Xianfeng Ni

895 citations

19 papers · 752 indexed · h-index 8

Co-authors: H. Morkoç̌Ü. Özgür Qian Fan Ryoko Shimada Jinqiao Xie Jacob H. Leach Huiyong LiuXing Li
Topics: GaN-based semiconductor devices and materials (18 papers)Ga2O3 and related materials (10 papers)Semiconductor Quantum Structures and Devices (5 papers)
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters Journal of Applied Physics Proceedings of the IEEE
Partner nations: United States China Sweden

In The Last Decade

Xianfeng Ni

16 papers receiving 717 citations

Peers

Countries citing papers authored by Xianfeng Ni

Since Specialization

Citations

This map shows the geographic impact of Xianfeng Ni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xianfeng Ni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xianfeng Ni more than expected).

Fields of papers citing papers by Xianfeng Ni

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xianfeng Ni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xianfeng Ni. The network helps show where Xianfeng Ni may publish in the future.

Co-authorship network of co-authors of Xianfeng Ni

This figure shows the co-authorship network connecting the top 25 collaborators of Xianfeng Ni. A scholar is included among the top collaborators of Xianfeng Ni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xianfeng Ni. Xianfeng Ni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

#	Work	Indexed citations
1	Dielectric Passivation Treatment of InGaN MESA on Si Substrates for Red Micro-LED Application 2025 ·Crystals ·Hongyu Qin,(unknown),Qian Fan,Xianfeng Ni,Li Tao,Xingxing Gu	1
2	385 nm AlGaN Near-Ultraviolet Micro Light-Emitting Diode Arrays with WPE 30.18% Realized Using an AlN-Inserted Hole Spreading Enhancement S Electron Blocking Layer 2025 ·Coatings ·Nan Qi,(unknown),(unknown),Yun Zhang,Hui Ding,Qian Fan,Xianfeng Ni,Xing Gu	0
3	Research on the Correlation of Physical Properties Between NbN Superconducting Thin Films and Substrates 2025 ·Coatings ·(unknown),(unknown),Qian Fan,Xianfeng Ni,Xingxing Gu	0
4	Study on the Influence of KOH Wet Treatment on Red μLEDs 2023 ·Crystals ·(unknown),Qian Fan,Xianfeng Ni,Li Tao,Xingxing Gu	5
5	Improvement of AlN Material Quality by High-Temperature Annealing Toward Power Diodes 2020 ·IEEE Transactions on Electron Devices ·Xianfeng Ni,Qian Fan,Bin Hua,Peihao Sun,(unknown),(unknown),Chen Huang,Xing Gu	9
6	Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor 2011 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Haiyong Gao,(unknown),Xianfeng Ni,Jacob H. Leach,Ümit Özgür,H. Morkoç̌	1
7	Photoluminescence of Mg‐doped m‐plane GaN grown by MOCVD on bulk GaN substrates 2011 ·physica status solidi (a) ·Bo Monemar,T. Paskova,Г. Позина,Carl Hemmingsson,Peder Bergman,David Lindgren,Lars Samuelson,Xianfeng Ni,H. Morkoç̌,Tanya Paskova,Zhaoxia Bi,B. Jonas Ohlsson	7
8	Photoluminescence of Mg-doped m -plane GaN grown by MOCVD on bulk GaN substrates 2011 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Bo Monemar,T. Paskova,Г. Позина,Carl Hemmingsson,Peder Bergman,David Lindgren,Lars Samuelson,Xianfeng Ni,H. Morkoç,Tanya Paskova,Zhaoxia Bi,B. Jonas Ohlsson	2
9	Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors 2010 ·Journal of Applied Physics ·Lin Zhou,Jacob H. Leach,Xianfeng Ni,H. Morkoç̌,David J. Smith	28
10	Stress test measurements of lattice‐matched InAlN/AlN/GaN HFET structures 2010 ·physica status solidi (a) ·Jacob H. Leach,(unknown),Xianfeng Ni,(unknown),Ümit Özgür,H. Morkoç̌,(unknown),(unknown),A. Matulionis,(unknown),Çağlıyan Kurdak,Yong‐Tae Moon	0
11	GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels 2010 ·Proceedings of the IEEE ·Ü. Özgür,Huiyong Liu,Xing Li,Xianfeng Ni,H. Morkoç̌	95
12	On the Light Emission in GaN Based Heterostructures at High Injection 2009 ·MRS Proceedings ·Xianfeng Ni,(unknown),Huiyong Liu,N. Izyumskaya,V. Avrutin,Ümit Özgür,H. Morkoç̌,Tanya Paskova,(unknown),K. R. Evans	1
13	On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers 2008 ·Applied Physics Letters ·Jinqiao Xie,Xianfeng Ni,Qian Fan,Ryoko Shimada,Ü. Özgür,H. Morkoç̌	265
14	Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells 2008 ·Applied Physics Letters ·Xianfeng Ni,Qian Fan,Ryoko Shimada,Ü. Özgür,H. Morkoç̌	194
15	High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors 2007 ·Applied Physics Letters ·Jinqiao Xie,Xianfeng Ni,(unknown),Jacob H. Leach,Ü. Özgür,H. Morkoç̌	96
16	Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy 2006 ·MRS Proceedings ·(unknown),Xianfeng Ni,(unknown),Necmi Bıyıklı,Qian Fan,Serguei Chevtchenko,Ü. Özgür,H. Morkoç̌,You Ke,Robert P. Devaty,W. J. Choyke,C. K. Inoki,T. S. Kuan	4
17	Recovery of GaN surface after reactive ion etching 2006 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown),Serguei Chevtchenko,Xianfeng Ni,(unknown),(unknown)	3
18	I - V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork 2006 ·Applied Physics Letters ·Jinqiao Xie,(unknown),Xianfeng Ni,Serguei Chevtchenko,H. Morkoç̌	10
19	Reactive ion etch damage on GaN and its recovery 2006 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Qian Fan,Serguei Chevtchenko,Xianfeng Ni,(unknown),Feng Yun,H. Morkoç̌	31

About Xianfeng Ni

Xianfeng Ni is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 19 papers that have together received 752 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (10 papers) and Semiconductor Quantum Structures and Devices (5 papers). The work is most often cited by research in Condensed Matter Physics (719 citations), Atomic and Molecular Physics, and Optics (439 citations) and Electronic, Optical and Magnetic Materials (259 citations). Xianfeng Ni has collaborated with scholars based in United States, China and Sweden. Frequent co-authors include H. Morkoç̌, Ü. Özgür, Qian Fan, Ryoko Shimada, Jinqiao Xie, Jacob H. Leach, Huiyong Liu, Xing Li, Serguei Chevtchenko and David J. Smith. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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