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications. 807–812. 1 indexed citations

Lai, R., Y.C. Chou, P.H. Liu, et al.. (2007). High Performance and High Reliability of 0.1μm InP HEMT MMIC Technology on 100 mm InP Substrates. 44. 63–66. 4 indexed citations

Chou, Y.C., R. Lai, D. Leung, et al.. (2006). Gate Sinking Effect of 0. 1 /spl mu/m InP HEMT MMICs Using Pt/Ti/Pt/Au. 188–191. 4 indexed citations

Zeng, Xiangfeng, et al.. (2006). The Reliability Study of MIM Capacitor Built On Top of Backside Via In III-V Compound MMIC. 1 indexed citations

Grundbacher, R., Y.C. Chou, R. Lai, et al.. (2005). 0.1 μm InGaAs/InAlAs/InP HEMT low noise amplifiers with compact stacked cascode design and its de-bias effect induced failure (DI31F). 181–184. 2 indexed citations

Chou, Y.C., D. Leung, R. Grundbacher, et al.. (2005). The de-bias effect of gate curent in InP HEMT MMICS. 393–396. 1 indexed citations

Chou, Y.C., Hanxi Guan, G.P. Li, et al.. (2005). Degradation analysis of 0.1 μm InP HEMTs using low frequency noise characterization. 619–622. 1 indexed citations

Lai, R., Thomas Block, Arvind Kumar Sharma, et al.. (2005). The effect of RF-driven gate current on DC/RF performance in GaAs pHEMT MMIC power amplifiers. IEEE Transactions on Microwave Theory and Techniques. 53(11). 3398–3406. 14 indexed citations

Grundbacher, R., R. Lai, B.R. Allen, et al.. (2005). Hot Carrier Effect on Power Performance in GaAs PHEMT MMIC Power Amplifiers. IEEE MTT-S International Microwave Symposium Digest, 2005.. 165–168. 3 indexed citations

10.

Chou, Y.C., R. Lai, R. Grundbacher, et al.. (2004). Degradation mechanism of GaAs PHEMT power amplifiers under elevated temperature lifetest with RF-overdrive. 463–468. 4 indexed citations

11.

Chou, Y.C., D. Leung, R. Grundbacher, et al.. (2004). The Effect of Gate Metal Interdiffusion on Reliability Performance in GaAs PHEMTs. IEEE Electron Device Letters. 25(6). 351–353. 11 indexed citations

12.

Grundbacher, R., R. Lai, M. Barsky, et al.. (2004). High performance and high reliability InP HEMT low noise amplifiers for phased-array applications. 157–160. 12 indexed citations

13.

Chou, Y.C., R. Grundbacher, D. Leung, et al.. (2004). Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs. IEEE Electron Device Letters. 25(2). 64–66. 25 indexed citations

14.

Eng, D., et al.. (2003). Hydrogen sensitivity of GaAs HEMT amplifiers: the effect of bias mode. 89–93. 1 indexed citations

15.

Chou, Y.C., M. Barsky, R. Grundbacher, et al.. (2003). On the development of automatic assembly line for InP HEMT MMICs. 476–479. 2 indexed citations

16.

Leung, D., R. Lai, D. Eng, et al.. (2002). High Reliability of 0.1 µm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates. Japanese Journal of Applied Physics. 41(Part 1, No. 2B). 1099–1103. 13 indexed citations

17.

Chou, Y.C., D. Leung, R. Lai, et al.. (2002). High reliability non-hermetic 0.1 μm GaAs pseudomorphic HEMT MMIC amplifiers. 170–173. 3 indexed citations

18.

Leung, D., et al.. (2001). High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers. 5 indexed citations

19.

Eng, D., et al.. (1995). Quantifying ESD/EOS latent damage and integrated circuit leakage currents. 304–310. 10 indexed citations

20.

Hellman, Olof C., Nicole Herbots, & D. Eng. (1989). A Model for Interdiffusion at Metal Semiconductor Interfaces: Conditions for Spiking. MRS Proceedings. 148. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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