N. Ben Sédrine

1.5k total citations
67 papers, 1.2k citations indexed

About

N. Ben Sédrine is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, N. Ben Sédrine has authored 67 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 38 papers in Materials Chemistry and 26 papers in Condensed Matter Physics. Recurrent topics in N. Ben Sédrine's work include ZnO doping and properties (26 papers), GaN-based semiconductor devices and materials (26 papers) and Ga2O3 and related materials (18 papers). N. Ben Sédrine is often cited by papers focused on ZnO doping and properties (26 papers), GaN-based semiconductor devices and materials (26 papers) and Ga2O3 and related materials (18 papers). N. Ben Sédrine collaborates with scholars based in Portugal, France and Tunisia. N. Ben Sédrine's co-authors include R. Chtourou, T. Monteiro, R. Mechiakh, M. R. Correia, J. Rodrigues, J. F. C. Carreira, Yogendra Kumar Mishra, Rainer Adelung, R. Bensaha and Vasile Postica and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

N. Ben Sédrine

65 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Ben Sédrine Portugal 18 789 633 279 252 249 67 1.2k
Emre Gür Türkiye 22 914 1.2× 753 1.2× 317 1.1× 201 0.8× 406 1.6× 95 1.4k
A. Reszka Poland 20 789 1.0× 547 0.9× 263 0.9× 234 0.9× 313 1.3× 110 1.2k
E. Piscopiello Italy 25 921 1.2× 569 0.9× 117 0.4× 329 1.3× 334 1.3× 61 1.5k
Mark E. White United States 25 990 1.3× 774 1.2× 225 0.8× 143 0.6× 476 1.9× 47 1.4k
Guillaume Monier France 17 392 0.5× 579 0.9× 174 0.6× 321 1.3× 133 0.5× 71 967
Yemin Hu China 27 1.1k 1.4× 839 1.3× 193 0.7× 253 1.0× 500 2.0× 83 1.8k
V. V. Strelchuk Ukraine 17 1.2k 1.5× 774 1.2× 143 0.5× 308 1.2× 307 1.2× 208 1.6k
W. F. Pong Taiwan 24 1.1k 1.3× 543 0.9× 155 0.6× 153 0.6× 417 1.7× 68 1.4k
M. Peres Portugal 23 1.2k 1.5× 722 1.1× 375 1.3× 175 0.7× 599 2.4× 126 1.6k
Mikael Ottosson Sweden 20 901 1.1× 784 1.2× 156 0.6× 150 0.6× 209 0.8× 61 1.3k

Countries citing papers authored by N. Ben Sédrine

Since Specialization
Citations

This map shows the geographic impact of N. Ben Sédrine's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Ben Sédrine with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Ben Sédrine more than expected).

Fields of papers citing papers by N. Ben Sédrine

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Ben Sédrine. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Ben Sédrine. The network helps show where N. Ben Sédrine may publish in the future.

Co-authorship network of co-authors of N. Ben Sédrine

This figure shows the co-authorship network connecting the top 25 collaborators of N. Ben Sédrine. A scholar is included among the top collaborators of N. Ben Sédrine based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Ben Sédrine. N. Ben Sédrine is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Correia, M. R., Gwénolé Jacopin, Julien Pernot, et al.. (2022). Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes. ACS Applied Nano Materials. 5(1). 972–984. 12 indexed citations
2.
Pinto, João L., et al.. (2022). UV-C irradiation-based inactivation of SARS-CoV-2 in contaminated porous and non-porous surfaces. Journal of Photochemistry and Photobiology B Biology. 234. 112531–112531. 15 indexed citations
3.
Shtepliuk, Ivan, Ivan G. Ivanov, N. Pliatsikas, et al.. (2021). Clustering and Morphology Evolution of Gold on Nanostructured Surfaces of Silicon Carbide: Implications for Catalysis and Sensing. ACS Applied Nano Materials. 4(2). 1282–1293. 11 indexed citations
4.
Shtepliuk, Ivan, N. Pliatsikas, Jing‐Xin Jian, et al.. (2021). Silver nanoparticle array on weakly interacting epitaxial graphene substrate as catalyst for hydrogen evolution reaction under neutral conditions. Applied Physics Letters. 119(15). 3 indexed citations
5.
Sédrine, N. Ben, Margaret Sequeira, Christian Wetzel, et al.. (2021). Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties. Journal of Materials Chemistry C. 9(28). 8809–8818. 8 indexed citations
6.
Rodrigues, J., Daria Smazna, N. Ben Sédrine, et al.. (2019). Probing surface states in C60decorated ZnO microwires: detailed photoluminescence and cathodoluminescence investigations. Nanoscale Advances. 1(4). 1516–1526. 16 indexed citations
7.
Sédrine, N. Ben, Annelise Kopp Alves, Manuel A. Martins, et al.. (2018). Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications. Applied Physics Letters. 113(20). 7 indexed citations
8.
Strobel, Julian, Fabian Schütt, Cameliu Himcinschi, et al.. (2018). Hierarchical Aerographite 3D flexible networks hybridized by InP micro/nanostructures for strain sensor applications. Scientific Reports. 8(1). 13880–13880. 9 indexed citations
9.
Sédrine, N. Ben, J. Rodrigues, A.J. Neves, et al.. (2018). Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites. ACS Applied Nano Materials. 1(8). 3845–3858. 12 indexed citations
10.
Sédrine, N. Ben, Jennifer P. Teixeira, M.R. Soares, et al.. (2017). Substrate and Mg doping effects in GaAs nanowires. Beilstein Journal of Nanotechnology. 8. 2126–2138. 4 indexed citations
11.
Rodrigues, J., J. F. C. Carreira, N. Ben Sédrine, et al.. (2016). Correction to “Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires”. The Journal of Physical Chemistry C. 120(12). 6907–6908. 6 indexed citations
12.
Rodrigues, J., Nuno F. Santos, N. Ben Sédrine, et al.. (2016). Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers. Journal of Applied Physics. 120(8). 11 indexed citations
13.
Martins, A. F., J. F. C. Carreira, J. Rodrigues, et al.. (2016). Spectroscopic analysis of LYSO:Ce crystals. Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy. 172. 163–167. 19 indexed citations
14.
Sédrine, N. Ben, J. Rodrigues, A. Redondo‐Cubero, et al.. (2015). Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. Scientific Reports. 5(1). 9703–9703. 18 indexed citations
15.
Rodrigues, J., N. Ben Sédrine, M. Felizardo, et al.. (2014). GaN:Pr3+ nanostructures for red solid state light emission. RSC Advances. 4(108). 62869–62877. 5 indexed citations
16.
Sédrine, N. Ben, Agnė Žukauskaitė, Jens Birch, Lars Hultman, & Vanya Darakchieva. (2013). Bandgap Engineering and Optical Constants of Y. Japanese Journal of Applied Physics. 52(8). 1 indexed citations
17.
Schöche, S., Tino Hofmann, Vanya Darakchieva, et al.. (2013). Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN. Journal of Applied Physics. 113(1). 21 indexed citations
18.
Bouzid, S., et al.. (2008). Optical properties of GaInNAsSb/GaAs/GaAs1−xNx (x≈10%) saturable absorber quantum wells. Applied Surface Science. 254(22). 7122–7126. 1 indexed citations
19.
Sédrine, N. Ben, Tijani Gharbi, Jean‐Christophe Harmand, & R. Chtourou. (2008). Optical constants and critical‐point parameters of GaAs1–xSbx alloy films grown on GaAs. physica status solidi (a). 205(4). 833–836. 2 indexed citations
20.
Sédrine, N. Ben, Afrah Bardaoui, Jean‐Christophe Harmand, & R. Chtourou. (2007). Optical Constants of As-grown and RTA GaAs1-xNx Layers Analysed by Spectroscopic Ellipsometry. 1–4. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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