Zhaoxia Bi

952 total citations
41 papers, 731 citations indexed

About

Zhaoxia Bi is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zhaoxia Bi has authored 41 papers receiving a total of 731 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 20 papers in Materials Chemistry and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zhaoxia Bi's work include GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (19 papers) and Ga2O3 and related materials (17 papers). Zhaoxia Bi is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (19 papers) and Ga2O3 and related materials (17 papers). Zhaoxia Bi collaborates with scholars based in Sweden, China and Denmark. Zhaoxia Bi's co-authors include Lars Samuelson, Bo Monemar, Enrique Barrigón, Magnus Heurlin, Anders Gustafsson, Anders Mikkelsen, Filip Lenrick, Rafal Ciechonski, Yi Shi and Reine Wallenberg and has published in prestigious journals such as Chemical Reviews, Nano Letters and ACS Nano.

In The Last Decade

Zhaoxia Bi

37 papers receiving 706 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhaoxia Bi Sweden 15 353 336 318 287 184 41 731
Thorsten Mehrtens Germany 16 237 0.7× 207 0.6× 154 0.5× 265 0.9× 257 1.4× 43 741
J. Malindretos Germany 18 389 1.1× 464 1.4× 143 0.4× 207 0.7× 222 1.2× 42 699
Yasutoshi Kotaka Japan 20 363 1.0× 320 1.0× 140 0.4× 208 0.7× 180 1.0× 51 835
Cristian Stagarescu United States 12 250 0.7× 275 0.8× 90 0.3× 265 0.9× 161 0.9× 27 616
Soraya Sangiao Spain 16 286 0.8× 187 0.6× 162 0.5× 253 0.9× 438 2.4× 42 798
S. I. Bozhko Russia 15 418 1.2× 144 0.4× 109 0.3× 248 0.9× 401 2.2× 74 815
Ines Pietzonka Germany 14 199 0.6× 395 1.2× 128 0.4× 419 1.5× 433 2.4× 56 726
R. N. Kyutt Russia 13 412 1.2× 276 0.8× 107 0.3× 337 1.2× 280 1.5× 95 738
Katsuhiko Inaba Japan 17 624 1.8× 143 0.4× 154 0.5× 543 1.9× 195 1.1× 53 966
Maarten Bischoff Netherlands 17 395 1.1× 107 0.3× 120 0.4× 279 1.0× 510 2.8× 49 905

Countries citing papers authored by Zhaoxia Bi

Since Specialization
Citations

This map shows the geographic impact of Zhaoxia Bi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhaoxia Bi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhaoxia Bi more than expected).

Fields of papers citing papers by Zhaoxia Bi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhaoxia Bi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhaoxia Bi. The network helps show where Zhaoxia Bi may publish in the future.

Co-authorship network of co-authors of Zhaoxia Bi

This figure shows the co-authorship network connecting the top 25 collaborators of Zhaoxia Bi. A scholar is included among the top collaborators of Zhaoxia Bi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhaoxia Bi. Zhaoxia Bi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Rui, et al.. (2025). Internal field and interfaces in organic and perovskite optoelectronic devices investigated via electroabsorption spectroscopy. Journal of Materials Chemistry C. 13(44). 22104–22120.
2.
Bao, Yang, Weifang Lu, Chunyu Liu, et al.. (2025). Fabrication and Characterizations of Porous AlGaN Distributed Bragg Reflectors with Excellent Thermal Stability at High Temperature. ACS Applied Electronic Materials. 7(10). 4628–4638.
3.
Mo, Mianzhen, Kai Huang, Zhaoxia Bi, et al.. (2024). Impact of Mg-Doped AlGaN Electron Blocking Layer on Micro-LEDs: A Comparative Analysis of Carrier Transport Versus Chip Size and Current Density. IEEE Transactions on Electron Devices. 72(1). 306–311.
4.
Gustafsson, Anders, Axel R. Persson, Per O. Å. Persson, et al.. (2024). Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures. Nanotechnology. 35(25). 255703–255703. 1 indexed citations
5.
Bi, Zhaoxia, Anders Gustafsson, Rainer Timm, et al.. (2023). Relaxed InGaN templates as a basis for ultra-small RGB-emitting microLEDs. 2–2.
6.
Persson, Axel R., Anders Gustafsson, Zhaoxia Bi, et al.. (2023). Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs. Applied Physics Letters. 123(2). 2 indexed citations
7.
Sun, Jie, Zhaoxia Bi, Santosh Pandit, et al.. (2022). Insights into the Mechanism for Vertical Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition. ACS Applied Materials & Interfaces. 14(5). 7152–7160. 41 indexed citations
8.
Bi, Zhaoxia, Taiping Lü, Neimantas Vainorius, et al.. (2020). Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs. ACS Applied Materials & Interfaces. 12(15). 17845–17851. 26 indexed citations
9.
Bi, Zhaoxia, Jonas Johansson, Filip Lenrick, et al.. (2020). Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications. Small. 16(30). e1907364–e1907364. 11 indexed citations
10.
Bi, Zhaoxia, Martin Ek, Tomaš Stankevič, et al.. (2018). Self-assembled InN quantum dots on side facets of GaN nanowires. Journal of Applied Physics. 123(16). 16 indexed citations
11.
Zhou, Tao, Tomaš Stankevič, Zhaoxia Bi, et al.. (2018). Lattice Tilt Mapping using Full Field Diffraction X-Ray Microscopy at ID01 ESRF. Microscopy and Microanalysis. 24(S2). 128–129. 3 indexed citations
12.
Dzhigaev, Dmitry, Tomaš Stankevič, Zhaoxia Bi, et al.. (2017). X-ray Bragg Ptychography on a Single InGaN/GaN Core–Shell Nanowire. ACS Nano. 11(7). 6605–6611. 27 indexed citations
13.
Monemar, Bo, T. Paskova, Г. Позина, et al.. (2011). Photoluminescence of Mg‐doped m‐plane GaN grown by MOCVD on bulk GaN substrates. physica status solidi (a). 208(7). 1532–1534. 7 indexed citations
14.
Bi, Zhaoxia. (2006). Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology. Journal of Crystal Growth. 300(1). 123–126. 9 indexed citations
15.
Bi, Zhaoxia, Z. L. Xie, Xiangqian Xiu, et al.. (2005). Thermal annealing of InN films grown by metal–organic chemical vapor deposition. Thin Solid Films. 488(1-2). 111–115. 8 indexed citations
16.
Bi, Zhaoxia, Yi Zheng, R. Zhang, et al.. (2004). Dielectric properties of AlN film on Si substrate. Journal of Materials Science Materials in Electronics. 15(5). 317–320. 24 indexed citations
17.
Liu, Bo, R. Zhang, Zhaoxia Bi, et al.. (2004). Temperature dependence of indium nitride oxidation properties. 73–76. 2 indexed citations
18.
Bi, Zhaoxia. (2003). Synthesis of ZnAl2O4/-Al2O3 complex substrates and growth of GaN films. 46(1). 41–41. 1 indexed citations
19.
Shen, Bo, Zhaoxia Bi, Shulin Gu, et al.. (2003). GaN1−xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition. Journal of Crystal Growth. 255(1-2). 52–56. 9 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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