Bo Monemar

2.9k total citations
100 papers, 2.3k citations indexed

About

Bo Monemar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Bo Monemar has authored 100 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Condensed Matter Physics, 44 papers in Electrical and Electronic Engineering and 42 papers in Materials Chemistry. Recurrent topics in Bo Monemar's work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (38 papers) and ZnO doping and properties (32 papers). Bo Monemar is often cited by papers focused on GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (38 papers) and ZnO doping and properties (32 papers). Bo Monemar collaborates with scholars based in Sweden, Japan and United States. Bo Monemar's co-authors include Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, Hisashi Murakami, Lars Samuelson, Shigenobu Yamakoshi, Akito Kuramata, Magnus Heurlin, Zhaoxia Bi and Rie Togashi and has published in prestigious journals such as Chemical Reviews, Physical Review Letters and Nano Letters.

In The Last Decade

Bo Monemar

93 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bo Monemar Sweden 23 1.7k 1.5k 767 682 639 100 2.3k
Uttam Singisetti United States 31 2.2k 1.3× 2.1k 1.4× 1.3k 1.7× 724 1.1× 713 1.1× 102 3.2k
Youdou Zheng China 24 1.2k 0.7× 1.1k 0.8× 925 1.2× 960 1.4× 214 0.3× 146 2.1k
Yoshihiro Kokubun Japan 24 2.1k 1.2× 1.9k 1.3× 984 1.3× 544 0.8× 984 1.5× 81 2.8k
Xiangqian Xiu China 20 888 0.5× 728 0.5× 475 0.6× 813 1.2× 201 0.3× 156 1.4k
Jörg Schörmann Germany 22 801 0.5× 727 0.5× 427 0.6× 796 1.2× 183 0.3× 67 1.4k
Dunjun Chen China 23 853 0.5× 1.2k 0.8× 1.1k 1.4× 1.5k 2.2× 139 0.2× 171 2.2k
T. Remmele Germany 21 662 0.4× 556 0.4× 570 0.7× 892 1.3× 174 0.3× 55 1.6k
Jonas Lähnemann Germany 22 840 0.5× 570 0.4× 425 0.6× 726 1.1× 126 0.2× 66 1.4k
D. M. Schaadt Germany 18 952 0.6× 674 0.5× 1.1k 1.4× 412 0.6× 148 0.2× 101 2.1k
H.‐C. Semmelhack Germany 16 1.3k 0.7× 721 0.5× 562 0.7× 258 0.4× 201 0.3× 32 1.5k

Countries citing papers authored by Bo Monemar

Since Specialization
Citations

This map shows the geographic impact of Bo Monemar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bo Monemar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bo Monemar more than expected).

Fields of papers citing papers by Bo Monemar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bo Monemar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bo Monemar. The network helps show where Bo Monemar may publish in the future.

Co-authorship network of co-authors of Bo Monemar

This figure shows the co-authorship network connecting the top 25 collaborators of Bo Monemar. A scholar is included among the top collaborators of Bo Monemar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bo Monemar. Bo Monemar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kneissl, Michael, J. Christen, A. Hoffmann, et al.. (2023). Nitride Semiconductors. physica status solidi (b). 260(8).
2.
Gogova, D., Steffen Richter, Jawad Ul‐Hassan, et al.. (2022). Epitaxial growth of β-Ga2O3 by hot-wall MOCVD. AIP Advances. 12(5). 29 indexed citations
3.
Iwaya, Motoaki, et al.. (2022). Thermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers. Physical Review Materials. 6(10). 13 indexed citations
4.
Togashi, Rie, et al.. (2021). Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates. Journal of Crystal Growth. 563. 126111–126111. 4 indexed citations
5.
Konishi, Keita, et al.. (2019). Dependence of thermal stability of GaN on substrate orientation and off-cut. Japanese Journal of Applied Physics. 58(SC). SCCD17–SCCD17. 5 indexed citations
6.
Knight, Sean, A. Mock, Rafał Korlacki, et al.. (2018). Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect. Applied Physics Letters. 112(1). 51 indexed citations
7.
Bi, Zhaoxia, Martin Ek, Tomaš Stankevič, et al.. (2018). Self-assembled InN quantum dots on side facets of GaN nanowires. Journal of Applied Physics. 123(16). 16 indexed citations
8.
Konishi, Keita, Ken Goto, Rie Togashi, et al.. (2018). Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy. Journal of Crystal Growth. 492. 39–44. 30 indexed citations
9.
Goto, Ken, Keita Konishi, Hisashi Murakami, et al.. (2018). Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties. Thin Solid Films. 666. 182–184. 175 indexed citations
10.
Higashiwaki, Masataka, Kohei Sasaki, Man Hoi Wong, et al.. (2015). Current Status of Gallium Oxide-Based Power Device Technology. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1–4. 7 indexed citations
11.
Позина, Г., et al.. (2012). The effect of exciton dimensionality on resonance energy transfer: advances for organic color converters in hybrid inorganic/organic LEDs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8255. 82550I–82550I. 1 indexed citations
12.
Позина, Г., et al.. (2011). Dependence of Resonance Energy Transfer on Exciton Dimensionality. Physical Review Letters. 107(23). 236805–236805. 36 indexed citations
13.
Hemmingsson, Carl, et al.. (2011). Growth of GaN nanotubes by halide vapor phase epitaxy. Nanotechnology. 22(8). 85602–85602. 27 indexed citations
14.
Monemar, Bo, M. Kittler, & H. G. Grimmeiss. (2008). Advances in Light Emitting Materials. Trans Tech Publications Ltd. eBooks. 4 indexed citations
15.
Larsson, M., K. F. Karlsson, Per Olof Holtz, et al.. (2006). Enhancement of the Luminescence Intensity of InAs/GaAs Quantum Dots Induced by an External Electric Field. Nano Letters. 7(1). 188–193. 9 indexed citations
16.
Yakimova, Rositza & Bo Monemar. (2006). Preface. Journal of Crystal Growth. 300(1). 1–1. 1 indexed citations
17.
Позина, Г., Peder Bergman, Bo Monemar, et al.. (2001). Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport. Materials science forum. 353-356. 791–794. 1 indexed citations
18.
Són, Nguyên Tiên, Pham Nam Hai, Weimin Chen, et al.. (2000). The Carbon Vacancy Pair in 4H and 6H SiC. Materials science forum. 338-342. 821–824. 3 indexed citations
19.
Godlewski, M., Peder Bergman, Bo Monemar, et al.. (1995). Defect Related Recombination Processes in II-VI Quantum Wells. Materials science forum. 196-201. 455–460. 1 indexed citations
20.
Chen, Weimin, Rosa Leon, Eicke R. Weber, et al.. (1993). Electronic Structure of P<sub>In</sub> Antisite in InP. Materials science forum. 143-147. 211–216. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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