Yong‐Tae Moon

469 total citations
16 papers, 399 citations indexed

About

Yong‐Tae Moon is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Yong‐Tae Moon has authored 16 papers receiving a total of 399 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 7 papers in Electronic, Optical and Magnetic Materials and 6 papers in Electrical and Electronic Engineering. Recurrent topics in Yong‐Tae Moon's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (7 papers) and ZnO doping and properties (6 papers). Yong‐Tae Moon is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (7 papers) and ZnO doping and properties (6 papers). Yong‐Tae Moon collaborates with scholars based in South Korea, United States and Japan. Yong‐Tae Moon's co-authors include Tae‐Yeon Seong, Dong-Joon Kim, Seong-Ju Park, Chel‐Jong Choi, H. Morkoç̌, John T. Wolan, Serguei Chevtchenko, Feng Yun, Young‐Woo Ok and Yoon-Seok Kim and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Yong‐Tae Moon

15 papers receiving 384 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yong‐Tae Moon South Korea	12	313	206	158	154	110	16	399
Chi-Chih Liao Taiwan	10	232 0.7×	158 0.8×	106 0.7×	233 1.5×	143 1.3×	28	437
Y. Park South Korea	12	366 1.2×	188 0.9×	148 0.9×	272 1.8×	149 1.4×	28	477
Tilman Schimpke Germany	14	453 1.4×	263 1.3×	220 1.4×	197 1.3×	107 1.0×	21	534
M. W. Cho Japan	9	205 0.7×	208 1.0×	142 0.9×	176 1.1×	108 1.0×	25	358
I. Halidou Tunisia	15	318 1.0×	381 1.8×	157 1.0×	346 2.2×	100 0.9×	41	570
B. Jobst Germany	9	179 0.6×	196 1.0×	85 0.5×	207 1.3×	109 1.0×	17	387
Ah Hyun Park South Korea	12	296 0.9×	319 1.5×	161 1.0×	147 1.0×	45 0.4×	38	459
G.Y. Zhang China	13	327 1.0×	201 1.0×	147 0.9×	285 1.9×	208 1.9×	40	495
Hongling Xiao China	15	474 1.5×	175 0.8×	188 1.2×	222 1.4×	266 2.4×	44	563
A. Bengoechea‐Encabo Spain	15	481 1.5×	344 1.7×	277 1.8×	107 0.7×	93 0.8×	35	549

Countries citing papers authored by Yong‐Tae Moon

Since Specialization

Citations

This map shows the geographic impact of Yong‐Tae Moon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yong‐Tae Moon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yong‐Tae Moon more than expected).

Fields of papers citing papers by Yong‐Tae Moon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yong‐Tae Moon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yong‐Tae Moon. The network helps show where Yong‐Tae Moon may publish in the future.

Co-authorship network of co-authors of Yong‐Tae Moon

This figure shows the co-authorship network connecting the top 25 collaborators of Yong‐Tae Moon. A scholar is included among the top collaborators of Yong‐Tae Moon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yong‐Tae Moon. Yong‐Tae Moon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Moon, Yong‐Tae, et al.. (2020). Using SiO ₂ -Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode. ECS Journal of Solid State Science and Technology. 9(3). 36002–36002. 6 indexed citations

Moon, Yong‐Tae, et al.. (2018). High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer. Optics Express. 26(5). 5111–5111. 22 indexed citations

Moon, Yong‐Tae, et al.. (2017). High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer. Journal of Alloys and Compounds. 732. 630–636. 21 indexed citations

Moon, Yong‐Tae, et al.. (2010). Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate. physica status solidi (a). 208(1). 195–198. 33 indexed citations

Kim, Sun‐Kyung, Jin‐Wook Lee, Ho‐Seok Ee, et al.. (2010). High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters. Optics Express. 18(11). 11025–11025. 25 indexed citations

Leach, Jacob H., Xianfeng Ni, Ümit Özgür, et al.. (2010). Stress test measurements of lattice‐matched InAlN/AlN/GaN HFET structures. physica status solidi (a). 207(6). 1345–1347.

Moon, Yong‐Tae, et al.. (2006). Observation of surface charging at the edge of a Schottky contact. IEEE Electron Device Letters. 27(4). 211–213. 14 indexed citations

Fan, Qian, Bo Xiao, Ya. I. Alivov, et al.. (2006). Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor. Applied Physics Letters. 88(12). 36 indexed citations

Yun, Feng, et al.. (2005). GaN resistive hydrogen gas sensors. Applied Physics Letters. 87(7). 52 indexed citations

10.

Kwon, Min‐Ki, Seong‐Ho Baek, Young‐Woo Ok, et al.. (2005). Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. Applied Physics Letters. 87(6). 50 indexed citations

11.

Moon, Yong‐Tae, et al.. (2004). Recovery of dry-etch-induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(2). 489–491. 22 indexed citations

12.

Kim, Dong-Joon, Seong-Ju Park, Do Young Noh, Min-Su Yi, & Yong‐Tae Moon. (2003). Effects of pressure and NH3 flow on the two-dimensional electron mobility in AlGaN/GaN heterostructures. Journal of the Korean Physical Society. 42(5). 691–695. 1 indexed citations

13.

Moon, Yong‐Tae, Dong-Joon Kim, Yoon-Seok Kim, et al.. (2002). Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 248. 494–497. 3 indexed citations

14.

Moon, Yong‐Tae, et al.. (2001). Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells. Journal of Applied Physics. 89(11). 6514–6518. 74 indexed citations

15.

Kim, Dong-Joon, Yong‐Tae Moon, Chel‐Jong Choi, et al.. (2000). Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs. Journal of Crystal Growth. 221(1-4). 368–372. 25 indexed citations

16.

Moon, Yong‐Tae, Dong-Joon Kim, In‐Hwan Lee, et al.. (1999). Optical and Structural Studies of Phase Separation in InGaN Film Grown by MOCVD. physica status solidi (b). 216(1). 167–170. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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